onsemi-MPSW56
| Part # | onsemi-MPSW56 |
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MPSW56
TO-226
C
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage
80
80
V
V
Collector-Base Voltage
Emitter-Base Voltage
4.0
V
Collector Current – Continuous
Operating and Storage Junction Temperature Range
1.0
A
-55 to +150
°
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSW56
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
1.0
8.0
50
W
mW/
°
C
°
C/W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Ambient
125
°
C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
MPSW56, Rev
A
2000 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(B R )C E O
C
o
llector-Em itter
B reakdown
I
C
=
1
.0 m
A ,
I
B
= 0
80
V
V
o
ltage
V
(B R )C B O
V
(B R )E B O
I
C B O
C
o
llector-Base
B reakdown
V oltage
80
V
I
C
=
1
00
µ
A ,
I
E
= 0
I
E
=
1
.0 m
A ,
I
C
= 0
V
C B
=
6
0 V
, I
E
= 0
V
C E
=
6
0 V
E m itter-B ase
B reakdown
V oltage
C
o
llector-Cutoff
C urrent
C
o
llector-Cutoff
C urrent
E m itter-C utoff
C urrent
4.0
V
0.1
0.5
µ
A
µ
A
µ
A
I
C E O
I
E B O
V
E B
=
3
.0 V
, I
C
= 0
0.10
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
100
50
Collector-Emitter Saturation Voltage
I
C
= 250 mA, I
B
= 10 mA
0.5
1.2
V
V
V
CE(
sat
)
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 250 mA, V
CE
= 5.0 V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
I
C
= 250 mA, V
CE
= 5.0 V,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
50
MHz
pF
Collector-Base Capacitance
15
C
ob
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
1.0%
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
2
1
200
= 10
β
V
CE
= 1.0 V
125 °C
150
100
50
25
°
C
– 40
º
C
0.1
25 °C
125
º
C
– 40 °C
0.01
0
10
100
I
C
– COLLECTOR CURRENT
(mA)
1000
0.01
0.02
0.05
0.1
0.5
1
I
C
– COLLECTOR CURRENT
(mA)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
= 10
β
1
0.8
0.6
0.4
– 40
º
C
– 40
º
C
25
°
C
25
°
C
125
º
C
125
º
C
V
CE
= 5V
1
10
100
1000
1
10
100
1000
I
C
– COLLECTOR CURRENT
(mA)
I
C
– COLLECTOR CURRENT
(mA)
Collector-Base Capacitance
vs Collector-Base Voltage
Collector-Cutoff Current
vs. Ambient Temperature
40
30
20
10
0
100
10
f = 1.0 MHz
V
CB
= 60V
1
0.1
0.01
25
50
75
100
125
0
4
8
12
16
20
24
28
º
T
A
– AMBIENT TEMPER
A
T
URE (
C)
V
– COLLECTOR-BASE VOLTAGE (V)
CB
Gain Bandwidth Product
vs Collector Current
Safe Operating Area TO-226
10
250
200
150
100
50
V
CE
= 10V
1
0.1
*PULSED
OPER
A
T
ION
T
= 25
°
C
A
LIMIT DETERMINED
BY BV
CEO
0
0.01
1
10
100
1000
1
10
100
I
C
– COLLECTOR CURRENT
(mA)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
TO-226
SOT-223
0.25
0
0
25
50
75
100
125
150
TEMPER
A
T
URE (
o
C)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E
2
CMOS
TM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST
®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
