onsemi-MSD42WT1G
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MSD42WT1G,
NSVMSD42WT1G
NPN High Voltage
T
r
ansistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
COLLECTOR
3
•
These Devices are Pb
−
Free, Halogen Free and are RoHS Compliant
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and P
P
A
P Capable
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Collector-Base Voltage
Symbol
Value
300
300
6.0
Unit
V
1
2
V
(BR)CBO
(BR)CEO
(BR)EBO
BASE
EMITTER
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
V
3
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Rating
I
C
150
mA
1
2
Symbol
Max
450
274
Unit
mW
SC
−
70 (SOT
−
323)
CASE 419
P
D
STYLE 3
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JA
°
C/W
MARKING DIAGRAM
Junction and Storage
T
e
mperature Range
T , T
−
55 to
+
1
50
°
C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommende
d
O
perating Conditions may affect device reliability.
1D M
G
G
1
ELECTRICAL CHARACTERISTICS
SC
−
70
Characteristic
Symbol
Min
Max
Unit
1D
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
Collector-Emitter Breakdown Voltage
V
300
−
V
(BR)CEO
(BR)CBO
(BR)EBO
(I =
1.0 mA, I
= 0)
C
B
(Note: Microdot may be in either location)
Collector-Base Breakdown Voltage
(I =
100
m
A, I
= 0)
V
V
300
6.0
−
−
V
V
C
E
Emitter-Base Breakdown Voltage
(I =
100
m
A, I
= 0)
−
ORDERING INFORMATION
E
E
†
Device
Package
Shipping
Collector-Base Cutoff Current
(V =
200
V
, I
=
0
)
I
I
0.1
0.1
m
A
m
A
−
CBO
EBO
MSD42WT1G
SC
−
70
(Pb
−
Free)
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
CB
E
Emitter
−
Base Cutoff Current
(V =
6.0
V
, I
= 0)
−
NSVMSD42WT1G SC
−
70
(Pb
−
Free)
EB
B
(V =
10
V
, I
= 1.0 mA)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
h
FE1
h
FE2
25
40
−
−
CE
C
(V =
10
V
, I
= 30 mA)
CE
C
Collector-Emitter Saturation Voltage
V
−
0.5
V
CE(sat)
C
B
2
1. FR-4
@ 10 mm
, 1 oz. Copper traces.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, D.C.
≤
2%.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013
−
Rev. 11
MSD42WT1/D
MSD42WT1G, NSVMSD42WT1G
TYPICAL CHARACTERISTICS
1000
100
10
1.2
V
CE
= 10 V
I /I
= 10
C
B
1.0
0.8
0.6
150
°
C
T =
150
°
C
J
25
°
C
25
°
C
0.4
0.2
0.0
−
55
°
C
−
55
°
C
0.1
1
10
100
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Collector
−
Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−
55
°
C
25
°
C
−
55
°
C
25
°
C
150
°
C
150
°
C
0.1
0
0.1
0
I /I
= 10
V
CE
= 10 V
C
B
0.1
1
10
100
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Base
−
Emitter Saturation Voltage vs.
Figure 4. Base
−
Emitter On Voltage vs.
Collector Current
Collector Current
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
100
10
V
CE
= 10 V
T =
25
°
C
f = 1 MHz
C
J
ibo
C
obo
q
, for V
VB BE
1
−
55
°
C to 150
°
C
−
2.4
−
2.8
0.1
0.1
1
10
100
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 5. Base
−
Emitter Temperature
Figure 6. Capacitance
Coefficient
2
MSD42WT1G, NSVMSD42WT1G
TYPICAL CHARACTERISTICS
100
1000
V
= 20 V
1 s
100 ms
10 ms
CE
1 ms
T =
25
°
C
J
100
10
1
Single Pulse
T
e
st at T
= 25
°
C
A
10
0.1
1
10
100
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
V ,
COLLECTOR
−
EMITTER VOLTAGE (V)
CE
Figure 7. Current
−
Gain — Bandwidth Product
Figure 8. Safe Operating Area
1000
10000
t
s
t
r
V
CE(off)
= 100 V
I /I
= 5.0
C
B
I
= I
B1
B2
V
= 100 V
T =
25
°
C
CE(off)
J
I /I
= 5.0
t
f
C
B
= I
100
10
1000
100
t @
V
= 2 V
d
BE(off)
I
B1
B2
T =
25
°
C
J
1
10
100
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Turn
−
On Time
Figure 10. Turn
−
Off Time
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1.
ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1.
EMITTER
PIN 1.
ANODE
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
323)
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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:
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−
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−
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o
ll Free USA/Canada
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