onsemi-MUN5114DW1T1G
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MUN5114DW1,
NSBA114YDXV6,
NSBA114YDP6
Dual PNP Bias Resistor
Transistors
R1 = 10 k
W
, R2 = 47 k
W
PIN CONNECTIONS
(2)
PNP Transistors with Monolithic Bias
Resistor Network
(3)
(1)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base
−
emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
Features
•
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
MARKING DIAGRAMS
•
Simplifies Circuit Design
6
•
Reduces Board Space
SOT
−
363
CASE 419B
0D M
G
•
Reduces Component Count
G
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
1
1
Compliant
MAXIMUM RATINGS
SOT
−
563
CASE 463A
(T =
25
°
C, common for Q1 and Q2, unless otherwise noted)
0D M
G
A
Rating
Collector
−
Base Voltage
Collector
−
Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
V
CBO
CEO
V
50
Vdc
SOT
−
963
CASE 527AD
M
Q
I
C
100
40
mAdc
Vdc
V
IN(fwd)
1
Input Reverse Voltage
V
6
Vdc
IN(rev)
0D/Q
M
G
=
=
=
Specific Device Code
Date Code*
Pb
−
Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
ORDERING INFORMATION
*Date Code orientation may vary depending up-
on manufacturing location.
†
Device
Package
Shipping
MUN5114DW1T1G,
SMUN5114DW1T1G
SOT
−
363
3,000 /
T
a
pe & Reel
NSBA114YDXV6T1G
NSBA114YDP6T5G
SOT
−
563
SOT
−
963
4,000 /
T
a
pe & Reel
8,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2017
−
Rev. 1
DTA114YD/D
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MUN5114DW1 (SOT
−
363) One Junction Heated
T
o
tal Device Dissipation
P
D
T
= 25
°
C
187
256
1.5
2.0
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
670
490
°
C/W
q
JA
T
o
tal Device Dissipation
P
D
T
= 25
°
C
250
385
2.0
3.0
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
493
325
°
C/W
°
C/W
°
C
q
JA
Thermal Resistance,
R
188
208
q
JL
Junction and Storage
T
e
mperature Range
NSBA114YDXV6 (SOT
−
563) One Junction Heated
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T
= 25
°
C
357
2.9
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
q
JA
D
350
T
o
tal Device Dissipation
P
T
= 25
°
C
500
4.0
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
q
JA
250
Junction and Storage
T
e
mperature Range
NSBA114YDP6 (SOT
−
963) One Junction Heated
T
o
tal Device Dissipation
T , T
−
55 to +150
°
C
J
stg
P
D
T
= 25
°
C
231
269
1.9
2.2
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
540
464
°
C/W
q
JA
T
o
tal Device Dissipation
P
D
T
= 25
°
C
339
408
2.7
3.3
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
369
306
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to +150
stg
1. FR
−
4 @ Minimum Pad.
2. FR
−
4 @ 1.0 x 1.0 Inch Pad.
3. Both
junction heated values assume total power is sum of two equally powered channels.
2
2
4. FR
−
4 @ 100 mm
, 1 oz. copper traces, still air.
5. FR
−
4 @ 500 mm
, 1 oz. copper traces, still air.
2
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, common for Q
and Q
, unless otherwise noted)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V =
50
V
, I
=
0
)
−
−
−
−
−
−
−
100
500
0.2
−
CB
E
Collector
−
Emitter Cutoff Current
(V =
50
V
, I
=
0
)
CEO
CE
B
Emitter
−
Base Cutoff Current
(V =
6.0
V
, I
=
0
)
I
EBO
−
EB
C
Collector
−
Base Breakdown Voltage
(I =
10
m
A, I
= 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
(I =
2.0 mA, I
= 0)
Vdc
−
C
B
ON CHARACTERISTICS
h
FE
(I =
5.0 mA, V
= 10 V)
80
−
140
−
−
0.25
−
C
CE
(I =
10 mA, I
= 0.3 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
k
W
CE(sat)
C
B
Input Voltage (off)
(V =
5.0
V
, I
=
1
00
m
A)
V
V
i(off)
−
0.7
0.9
−
CE
C
Input Voltage (on)
(V =
0.2
V
, I
=
1
.0 mA)
i(on)
−
−
CE
C
Output Voltage (on)
(V =
5.0
V
, V
=
2
.5
V
, R
=
1
.0 k
W
)
V
OL
−
0.2
CC
B
L
Output Voltage (off)
V
OH
(V =
5.0
V
, V
=
0
.5
V
, R
=
1
.0 k
W
)
4.9
7.0
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
10
13
0.17
0.21
0.25
1
2
6. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
400
350
300
250
(1) SOT
−
363; 1.0 x 1.0 inch Pad
(2) SOT
−
563; Minimum Pad
2
(3) SOT
−
963; 100 mm
, 1 oz. copper trace
200
(1) (2)
(3)
150
100
50
0
−
50
−
25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (
°
C)
Figure 1. Derating Curve
3
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
TYPICAL CHARACTERISTICS
MUN5114DW1, NSBA114YDXV6
1
1000
I /I
= 10
C
B
V
CE
= 10 V
150
°
C
−
55
°
C
25
°
C
25
°
C
100
150
°
C
0.1
10
1
−
55
°
C
0.01
0
10
20
30
40
50
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
10
9
8
7
6
5
4
3
2
1
0
100
10
f = 10 kHz
−
55
°
C
I
E
= 0 A
T
A
= 25
°
C
1
25
°
C
0.1
150
°
C
0.01
V
O
= 5 V
6
0.001
0
10
20
30
40
50
0
1
2
3
4
5
7
V ,
REVERSE VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
10
25
°
C
−
55
°
C
1
150
°
C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
4
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
TYPICAL CHARACTERISTICS
NSBA114YDP6
1
1000
I /I
= 10
C
B
V
CE
= 10 V
150
°
C
−
55
°
C
25
°
C
25
°
C
100
150
°
C
0.1
10
1
−
55
°
C
0.01
0
10
20
30
40
50
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
7
6
5
4
3
2
1
0
100
10
f = 10 kHz
I
E
= 0 A
−
55
°
C
T
A
= 25
°
C
1
25
°
C
0.1
0.01
150
°
C
V
= 5 V
O
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
12 11 10 11
V ,
REVERSE VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25
°
C
−
55
°
C
1
150
°
C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
5
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
2X
aaa H D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa C
2X
2X 3 TIPS
bbb H D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
L2
0.15 BSC
0.15
0.30
0.10
0.10
0.006 BSC
0.006
0.012
0.004
aaa
bbb
ccc
ddd
6X
ccc C
0.004
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
6
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
ISSUE G
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
−
X
−
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN
NOM MAX
INCHES
NOM MAX
E
−
Y
−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b
5
6 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
7
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6
PACKAGE DIMENSIONS
SOT
−
963
CASE 527AD
ISSUE E
NOTES:
D
X
Y
1. DIMENSIONING
AND TOLERANCING PER ASME
A
Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
6
5
4
3
H
E
E
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
H
E
0.95
0.05
1.05
0.15
L
L2
6X
b
6X
L2
0.08
X Y
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
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DTA114YD/D
