onsemi-MUN5233DW1T1G
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DATA SHEET
Dual NPN Bias Resistor
Transistors
PIN CONNECTIONS
(3)
(2)
(1)
R1 = 4.7 k
W
, R2 = 47 k
W
NPN Transistors with Monolithic Bias
Resistor Network
R
1
R
2
Q
1
Q
2
MUN5233DW1,
NSBC143ZDXV6,
NSBC143ZDP6
R
2
R
1
(4)
(5)
(6)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
MARKING DIAGRAMS
6
SOT
−
363
CASE 419B
7K M
G
G
1
Features
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
SOT
−
563
CASE 463A
7K M
G
1
•
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT
−
963
CASE 527AD
Y M
1
MAXIMUM RATINGS
A
7K/Y
M
G
=
=
=
Specific Device Code
Date Code*
Pb-Free Package
(T =
25
°
C, common for Q
and Q
, unless otherwise noted)
1
2
Rating
Symbol
Max
50
Unit
Vdc
(Note: Microdot may be in either location)
Collector-Base Voltage
Collector-Emitter Voltage
V
CBO
V
CEO
*Date Code orientation may vary depending upon
manufacturing location.
50
Vdc
Collector Current
−
Continuous
Input Forward Voltage
I
100
30
mAdc
Vdc
C
V
IN(fwd)
Input Reverse Voltage
V
IN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
MUN5233DW1T1G,
SMUN5233DW1T1G
SOT
−
363
3,000/
T
a
pe & Reel
NSVMUN5233DW1T3G
SOT
−
363
SOT
−
563
10,000/
T
a
pe & Reel
4,000/
T
a
pe & Reel
NSBC143ZDXV6T1G,
NSVBC143ZDXV6T1G
NSBC143ZDXV6T5G
NSBC143ZDP6T5G
SOT
−
563
SOT
−
963
8,000/
T
a
pe & Reel
8,000/
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2022
−
Rev. 4
DTC143ZD/D
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MUN5233DW1 (SOT
−
363) ONE JUNCTION HEATED
T
o
tal Device Dissipation
P
D
T =
25
°
C
187
256
1.5
2.0
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
670
490
°
C/W
q
JA
T
o
tal Device Dissipation
P
D
T =
25
°
C
250
385
2.0
3.0
mW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
°
C/W
°
C
q
JA
493
325
Thermal Resistance,
R
q
JL
188
208
Junction and Storage
T
e
mperature Range
NSBC143ZDXV6 (SOT
−
563) ONE JUNCTION HEATED
T
o
tal Device Dissipation
T , T
J
−
55 to +150
stg
P
D
T =
25
°
C
357
2.9
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
q
JA
D
350
T
o
tal Device Dissipation
P
T =
25
°
C
500
4.0
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
q
JA
250
Junction and Storage
T
e
mperature Range
NSBC143ZDP6 (SOT
−
963) ONE JUNCTION HEATED
T
o
tal Device Dissipation
T , T
−
55 to +150
°
C
J
stg
P
D
T =
25
°
C
231
269
1.9
2.2
MW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
q
JA
540
464
T
o
tal Device Dissipation
P
D
T =
25
°
C
339
408
2.7
3.3
MW
A
Derate above 25
°
C
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
°
C/W
°
C
q
JA
369
306
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to +150
stg
1. FR
−
4 @ Minimum Pad.
2. FR
−
4 @ 1.0
×
1.0 Inch Pad.
3. Both
junction heated values assume total power is sum of two equally powered channels.
2
2
4. FR
−
4 @ 100 mm
, 1 oz. copper traces, still air.
5. FR
−
4 @ 500 mm
, 1 oz. copper traces, still air.
2
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, common for Q
and Q
, unless otherwise noted)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V =
50
V
, I
=
0
)
−
−
−
−
−
−
−
100
500
0.18
−
CB
E
Collector-Emitter Cutoff Current
(V =
50
V
, I
=
0
)
CEO
CE
B
Emitter-Base Cutoff Current
(V =
6.0
V
, I
=
0
)
I
EBO
−
EB
C
Collector-Base Breakdown Voltage
(I =
10
m
A, I
= 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
(I =
2.0 mA, I
= 0)
Vdc
−
C
B
ON CHARACTERISTICS
h
FE
(I =
5.0 mA, V
= 10 V)
80
−
200
−
−
0.25
−
C
CE
(I =
10 mA, I
= 1.0 mA)
V
V
CE(sat)
C
B
Input Voltage (Off)
(V =
5.0
V
, I
=
1
00
m
A)
V
Vdc
Vdc
Vdc
Vdc
k
W
i(off)
i(on)
−
0.6
0.9
−
CE
C
Input Voltage (On)
(V =
0.2
V
, I
=
5
.0 mA)
V
−
−
CE
C
Output Voltage (On)
(V =
5.0
V
, V
=
2
.5
V
, R
=
1
.0 k
W
)
V
OL
−
0.2
CC
B
L
Output Voltage (Off)
V
OH
(V =
5.0
V
, V
=
0
.5
V
, R
=
1
.0 k
W
)
4.9
3.3
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
4.7
0.1
6.1
0.08
0.12
1
2
6. Pulsed
Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
400
350
300
250
(1) SOT
−
363; 1.0
×
1.0 Inch Pad
200
(2) SOT
−
563; Minimum Pad
(1) (2) (3)
2
(3) SOT
−
963; 100 mm
, 1 oz. Copper Trace
150
100
50
0
−
50
−
25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (
°
C)
Figure 1. Derating Curve
3
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
TYPICAL CHARACTERISTICS
MUN5233DW1, NSBC143ZDXV6
1
1000
V
CE
= 10 V
I /I
= 10
C
B
150
°
C
100
0.1
−
55
°
C
150
°
C
25
°
C
−
55
°
C
25
°
C
10
0.01
1
10
100
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
3.2
2.8
2.4
2
100
10
f = 10 kHz
= 0 A
T =
25
°
C
A
150
°
C
I
E
−
55
°
C
25
°
C
1
1.6
1.2
0.8
0.4
0
0.1
0.01
0.001
V
3
= 5 V
O
0
10
20
30
40
50
0
1
2
4
V ,
REVERSE BIAS VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
−
55
°
C
1
150
°
C
25
°
C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
4
MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6
TYPICAL CHARACTERISTICS
NSBC143ZDP6
1
1000
I /I
= 10
V
CE
= 10 V
C
B
150
°
C
−
55
°
C
100
25
°
C
150
°
C
0.1
10
−
55
°
C
25
°
C
1
0.1
0.01
1
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
2.4
2
100
10
f = 10 kHz
= 0 A
T =
25
°
C
A
150
°
C
−
55
°
C
I
E
1.6
1.2
0.8
0.4
0
1
0.1
25
°
C
0.01
0.001
V
O
= 5 V
0
10
20
30
40
50
0
1
2
3
4
V ,
REVERSE BIAS VOLTAGE (V)
R
V ,
INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25
°
C
−
55
°
C
1
150
°
C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SOT
−
563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX M
G
1
XX =
Specific Device Code
M
= Month Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
963
CASE 527AD
−
01
ISSUE E
DATE 09
FEB 2010
SCALE 4:1
NOTES:
D
X
Y
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
6
5
4
3
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
H
E
0.95
0.05
1.05
0.15
L
L2
GENERIC
MARKING DIAGRAM*
6X
b
6X
L2
0.08
X Y
XM
1
BOTTOM VIEW
STYLE 1:
PIN 1.
EMITTER 1
2. BASE
1
STYLE 2:
STYLE 3:
PIN 1.
CATHODE 1
2. CATHODE
1
X
M
= Specific Device Code
= Month Code
PIN 1.
EMITTER 1
2. EMITTER2
3. BASE
2
3. COLLECTOR
2
4. EMITTER
2
5. BASE
2
3. ANODE/ANODE
2
4. CATHODE
2
5. CATHODE
2
6. ANODE/ANODE
1
4. COLLECTOR
2
5. BASE
1
6. COLLECTOR
1
*This information is generic. Please refer
to device data sheet for actual part
marking.
6. COLLECTOR
1
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
Pb
−
Free indicator, “G” or microdot “
G
”,
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
may or may not be present.
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
RECOMMENDED
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. ANODE
5. CATHODE
6. CATHODE
MOUNTING FOOTPRINT
6X
0.35
6X
0.20
STYLE 7:
PIN 1.
CATHODE
2. ANODE
STYLE 8:
STYLE 9:
PIN 1.
SOURCE 1
2. GATE
1
PIN 1.
DRAIN
2. DRAIN
3. GATE
3. CATHODE
4. CATHODE
5. ANODE
3. DRAIN
2
4. SOURCE
2
5. GATE
2
PACKAGE
OUTLINE
4. SOURCE
5. DRAIN
6. DRAIN
1.20
6. CATHODE
6. DRAIN
1
STYLE 10:
PIN 1.
CATHODE 1
2. N/C
0.35
PITCH
3. CATHODE
2
4. ANODE
2
5. N/C
DIMENSIONS: MILLIMETERS
6. ANODE
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26456D
SOT
−
963, 1X1, 0.35P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
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Marking.pdf
.
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