onsemi-MUN5335DW1T1
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MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
T
r
ansistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board
space is at a premium.
(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
•
Simplifies Circuit Design
•
Reduces Board Space
6
5
4
•
Reduces Component Count
•
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
1
2
3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted, common for Q
A
1
SOT–363
CASE 419B
STYLE 1
and Q
, – minus sign for Q
(PNP) omitted)
2
1
Rating
Collector-Base Voltage
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
Collector-Emitter Voltage
Collector Current
V
50
Vdc
MARKING DIAGRAM
I
C
100
mAdc
THERMAL CHARACTERISTICS
xx
Characteristic
(One Junction Heated)
Symbol
Max
Unit
T
o
tal Device Dissipation
P
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
D
T =
25
°
C
A
Derate above 25
°
C
mW/
°
C
°
C/W
xx =
Device Marking
=
(See Page 2)
Thermal Resistance –
Junction-to-Ambient
R
670 (Note 1.)
490 (Note 2.)
θ
JA
Characteristic
DEVICE MARKING INFORMATION
(Both Junctions Heated)
Symbol
Max
Unit
See specific marking information in the device marking table
on page 2 of this data sheet.
T
o
tal Device Dissipation
P
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
D
T =
25
°
C
A
Derate above 25
°
C
mW/
°
C
°
C/W
°
C/W
°
C
Preferred
devices are recommended choices for future use
and best overall value.
Thermal Resistance –
Junction-to-Ambient
R
493 (Note 1.)
325 (Note 2.)
θ
JA
JL
Thermal Resistance –
Junction-to-Lead
R
188 (Note 1.)
208 (Note 2.)
θ
Junction and Storage
T
e
mperature
T , T
–55 to +150
J
stg
1. FR–4
@ Minimum Pad
2. FR–4
@ 1.0 x 1.0 inch Pad
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
January, 2001 – Rev. 6
MUN5311DW1T1/D
MUN5311DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
11
R1 (K)
10
R2 (K)
10
Shipping
MUN5311DW1T1
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
3000/
T
a
pe & Reel
MUN5312DW1T1
12
22
22
MUN5313DW1T1
13
47
47
MUN5314DW1T1
14
10
47
MUN5315DW1T1 (Note 3.)
MUN5316DW1T1 (Note 3.)
MUN5330DW1T1 (Note 3.)
MUN5331DW1T1 (Note 3.)
MUN5332DW1T1 (Note 3.)
MUN5333DW1T1 (Note 3.)
MUN5334DW1T1 (Note 3.)
MUN5335DW1T1 (Note 3.)
15
10
∞
16
4.7
1.0
2.2
4.7
4.7
22
∞
30
1.0
2.2
4.7
47
31
32
33
34
47
35
2.2
47
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted, common for Q
and Q
, – minus sign for Q
(PNP) omitted)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50
V
, I
=
0
)
I
I
–
–
–
–
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50
V
, I
=
0
)
CE
B
CEO
Emitter-Base Cutoff Current
(V =
6.0
V
, I
=
0
)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
EB
C
Collector-Base Breakdown Voltage (I
= 10
µ
A, I
= 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4.) (I
= 2.0 mA, I
= 0)
C
B
(BR)CEO
3. New
resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse
T
e
st: Pulse Width < 300
µ
s, Duty Cycle <
2.0%
2
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted, common for Q
and Q
, – minus sign for Q
(PNP) omitted) (Continued)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.)
DC Current Gain
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
h
FE
35
60
80
60
–
–
–
–
–
–
–
–
–
–
–
–
(V =
10
V
, I
=
5
.0 mA)
100
140
140
350
350
5.0
15
CE
C
80
160
160
3.0
8.0
15
80
80
80
30
200
150
140
Collector-Emitter Saturation Voltage
(I =
10 mA, I
= 0.3 mA)
V
–
–
0.25
Vdc
Vdc
CE(sat)
C
B
(I =
10 mA, I
= 5 mA)
MUN5330DW1T1/MUN5331DW1T1
C
B
(I =
10 mA, I
= 1 mA)
MUN5315DW1T1/MUN5316DW1T1
C
B
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(V =
5.0
V
, V
=
2
.5
V
, R
=
1
.0 k
Ω
)
V
OL
MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V =
5.0
V
, V
=
3
.5
V
, R
=
1
.0 k
Ω
)
CC
B
L
Output Voltage (off)
(V =
5.0
V
, V
=
0
.5
V
, R
=
1
.0 k
Ω
)
V
OH
4.9
–
–
Vdc
CC
B
L
(V =
5.0
V
, V
=
0
.050
V
, R
=
1
.0 k
Ω
) MUN5330DW1T1
CC
B
L
(V =
5.0
V
, V
=
0
.25
V
, R
=
1
.0 k
Ω
)
MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
CC
B
L
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k
Ω
15.4
1.54
28.6
2.86
2.2
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
R1/R2
0.8
0.17
–
1.0
0.21
–
1.0
0.1
1.2
0.25
–
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
0.8
1.2
0.055
0.38
0.038
0.185
0.56
0.056
0.47
0.047
5. Pulse
T
e
st: Pulse Width < 300
µ
s, Duty Cycle <
2.0%
3
MUN5311DW1T1 Series
300
250
200
150
100
R
= 490
°
C/W
50
0
θ
JA
–50
0
50
100
150
T ,
AMBIENT TEMPERATURE (
°
C)
A
Figure 1. Derating Curve
4
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR
1
1000
I /I
= 10
C B
V
CE
= 10 V
T Ă=Ă-25
°
C
A
25
°
C
T Ă=Ă75
°
C
A
25
°
C
0.1
-25
°
C
75
°
C
100
0.01
0.001
10
0
20
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
3
100
10
25
°
C
75
°
C
f = 1 MHz
I =
0 V
E
T Ă=Ă-25
°
C
A
T =
25
°
C
A
1
0.1
2
1
0.01
0.001
V =
5 V
O
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V =
0.2 V
O
T Ă=Ă-25
°
C
A
25
°
C
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
5
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C B
T Ă=Ă75
°
C
A
T Ă=Ă-25
°
C
A
25
°
C
-25
°
C
ā0.1
100
25
°
C
75
°
C
ā0.01
10
ā20
I ,
COLLECTOR CURRENT (mA)
1
10
100
0
ā40
50
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
3
100
10
1
25
°
C
75
°
C
f = 1 MHz
l =
0 V
E
T Ă=Ă-25
°
C
A
T =
25
°
C
A
2
1
ā0.1
ā0.01
V =
5 V
O
0
0
ā0.001
10
20
30
40
50
0
1
ā2
3
ā4
ā5
ā6
ā7
ā8
ā9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
V =
0.2 V
O
T Ă=Ă-25
°
C
A
10
25
°
C
75
°
C
1
ā0.1
0
10
ā20
ā30
ā40
ā50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
6
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 NPN TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C B
T Ă=Ă75
°
C
A
25
°
C
25
°
C
T Ă=Ă-25
°
C
A
0.1
-25
°
C
75
°
C
100
0.01
10
0.001
1
10
100
0
20
40
50
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 12. V
CE(sat)
versus I
C
Figure 13. DC Current Gain
4
3
2
1
100
10
1
75
°
C
25
°
C
f = 1 MHz
I =
0 V
T Ă=Ă-25
°
C
A
E
T =
25
°
C
A
0.1
0.01
V =
5 V
O
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V =
0.2 V
O
T Ă=Ă-25
°
C
A
10
1
25
°
C
75
°
C
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output
Current
7
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 PNP TRANSISTOR
1000
10
V
CE
= 10 V
I /I
= 10
C B
T Ă=Ă75
°
C
A
1
25
°
C
75
°
C
25
°
C
T Ă=Ă-25
°
C
A
-25
°
C
100
ā0.1
10
0.01
1
10
I ,
COLLECTOR CURRENT (mA)
0
ā20
I ,
COLLECTOR CURRENT (mA)
ā40
ā50
100
C
C
Figure 17. V
CE(sat)
versus I
C
Figure 18. DC Current Gain
4
3
2
100
25
°
C
75
°
C
f = 1 MHz
l =
0 V
T Ă=Ă-25
°
C
A
E
10
1
T =
25
°
C
A
ā0.1
1
0
ā0.01
V =
5 V
O
ā0.001
0
1
ā2
ā3
ā4
ā5
ā6
ā7
ā8
ā9
10
0
10
20
30
40
50
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
V =
0.2 V
O
T Ă=Ă-25
°
C
A
10
25
°
C
75
°
C
1
ā0.1
0
10
ā20
ā30
ā40
ā50
I ,
COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
8
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I
= 10
C B
T Ă=Ă75
°
C
A
25
°
C
-25
°
C
25
°
C
75
°
C
100
T Ă=Ă-25
°
C
A
0.1
0.01
10
0
20
I ,
COLLECTOR CURRENT (mA)
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 22. V
CE(sat)
versus I
C
Figure 23. DC Current Gain
1
100
10
1
25
°
C
f = 1 MHz
I =
0 V
75
°
C
E
T Ă=Ă-25
°
C
A
0.8
T =
25
°
C
A
0.6
0.4
0.1
0.01
0.2
V =
5 V
O
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V =
0.2 V
O
T Ă=Ă-25
°
C
A
25
°
C
75
°
C
10
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
9
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR
1
1000
I /I
= 10
C B
T Ă=Ă75
°
C
A
T Ă=Ă-25
°
C
A
25
°
C
25
°
C
75
°
C
-25
°
C
100
ā0.1
ā0.01
10
0
10
20
30
40
1
10
I ,
COLLECTOR CURRENT (mA)
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 27. V
CE(sat)
versus I
C
Figure 28. DC Current Gain
1
100
25
°
C
-25
°
C
T Ă=Ă75
°
C
A
f = 1 MHz
l =
0 V
E
0.8
10
1
T =
25
°
C
A
0.6
0.4
ā0.1
ā0.01
0.2
0
V =
5 V
O
ā0.001
0
10
20
30
40
50
0
1
2
3
ā4
ā5
ā6
ā7
ā8
Ă9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
V =
0.2 V
O
T Ă=Ă-25
°
C
A
25
°
C
75
°
C
10
1
Ă0.1
0
10
ā20
ā30
ā40
ā50
I ,
COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
10
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSISTOR
1
300
T Ă=Ă75
°
C
A
V
CE
= 10
I /I
= 10
C B
T Ă=Ă-25
°
C
250
200
150
100
A
25
°
C
25
°
C
75
°
C
0.1
-25
°
C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15
20 40 50 60 70 80 90 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 32. V
CE(sat)
versus I
C
Figure 33. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l =
0 V
T Ă=Ă75
°
C
25
°
C
A
E
T =
25
°
C
A
-25
°
C
2.5
2
1.5
1
V =
5 V
O
0.5
0
0
2
4
6
8
10 15 20
25 30
35 40 45 50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
V =
0.2 V
O
T Ă=Ă-25
°
C
A
25
°
C
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
11
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR
1
180
T Ă=Ă75
°
C
A
I /I
= 10
C B
V
CE
= 10 V
160
140
120
100
80
T Ă=Ă-25
°
C
A
25
°
C
-25
°
C
25
°
C
0.1
75
°
C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15
20 40 50 60 70 80 90
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 37. V
CE(sat)
versus I
C
Figure 38. DC Current Gain
4.5
4
100
10
1
T Ă=Ă75
°
C
f = 1 MHz
l =
0 V
A
25
°
C
E
3.5
3
T =
25
°
C
A
-25
°
C
2.5
2
1.5
1
V =
5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
V =
0.2 V
O
25
°
C
T Ă=Ă-25
°
C
A
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
12
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5315DW1T1
1000
1000
T =
25
°
C
A
T =
25
°
C
A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 5.0 V
V
CE
= 5.0 V
100
100
1.0
10
100
1.0
10
I ,
COLLECTOR CURRENT (mA)
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 42. DC Current Gain – PNP
Figure 43. DC Current Gain – NPN
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5316DW1T1
1000
1000
T =
25
°
C
A
T =
25
°
C
A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 5.0 V
V
CE
= 5.0 V
100
100
1.0
10
I ,
COLLECTOR CURRENT (mA)
100
1.0
10
I ,
COLLECTOR CURRENT (mA)
100
C
C
Figure 44. DC Current Gain – PNP
Figure 45. DC Current Gain – NPN
13
MUN5311DW1T1 Series
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
0.5 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of
one can calculate the power dissipation of the device which
in this case is 256 milliwatts.
the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
150
°
C – 25
°
C
P
D
=
= 256 milliwatts
490
°
C/W
determined by T
, the maximum rated junction
J(max)
The 490
°
C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 256
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
temperature of the die, R
, the thermal resistance from
the device junction to ambient; and the operating
θ
JA
temperature, T . Using the values provided on the data
A
sheet, P
can be calculated as follows:
D
T
J(max)
– T
A
R
θ
P
D
=
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
of 25
°
C,
A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10
°
C.
•
The soldering temperature and time should not exceed
260
°
C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient should be 5
°
C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied
during cooling.
* Soldering
a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
14
MUN5311DW1T1 Series
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 46 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189
°
C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
SPIKE”
STEP 6
STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
RAMP”
STEP 2
VENT
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
SOAK”
SOAK” ZONES
2 & 5
RAMP”
205
°
TO 219
°
C
PEAK AT
SOLDER JOINT
200
°
C
150
°
C
170
°
C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160
°
C
150
°
C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140
°
C
100
°
C
MASS OF ASSEMBLY)
100
°
C
50
°
C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 46. Typical Solder Heating Profile
15
MUN5311DW1T1 Series
PACKAGE DIMENSIONS
SOT–363
CASE 419B–01
ISSUE G
A
G
V
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
6
1
5
4
3
S
–B–
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
0.2 (0.008)
D
6 PL
—
0.004
0.004
0.004
0.010
0.012
—
0.10
0.10
0.10
0.25
0.30
K
N
S
V
N
0.008 REF
0.20 REF
0.079
0.012
0.087
0.016
2.00
0.30
2.20
0.40
J
STYLE 1:
C
PIN 1.
EMITTER 2
2. BASE
2
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
K
6. COLLECTOR
2
H
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor
and
are trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes
without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts.
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
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MUN5311DW1T1/D
