onsemi-MVMBF0201NLT1G
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MMBF0201NL,
MVMBF0201NL
MOSFET
– N-Channel,
SOT-23
300 mA, 20 V
300 mAMPS
−
20 VOLTS
R
DS(on)
= 1
W
These miniature surface mount MOSFETs low R
assure
DS(on)
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc
−
d
c converters, power management in portable and
battery
−
powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
N
−
Channel
3
Features
•
Low R
Provides Higher Efficiency and Extends Battery Life
•
Miniature SOT
−
23 Surface Mount Package Saves Board Space
DS(on)
1
•
MVMBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable*
2
•
These Devices are Pb
−
Free and are RoHS Compliant
MARKING DIAGRAM
AND PIN ASSIGNMENT
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
3
3
Rating
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
−
Continuous
Drain Current
Symbol
Value
20
Unit
Vdc
Drain
V
DSS
1
N1 M
G
V
GS
20
Vdc
2
G
mAdc
SOT
−
23
CASE 318
STYLE 21
−
Continuous @ T
= 25
°
C
I
300
240
750
A
D
D
1
2
−
Continuous @ T
= 70
°
C
I
A
Gate
Source
−
Pulsed Drain Current (t
≤
10
m
s)
I
p
DM
T
o
tal Power Dissipation @ T
= 25
°
C
P
225
−
55 to 150
556
mW
°
C
A
D
N1
M
G
= Specific Device Code
= Date Code*
= Pb
−
Free Package
Operating and Storage
T
e
mperature Range
T , T
J
stg
Thermal Resistance, Junction
−
to
−
Ambient
R
°
C/W
°
C
q
JA
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
260
L
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
MMBF0201N
L
T
1G
Package
Shipping
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe &
Reel
MVMBF0201N
L
T
1G* SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1995
1
Publication Order Number:
May, 2019
−
Rev. 6
MMBF0201N
L
T
1/D
MMBF0201NL, MVMBF0201NL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
20
−
−
Vdc
(BR)DSS
(V =
0 Vdc, I
= 10
m
A)
GS
D
Zero Gate Voltage Drain Current
(V =
16 Vdc, V
= 0 Vdc)
I
m
Adc
DSS
−
−
−
−
1.0
10
DS
GS
(V =
16 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate
−
Body Leakage Current (V
=
20 Vdc, V
= 0)
I
−
−
100
nAdc
GS
DS
GSS
Gate Threshold Voltage
V
GS(th)
1.0
1.7
2.4
Vdc
(V =
V ,
I =
250
m
Adc)
DS
GS
D
Static Drain
−
to
−
Source On
−
Resistance
(V =
10 Vdc, I
= 300 mAdc)
r
W
DS(on)
−
−
0.75
1.0
1.0
1.4
GS
D
(V =
4.5 Vdc, I
= 100 mAdc)
GS
D
Forward Transconductance (V
= 10 Vdc, I
= 200 mAdc)
g
FS
−
450
−
mMhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V =
5.0 V)
DS
C
−
−
−
45
25
−
−
−
iss
Output Capacitance
Transfer Capacitance
Turn
−
On Delay Time
Rise Time
(V =
5.0 V)
C
oss
DS
(V =
5.0 V)
DG
C
5.0
rss
t
−
−
−
−
−
2.5
2.5
−
−
−
−
−
ns
d(on)
t
r
(V =
15 Vdc, I
= 300 mAdc,
DD
D
R =
50
W
)
L
Turn
−
Off Delay Time
Fall Time
t
15
d(off)
t
f
0.8
Gate Charge (See Figure 5)
Q
1400
pC
A
T
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
−
−
−
−
−
0.3
0.75
−
Pulsed Current
I
SM
V
SD
0.85
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2. Switching
characteristics are independent of operating junction temperature.
2
MMBF0201NL, MVMBF0201NL
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
V
= 5 V
GS
V
GS
= 4 V
V
GS
= 10, 9, 8, 7, 6 V
125
°
C
-ꢀ55
°
C
0.2
0
25
°
C
V
= 3 V
GS
0
0
1
2
3
4
5
6
0
0.3
V ,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
0.6
0.9
1.2
1.4
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Figure 1. Transfer Characteristics
Figure 2. On
−
Region Characteristics
1.5
1.2
0.9
0.6
0.3
0
2.4
2.0
1.5
1.0
0.5
V
= 4.5 V
GS
V
= 10 V
GS
0
0
0.2
0.4
0.6
0.8
1
0
5
10
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
15
20
I ,
DRAIN CURRENT (AMPS)
D
V
Figure 3. On
−
Resistance versus Drain Current
Figure 4. On
−
Resistance versus
Gate
−
to
−
Source Voltage
16
14
12
10
8
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
I =
250
m
A
D
V
= 16 V
I =
300 mA
DS
D
6
4
2
0
0
-25
0
25
50
75
100
125
150
160
450
2000
3400
Q ,
TOTAL GATE CHARGE (pC)
g
TEMPERATURE (
°
C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance
Over Temperature
3
MMBF0201NL, MVMBF0201NL
TYPICAL ELECTRICAL CHARACTERISTICS
1.8
1.6
1.4
1.2
1.0
0.8
100
V
= 10 V @ 300 mA
GS
80
60
40
20
0
V
GS
= 4.5 V @ 100 mA
C
iss
C
oss
C
rss
0.6
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. On
−
Resistance versus
Figure 8. Capacitance
Junction Temperature
10
1.0
0.1
125
°
C
25
°
C
-ꢀ55
°
C
0.01
0.001
0
0.3
0.6
0.9
1.2
1.4
SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source
−
to
−
Drain Forward Voltage
versus Continuous Current (I
S
)
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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