onsemi-NCV8402AMNWT1G
| Part # | onsemi-NCV8402AMNWT1G |
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Self-Protected Low Side
Driver with
T
e
mperature
and Current Limit
NCV8402, NCV8402A
NCV8402/A is a three terminal protected Low
−
Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain
−
to
−
Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
V
(BR)DSS
R
TYP
I
D
MAX
DS(ON)
(Clamped)
42 V
165 m
W
@ 10 V
2.0 A*
Features
*Max current limit value is dependent on input
condition.
•
Short
−
Circuit Protection
•
Thermal Shutdown with Automatic Restart
•
Overvoltage Protection
MARKING DIAGRAMS
DRAIN
•
Integrated Clamp for Inductive Switching
•
ESD Protection
4
4
SOT
−
223
CASE 318E
STYLE 3
AYW
xxxxx
G
G
•
NCV8402AMNWT1G
−
Wettable Flanks Product
•
dV/dt Robustness
1
2
3
1
1
2
3
•
Analog Drive Capability (Logic Level Input)
SOURCE
GATE
•
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC
−
Q101 Qualified and P
P
A
P Capable
DRAIN
1
xxxxx
AYWW
DFN6
CASE 506AX
•
These Devices are Pb
−
Free and are RoHS Compliant
G
Typical Applications
1
xxxxx
AYWW
G
•
Switch a
V
a
riety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
DFN6 (WF)
CASE 506DK
1
A
Y
= Assembly Location
=
Y
e
ar
Drain
W or WW = Work Week
xxxxx =
V8402 or 8402A
Overvoltage
Protection
G
= Pb
−
Free Package
Gate
Input
(Note: Microdot may be in either location)
ESD Protection
DFN6 PACKAGE PIN DESCRIPTION
G
1
NC NC
Pin #
Symbol
Description
T
e
mperature
Limit
Current
Limit
Current
Sense
2
3
1
2
3
4
5
6
7
G
NC
NC
S*
Gate Input
No Connect
No Connect
Source
7
EPAD
Source
6
S
5
4
S*
Source
S
S
S*
Source
EPAD
Drain
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2019
−
Rev. 26
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
42
Unit
V
Drain
−
to
−
Source Voltage Internally Clamped
Drain
−
to
−
Gate Voltage Internally Clamped
Gate
−
to
−
Source Voltage
V
DSS
DGR
(R =
1.0 M
W
)
G
V
42
V
V
GS
14
V
Continuous Drain Current
I
D
Internally Limited
T
o
tal Power Dissipation
−
SOT
−
223 Version
@ T
= 25
°
C (Note 1)
P
D
1.1
1.74
8.9
W
A
@ T
= 25
°
C (Note 2)
A
@ T
= 25
°
C)
S
T
o
tal Power Dissipation
−
DFN Version
@ T
= 25
°
C (Note 1)
P
0.76
1.78
8.9
W
A
A
D
@ T
= 25
°
C (Note 2)
A
@ T
= 25
°
C)
S
Maximum Continuous Drain Current
−
SOT
−
223 Version
Maximum Continuous Drain Current
−
DFN Version
@ T
= 25
°
C (Note 1)
I
D
1.54
1.94
6.75
A
@ T
= 25
°
C (Note 2)
A
@ T
= 25
°
C)
S
@ T
= 25
°
C (Note 1)
I
D
1.28
1.97
6.75
A
A
@ T
= 25
°
C (Note 2)
A
@ T
= 25
°
C)
S
Thermal Resistance
SOT223 Junction
−
to
−
Ambient Steady State (Note 1)
SOT223 Junction
−
to
−
Ambient Steady State (Note 2)
SOT223 Junction
−
to
−
Soldering Point Steady State
R
R
R
114
72
14
°
C/W
q
JA
JA
JS
q
q
DFN Junction
−
to
−
Ambient Steady State (Note 1)
DFN Junction
−
to
−
Ambient Steady State (Note 2)
DFN Junction
−
to
−
Soldering Point Steady State
163
70
14
R
R
R
q
q
q
JA
JA
JS
Single Pulse Drain
−
to
−
Source Avalanche Energy
(V =
32
V
, V
=
5
.0
V
, I
=
1
.0 A, L = 300 mH, R
= 25
W
)
G(ext)
E
AS
150
mJ
DD
G
PK
Load Dump Voltage
(V =
0 and 10
V
, R
=
2
.0
W
, R
= 9.0
W
, t
= 400 ms)
V
LD
55
V
GS
I
L
d
Operating Junction
T
e
mperature
Storage
T
e
mperature
T
−
40 to 150
−
55 to 150
°
C
°
C
J
T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06
″
thick).
2. Surface
−
mounted onto 2
″
sq. FR4 board (1
″
sq., 1 oz. Cu, 0.06
″
thick).
+
I
D
DRAIN
I
G
VDS
GATE
+
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
2
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
(Note 3)
V
= 0
V
, I
=
1
0 mA, T
= 25
°
C
V
(BR)DSS
42
40
46
45
55
55
V
GS
D
J
V
GS
= 0
V
, I
=
1
0 mA, T
= 150
°
C
D J
(Note 5)
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
V
= 0
V
, V
=
3
2
V
, T
=
2
5
°
C
I
I
0.25
1.1
4.0
20
m
A
m
A
GS
DS
J
DSS
V
GS
= 0
V
, V
=
3
2
V
, T
=
1
50
°
C
DS
(Note 5)
J
DSS
Gate Input Current
V
= 0
V
, V
=
5
.0 V
I
GSSF
50
100
2.2
m
A
DS
GS
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS
= V
, I
= 150
m
A
V
GS(th)
1.3
1.8
4.0
V
DS
D
Gate Threshold
T
e
mperature Coefficient
Static Drain
−
to
−
Source On
−
Resistance
V
/T
GS(th)
−
mV/
°
C
m
W
J
V
= 10
V
, I
=
1
.7 A, T
= 25
°
C
R
DS(on)
165
305
200
400
GS
D
J
V
GS
= 10
V
, I
=
1
.7 A, T
= 150
°
C
D
J
(Note 5)
V
= 5.0
V
, I
=
1
.7 A, T
= 25
°
C
D J
195
360
230
460
GS
V
GS
= 5.0
V
, I
=
1
.7 A, T
= 150
°
C
D
J
(Note 5)
V
= 5.0
V
, I
=
0
.5 A, T
= 25
°
C
D J
190
350
230
460
GS
V
GS
= 5.0
V
, I
=
0
.5 A, T
= 150
°
C
D
J
(Note 5)
Source
−
Drain Forward On Voltage
V
GS
= 0
V
, I
=
7
.0 A
V
SD
1.0
V
S
SWITCHING CHARACTERISTICS
(Note 5)
Turn
−
On Time (10% V
to 90% I
)
t
t
25
120
20
30
200
25
m
s
m
s
IN
D
on
Turn
−
Off Time (90% V
to 10% I
)
IN
D
off
Turn
−
On Rise Time (10% I
to 90% I
)
t
rise
m
s
D
D
V
= 10
V
, V
=
1
2
V
,
DD
GS
D
I
= 2.5 A, R
= 4.7
W
L
Turn
−
Off Fall Time (90% I
to 10% I
)
t
fall
50
70
m
s
D
D
Slew
−
Rate ON (70% to 50% V
)
−
dV /dt
0.8
0.3
1.2
0.5
V
/m
s
V
/m
s
DD
DS ON
Slew
−
Rate OFF (50% to 70% V
)
dV /dt
DS OFF
DD
SELF PROTECTION CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (Note 4)
J
Current Limit
V
= 10
V
, V
=
5
.0
V
, T
=
2
5
°
C
I
LIM
3.7
2.3
4.3
3.0
5.0
3.7
A
DS
GS
J
V
DS
= 10
V
, V
=
5
.0
V
, T
=
1
50
°
C
GS J
(Note 5)
V
= 10
V
, V
=
1
0
V
, T
=
2
5
°
C
GS J
4.2
2.7
4.8
3.6
5.4
4.5
DS
V
DS
= 10
V
, V
=
1
0
V
, T
=
1
50
°
C
GS J
(Note 5)
V
= 5.0 V (Note 5)
°
C
T
e
mperature Limit (Turn
−
off)
Thermal Hysteresis
T
150
150
175
15
200
185
GS
LIM(off)
V
GS
= 5.0 V
D
T
LIM(on)
V
= 10 V (Note 5)
T
e
mperature Limit (Turn
−
off)
Thermal Hysteresis
T
165
15
GS
LIM(off)
V
GS
= 10 V
D
T
LIM(on)
GON
GATE INPUT CHARACTERISTICS
(Note 5)
Device ON Gate Input Current
V
= 5 V I
= 1.0 A
I
50
400
0.05
0.4
m
A
GS
D
V
= 10 V I
= 1.0 A
D
GS
GS
Current Limit Gate Input Current
V
= 5
V
, V
=
1
0 V
I
mA
DS
GCL
V
GS
= 10
V
, V
=
1
0 V
DS
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
4. Fault
conditions are viewed as beyond the normal operating range of the part.
5. Not
subject to production testing.
3
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
GATE INPUT CHARACTERISTICS
(Note 5)
Thermal Limit Fault Gate Input Current
V
= 5
V
, V
=
1
0 V
I
GTL
0.15
0.7
mA
GS
DS
V
GS
= 10
V
, V
=
1
0 V
DS
ESD ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (Note 5)
J
Electro
−
Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
4. Fault
conditions are viewed as beyond the normal operating range of the part.
5. Not
subject to production testing.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
1000
100
T
Jstart
= 25
°
C
T
Jstart
= 25
°
C
T
Jstart
= 150
°
C
T
Jstart
= 150
°
C
1
10
10
10
100
10
5
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch
−
off
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
Current vs. Load Inductance
1000
100
10
10
T
= 25
°
C
Jstart
T
= 25
°
C
Jstart
1
T
= 150
°
C
Jstart
T
= 150
°
C
Jstart
0.1
1
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
Switch
−
off Current vs. Time in Clamp
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
8 V
T =
25
°
C
10 V
6 V
A
V
= 10 V
−
40
°
C
DS
25
°
C
5 V
4 V
100
°
C
3.5 V
150
°
C
3 V
V
= 2.5 V
GS
0
1
2
3
4
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Figure 6. On
−
state Output Characteristics
Figure 7. Transfer Characteristics
5
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
350
400
300
200
100
0
150
°
C, V
= 5 V
150
°
C, I
= 0.5 A
GS
D
300
250
200
150
100
50
150
°
C, I
= 1.7 A
D
150
°
C, V
= 10 V
GS
100
°
C, V
= 5 V
GS
100
°
C, I
= 1.7 A
D
100
°
C, V
= 10 V
100
°
C, I
= 0.5 A
GS
D
25
°
C, V
= 5 V
GS
25
°
C, I
= 1.7 A
25
°
C, I
= 0.5 A
D
D
25
°
C, V
= 10 V
GS
−
40
°
C, V
= 5 V
−
40
°
C, I
= 0.5 A
GS
D
−
40
°
C, I
= 1.7 A
D
−
40
°
C, V
= 10 V
GS
4
5
6
7
8
9
10
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
(V)
I (A)
D
Figure 8. R
DS(on)
vs. Gate
−
Source Voltage
Figure 9. R
DS(on)
vs. Drain Current
8
7
6
5
4
3
2
2
1.75
1.5
I
D
= 1.7 A
−
40
°
C
25
°
C
V
= 5 V
GS
1.25
1
100
°
C
150
°
C
V
GS
= 10 V
0.75
0.5
V
= 10 V
DS
−
40
−
20
0
20
40
60
80 100
120 140
5
6
7
8
9
10
T (
°
C)
V
GS
(V)
Figure 10. Normalized R
DS(on)
vs. Temperature
Figure 11. Current Limit vs. Gate
−
Source
Voltage
8
7
6
5
4
3
2
10
1
V
GS
= 0 V
150
°
C
V
= 10 V
GS
0.1
100
°
C
0.01
0.001
0.0001
25
°
C
V
= 5 V
GS
−
40
°
C
V
= 10 V
DS
−
40
−
20
0
20
40
60
80 100
120 140
10
15
20
25
(V)
30
35
40
T (
°
C)
V
DS
J
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain
−
to
−
Source Leakage Current
6
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
1.1
1.2
1.1
1
I
V
= 150
m
A
D
= V
1
0.9
0.8
0.7
0.6
0.5
GS
DS
−
40
°
C
25
°
C
100
°
C
0.9
0.8
0.7
0.6
150
°
C
V
8
= 0 V
9
GS
−
40
−
20
0
20
40
60
80 100
120 140
1
2
3
4
5
I
6
7
10
T (
°
C)
(A)
S
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source
−
Drain Diode Forward
Characteristics
1
0.8
0.6
0.4
0.2
0
200
150
100
50
I
V
R
= 2.5 A
= 12 V
I
V
R
= 2.5 A
D
D
= 12 V
DD
DD
= 0
W
= 0
W
G
G
−
dV /d
DS t(on)
dV /d
DS t(off)
t
d(off)
t
f
t
r
t
d(on)
0
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
V
GS
(V)
V
GS
(V)
Figure 16. Resistive Load Switching Time vs.
Figure 17. Resistive Load Switching
Drain
−
Source Voltage Slope vs. Gate
−
Source
Gate
−
Source Voltage
Voltage
100
75
50
25
0
1
0.8
0.6
0.4
0.2
0
I
V
= 2.5 A
D
= 12 V
DD
−
dV /d
, V
= 10 V
DS t(on)
GS
t
, (V
= 10 V)
GS
d(off)
t , (V
= 5 V)
r
GS
t , (V
= 10 V)
f
t , (V
= 5 V)
f GS
GS
t
, (V
= 5 V)
GS
dV /d
, V
= 5 V
dV /d
, V
= 10 V
DS t(off)
GS
d(off)
DS t(off)
GS
t , (V
= 10 V)
r
GS
−
dV /d
, V
= 5 V
DS t(on)
GS
I
D
= 2.5 A
= 12 V
t
, (V
= 5 V)
GS
d(on)
V
DD
t
, (V
= 10 V)
d(on)
GS
0
400
800
1200
1600
2000
0
500
1000
(
W
)
1500
2000
R
(
W
)
R
G
G
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain
−
Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
7
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
100
50% Duty Cycle
20%
10 10%
5%
2%
1
0.1
1%
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance
−
SOT
−
223 Package
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH (sec)
Figure 21. Transient Thermal Resistance
−
DFN Package
8
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
−
DUT
G
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
VIN
VDS
90%
10%
t
+ t
rise
t +
t
d(off) fall
d(on)
90%
10%
IDS
Figure 23. Resistive Load Switching Waveforms
9
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
+
RG
VDD
DUT
G
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5 V
0 V
VIN
T
av
T
p
V
(BR)DSS
I
pk
VDD
VDS
IDS
V
DS(on)
0
Figure 25. Inductive Load Switching Waveforms
10
NCV8402, NCV8402A
ORDERING INFORMATION
Device*
†
Package
Shipping
NCV8402STT1G
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
NCV8402AMNT2G
SOT
−
223
(Pb
−
Free)
1000 /
T
a
pe & Reel
SOT
−
223
(Pb
−
Free)
4000 /
T
a
pe & Reel
DFN6
(Pb
−
Free)
2000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
NCV8402AMNWT1G
DFN6
(Pb
−
Free, Wettable Flank)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN6 3×3, 0.95P
CASE 506DK
ISSUE O
1
DATE 23 JUN 2016
SCALE 2:1
A
D
NOTES:
B
E
1. DIMENSIONS
AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMESNION
b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM THE TERMINAL TI
P
.
4. COPLANARITY
APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A4
PIN 1
REFERENCE
A1
PLATED
SURFACE
MILLIMETERS
2X
DIM MIN
0.75
A1
0.00
MAX
0.95
0.05
DETAIL B
L3
0.10
C
A
2X
A3
0.20 REF
A4
0.05
0.15
0.45
0.10
C
TOP VIEW
b
D
0.35
3.00 BSC
PLATED
SURFACE
D2
2.40
2.60
DETAIL B
A
0.10
C
C
E
3.00 BSC
A3
C
E2
1.50
1.70
e
L
0.95 BSC
0.30
L3
0.00
0.50
0.10
SECTION C
−
C
0.05
SEATING
PLANE
NOTE 4
SIDE VIEW
GENERIC
MARKING DIAGRAM*
D2
6X
L
1
3
C
XXXXX
XXXXX
ALYW
G
G
C
E2
XXXXX =
Specific Device Code
A
L
Y
W
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
6
4
6X
b
e
0.10 C
A B
0.05
C
NOTE 3
(Note: Microdot may be in either location)
BOTTOM VIEW
*This information is generic. Please refer
to device data sheet for actual part
marking.
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.30
Pb
−
Free indicator, “G” or microdot “
G
”,
2.70
may or may not be present.
PACKAGE
OUTLINE
1.80
1
0.95
PITCH
6X
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12549G
DFN6 3X3, 0.95P
PAGE 1 OF 1
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