onsemi-NDH8321C
| Part # | onsemi-NDH8321C |
Download  | onsemi-NDH8321C |
January 1999
NDH8321C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P -Channel enhancement
mode power
field effect transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and
other battery powered circuits where fast
N-Ch 3.8
A, 20 V, R
DS(ON)
=0.035
W
@ V
GS
= 4.5 V
R
DS(ON)
=0.045
W
@ V
GS
=2.7 V
P-Ch -2.7 A, -20V, R
DS(ON)
=0.07
W
@ V
GS
= -4.5 V
R
DS(ON)
=0.095
W
@ V
GS
= -2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
switching, low in-line power loss, and resistance
transients are needed.
to
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D2
D2
4
5
6
D1
D1
3
2
S2
G2
7
8
S1
G1
SuperSO
T
TM
-8
Mark: .8321C
1
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
N-Channel
P-Channel
-20
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
20
±8
±8
V
(Note 1)
(Note 1)
3.8
15
-2.7
A
-10
P
D
Power Dissipation for Single Operation
0.8
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
q
JA
R
q
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
Thermal Resistance, Junction-to-Case
156
40
°C/W
°C/W
(Note 1)
© 1999 Fairchild Semiconductor Corporation
NDH8321C Rev.C1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Parameter
Conditions
Type
Min
Typ
Max
Units
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
20
V
-20
V
I
DSS
Zero Gate Voltage
Drain Current
1
10
µA
µA
µA
µA
nA
nA
T
J
= 55
o
C
T
J
= 55
o
C
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
-10
100
-100
I
GSSF
I
GSSR
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
All
All
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µA
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= 4.5
V, I
D
= 3.8
A
N-Ch
P-Ch
N-Ch
0.4
0.3
0.7
0.45
-0.7
-0.5
1
V
T
J
= 125
o
C
T
J
= 125
o
C
T
J
= 125
o
C
0.8
-1
-0.4
-0.3
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
0.029 0.035
0.043 0.063
0.036 0.045
W
V
GS
= 2.7
V, I
D
= 3.3
A
V
GS
= -4.5 V,
I
D
= -2.7 A
P-Ch
0.061
0.07
T
J
= 125
o
C
0.087 0.125
0.082 0.095
V
GS
= -2.7 V,
I
D
= -2.3A
V
GS
= 4.5 V, V
DS
= 5
V
V
GS
= 2.7 V, V
DS
= 5
V
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 5
V, I
D
= 3.8
A
V
DS
= -5 V, I
D
= -2.7 A
I
D(on)
On-State Drain Current
N-Ch
P-Ch
15
5
A
S
-10
-3
g
FS
Forward Transconductance
N-Ch
P-Ch
15
8
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N-Channel
V
DS
= 10 V,
V
GS
= 0 V,
f =
1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
700
865
370
415
145
150
pF
pF
pF
iss
C
oss
C
rss
Output Capacitance
P-Channel
V
DS
= -10 V,
V
GS
= 0 V,
f =
1.0 MHz
Reverse Transfer Capacitance
NDH8321C Rev.C1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
ns
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn – On Delay Time
Turn – On Rise Time
Turn – Off Delay Time
Turn – Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DD
= 5 V,
I
D
= 1
A,
V
GEN
= 4.5 V, R
GEN
= 6
W
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
8
11
15
22
t
r
22
40
ns
P-Channel
V
DD
= -5 V,
I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
W
25
50
t
D(off)
48
90
ns
78
150
40
t
23
ns
f
55
100
28
Q
g
N-Channel
V
DS
= 10
V,
I
D
= 3.8
A, V
GS
= 4.5
V
19.6
16
nC
nC
nC
23
Q
gs
Q
gd
2.5
2.4
6.5
5.1
P-Channel
V
DS
= -10 V,
I
D
= -2.7
A, V
GS
= -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
0.67
-0.67
1.2
A
V
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V,
I
S
= 0.67 A
(Note2)
V
GS
= 0 V,
I
S
= -0.67 A
(Note2)
0.65
-0.7
-1.2
Notes:
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
q
JC
is guaranteed
by design while R
q
CA
is determined by the user’s board design.
T
J
–
T
A
T
J
–
T
A
=
R
+
R
q
CA
(
t
)
q
J
P
D
(
t
) =
=
I
2
(
t
) ´
R
DS
(
ON
)
@
T
J
D
R
(
t
)
A
q
J
C
Typical R
q
JA
for single device operation using the board layout
shown below on 4.5″x5″ FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8321C Rev.C1
Typical Electrical Characteristics:
N-Channel
2
1
.
8
1
.
6
1
.
4
1
.
2
1
20
V
GS
= 4.5V
2.5
3.0
16
2.7
V
GS
=
2
.0V
2.0
12
2.5
8
2.7
3.0
3.5
1.5
4.0
4
4.5
0
0
.
8
0
0
.
5
1
1
.
5
2
2
.
5
3
0
4
8
12
, DRAIN CURRENT (A)
D
16
20
V
, DRAIN-SOURCE VOLTAGE (V)
I
DS
Figure 2. N-Channel On-Resistance Variation
with Gate Voltage and
Drain Current.
Figure 1. N-Channel On-Region Characteristics.
1
.
8
2
V
GS
= 4.5 V
I
D
= 3.8A
1
.
6
T
= 125°C
V
GS
= 4.5V
J
1.5
1
1
.
4
1
.
2
1
25°C
–
5
5°C
0.5
0
0
.
8
0
.
6
0
4
8
12
16
20
-50
-25
0
25
50
75
100
125
150
I
, DRAIN CURRENT (A)
T
, JUNCTION T
E
M
P
ERATURE (°C)
J
D
Figure 4. N-Channel On-Resistance Variation with Drain
Current and Temperature.
Figure 3. N-Channel On-Resistance Variation
with Temperature.
15
1.3
T
= -55°C
J
V
DS
= 5V
25°C
125°C
V
DS
= V
GS
1.2
1.1
1
12
9
I
D
=
2
50µA
0.9
0.8
0.7
0.6
0.5
6
3
0
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
T
, JUNCTION TE
M
P
ER
A
TURE (°C)
V
, GATE TO SO
U
R
CE VOLTAGE (V)
GS
J
Figure 5. N-Channel Transfer
Characteristics.
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics: N-Channel
(continued)
1
.
1
5
1
.
1
1
.
1
5
1
.
1
I
D
= 250µA
I
D
= 250µA
1
.
0
5
1
1
.
0
5
1
0
.
9
5
0
.
9
5
0
.
9
–
5
0
0
.
9
–
5
0
–
2
5
0
25
50
75
100
125
150
–
2
5
0
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
J
J
Figure 7. N-Channel Breakdown Voltage
Variation with Temperature.
Figure 8.
N-Channel Body Diode Forward
Voltage Variation with Current and
Temperature
.
2500
2000
5
V
DS
= 5V
I
D
= 3.8A
10V
1500
4
15V
1000
C
iss
3
2
1
0
500
C
oss
300
200
f = 1 MHz
V
GS
= 0V
C
rss
100
0.1
0.2
V
0.5
1
3
5
10
20
0
5
10
15
20
25
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 10. N-Channel Gate Charge
Characteristics.
Figure 9. N-Channel Capacitance
Characteristics.
30
V
DS
= 5V
T
= -55°C
J
25
20
15
10
5
25°C
125°C
0
0
4
8
12
16
20
I
, DRAIN CURRENT (A)
D
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDH8321C Rev.C1
Typical Electrical Characteristics:
P-Channel (continued)
2
.
5
-15
–
3
.5
V
GS
=-4.5V
–
3
.
0
–
2
.7
–
2
.
5
V
GS
= -2.0V
-12
-9
-6
-3
0
2
1
.
5
1
-2.5
-2.7
–
2
.
0
-3.0
-3.5
-4.5
–
1
.
5
0
.
5
0
-3
-6
-9
-12
-15
0
-1
-2
-3
-4
I
, DR
A
IN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
D
Figure 12. P-Channel On-Region Characteristics.
Figure 13. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
1
.
6
1.8
V
GS
= -4.5V
I
D
= -2.7A
1.6
1.4
1.2
1
V
GS
= -4.5V
1
.
4
1
.
2
1
T
= 125°C
J
25°C
0.8
0.6
0.4
–
5
5°C
0
.
8
0
.
6
-50
-25
0
25
50
75
100
125
150
0
-3
-6
-9
-12
-15
T
, JUNCTION T
E
M
P
ERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 14. P-Channel On-Resistance Variation
with Temperature.
Figure 15. P-Channel On-Resistance Variation
with Drain Current and Temperature.
-8
-6
-4
-2
0
1.2
T
= –
5
5°C
V
DS
= -5V
J
V
DS
=
V
GS
25°C
125°C
1.1
1
I
D
= -250µA
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
-0.5
-1
-1.5
-2
-2.5
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 17. P-Channel Gate Threshold Variation
with Temperature.
Figure 16. P-Channel Transfer Characteristics.
NDH8321C Rev.C1
Typical Electrical Characteristics: P-Channel
(continued)
10
3
1
.
1
1
.
0
8
1
.
0
6
1
.
0
4
1
.
0
2
1
V
GS
= 0V
I
D
= -250µA
T
= 125°C
J
1
0.5
25°C
0.1
0.01
-55°C
0
.
9
8
0
.
9
6
0
.
9
4
0.001
0.0001
-50
-25
0
T
25
50
75
100
125
150
0
0.2
-V
0.4
0.6
0.8
1
1.2
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FOR
W
ARD VOLTAGE (V)
SD
Figure 19.
P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature
.
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
5
4
3
2
1
0
2500
V
DS
= -5V
I
D
= -2.7A
–
1
0V
1500
1000
–
1
5V
C
iss
C
oss
500
300
200
f = 1 MHz
V
GS
= 0 V
C
rss
100
0.1
0
5
10
15
20
0.2
-V
0.5
1
2
5
10
20
Q
, GATE CHARGE (nC)
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 20. P-Channel Capacitance Characteristics.
Figure 21. P-Channel Gate Charge Characteristics.
20
V
DS
= -4.5V
T
= -55°C
J
16
12
8
25°C
125°C
4
0
0
-4
-8
-12
-16
-20
I
D
, DRAIN CURRENT (A)
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
NDH8321C Rev.C1
Typical Thermal Characteristics: N & P-Channel
15
10
30
10
5
2
1
3
1
0
.
5
0.3
V
GS
= 4.5V
V
GS
= -4.5V
SINGLE PULSE
= See Note 1
0
.
1
SINGLE PULSE
0.1
R
JA
= See Note 1c
T
A
= 25°C
0
.
0
5
q
R
JA
q
0.03
0.01
T
A
= 25°C
0
.
0
1
0
.
1
0
.
2
0
.
5
1
2
5
10
20 30
0.1
0
.
2
0.5
DS
1
2
5
10
30
– V
, DRAIN-SOURCE VOLTAGE (V)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 24.
P-Channel Maximum Safe Operating
Area.
Figure 23.
N-Channel Maximum Safe Operating
Area.
1
D = 0.5
R
(t) = r(t)
* R
JA
q
JA
q
R
= See Note 1
0
.
2
JA
q
0
.
1
0
.
1
0.05
P(pk)
0.02
t
1
0
.
0
1
t
2
0
.
0
1
T
– T
= P
* R
(t)
Single Pulse
J
A
JA
q
Duty
C
ycle, D = t
/ t
1
2
0
.
0
01
0
.
0
001
0
.
0
01
0
.
0
1
0.1
, TI
M
E
(
sec)
1
10
100
300
t
1
Figure 25. Transient Thermal Response Curve
.
Note: Thermal
characterization performed using the conditions described in note1 .
Transient thermal response will change depending on the circuit board design.
t
o
n
t
off
V
DD
t
d
(off)
t
d
(on)
t
r
t
f
90%
R
L
90%
V
IN
D
V
OUT
V
OUT
10%
10%
90%
V
GS
R
GEN
DUT
G
V
IN
50%
50%
S
10%
PULSE W
IDTH
Figure 27. N or P-Channel Switching Waveforms
.
Figure 26. N or P-Channel Switching Test Circuit
.
NDH8321C Rev.C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
SyncFET™
TinyLogic™
UHC™
CROSSVOLT™
E
2
CMOS
TM
VCX™
FACT™
FACT Quiet Series™
QS™
FAST
®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
