onsemi-NDM3000
| Part # | onsemi-NDM3000 |
Download  | onsemi-NDM3000 |
May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description
Features
±3.0A, ±30V, 2.5W
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These
devices are produced using Fairchild’s
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14
10
12
15
Q1
Q2
Q3
Q4
Q5
Q6
1,16
4,13
8,9
2
5
7
3,6
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter
NDM3000
± 30
Units
Drain-Source Voltage (All Types)
Gate-Source Voltage (All Types)
V
V
A
V
DSS
V
GSS
I
D
± 20
Drain Current
Q1+Q4 or Q1+Q6 or Q3+Q2 –
Continuous Q3+Q6
or Q5+Q2 or Q5+Q4
± 3.0
– Pulsed
(Note 1a & 2)
± 10
2.5
Total Power Dissipation
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
(Note 1b)
W
P
D
1.6
(Note 1c)
1.4
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
©
1
997
F
a
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em
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onductor Corporat
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NDM3000 Rev. E
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
50
20
°C/W
°C/W
R
JA
q
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
Thermal Resistance, Junction-to-Case
Q1+Q4 or Q1+Q6 or Q3+Q2 or
R
JC
q
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1)
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
All
All
±30
V
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= ± 250 µA
V
DS
= ±20 V,
V
GS
= 0 V
Zero Gate Voltage
Drain Current
±1
µA
µA
nA
T
J
=55
o
C
±25
Gate – Body Leakage, Forward
All
±100
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= -10 V,
I
D
= -3.0 A
ON CHARACTERISTICS
(Note 3)
V
GS(th)
Gate Threshold Voltage
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
-1
-0.7
1
-1.6
-1.25
1.7
-3
-2.2
3
V
T
J
=125
o
C
T
J
=125
o
C
T
J
=125
o
C
0.7
1.2
2.2
R
DS(ON)
Static Drain-Source
On-Resistance
0.125 0.16
W
0.18
0.16
0.07
0.1
0.29
0.25
0.09
0.16
0.13
V
GS
= -4.5 V,
I
D
= -1.0 A
V
GS
= 10 V,
I
D
= 3.0 A
Q2, Q4, Q6
T
J
=125
o
C
0.09
V
GS
= 4.5 V,
I
D
= 1.0 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= 10 V, V
DS
= 5 V
I
D(on)
On-State Drain Current
Q1, Q3, Q5
Q2, Q4, Q6
-10
10
A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Q1, Q3, Q5
V
DS
= -10 V,
V
GS
= 0 V,
f =
1.0 MHz
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
375
360
245
260
130
105
pF
pF
pF
Output Capacitance
Q2, Q4, Q6
V
DS
= 10 V,
V
GS
= 0 V,
f =
1.0 MHz
Reverse Transfer Capacitance
NDM3000 Rev. E
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max Units
SWITCHING CHARACTERISTICS
(Note 3)
t
D(on)
Turn – On Delay Time
Turn – On Rise Time
Turn – Off Delay Time
Turn – Off Fall Time
Total Gate Charge
Q1, Q3, Q5
V
DD
= -15
V, I
D
= -1
A,
V
GEN
= -10
V, R
GEN
= 6
W
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
10
9
40
40
40
40
90
90
50
50
25
25
ns
ns
13
21
21
21
5
t
r
Q2, Q4, Q6
V
DD
= 15
V, I
D
= 1
A,
V
GEN
= 10
V, R
GEN
= 6
W
ns
t
D(off)
t
f
ns
8
Q
g
Q
gs
Q
gd
Q1, Q3, Q5
V
DS
= -10
V,
I
D
= -3.0
A, V
GS
= -10
V
10
9.5
1.6
1.5
3
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
Q2, Q4, Q6
V
DS
= 10 V,
I
D
= 3.0
A, V
GS
= 10 V
2.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1, Q3, Q5
Q2, Q4, Q6
Q1, Q3, Q5
Q2, Q4, Q6
All
-1.2
1.2
A
V
Drain-Source Diode Forward
Voltage
-0.8
0.8
-1.3
1.3
V
SD
V
GS
= 0 V,
I
S
= -3.0 A
(Note 3)
V
GS
= 0 V,
I
S
= 3.0 A
(Note 3)
Reverse Recovery Time
100
ns
t
rr
V
GS
= 0 V, I
F
= ±3.0 A,
dI
F
/dt = 100 A/µs
Notes:
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
q
JC
is guaranteed by
design while R
q
CA
is determined by the user’s board design.
T
–
T
T
–
T
P
D
=
=
(
t
)
R
q
J
=
I
2
(
t
) ´
R
DS
(
O
N
J
A
J
A
( )
t
)
T
J
D
R
+
R t
( )
C
q
CA
q
J
A
Typical R
q
JA
using the board layouts shown below on 4.5″x5″ FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 80
o
C/W when mounted on a 0.027 in
2
pad of 2oz cpper.
c. 90
o
C/W when mounted on a 0.0028 in
2
pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDM3000 Rev. E
Typical Electrical Characteristics
-20
-15
-10
-5
20
V
GS
= -10V
V
GS
=10V
8.0
6.0
-8.0
-7.0
5.0
-6.0
-5.5
15
10
5
4.5
-5.0
-4.5
-4.0
4.0
3.5
-3.5
-3.0
3.0
0
0
0
1
2
3
0
-1
-2
-3
-4
-5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. P-Channel On-Region
Characteristics.
Figure 1. N-Channel On-Region Characteristic.
3
3
V
GS
= -3.5V
-4.0
V
GS
= 3.5V
2.5
2
2.5
2
-4.5
-5.0
4.0
-5.5
4.5
-6.0
5.0
6.0
1.5
1
1.5
1
-7.0
-8.0
-10
8.0
10
0.5
0.5
0
3
6
9
12
15
0
-3
-6
-9
-12
-15
I
, DRAIN CURRENT (A)
D
I
, DRAIN CURRENT (A)
D
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
1.6
I
D
= 3A
I
D
= -3A
1.4
1.2
1
1.4
1.2
1
V
GS
= 10V
V
GS
= -10V
0.8
0.6
0.8
0.6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
J
J
Figure 6. P-Channel On-Resistance Variation
with Temperature.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
NDM3000 Rev. E
Typical Electrical Characteristics
2
1.5
1
2
V
G
S
= -10V
V
GS
= 10 V
T
= 125°C
J
1.5
T =
125°C
J
25°C
25°C
-55°C
1
-55°C
0.5
0.5
0
-3
-6
-9
-12
-15
0
3
6
9
12
15
I
, DRAIN CURRENT (A)
D
I
, DRAIN CURRENT (A)
D
Figure 8.
P-Channel On-Resistance Variation with
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Drain Current and Temperature
.
-10
10
T
= -55°C
V
DS
= 10V
J
V
DS
= -10V
T
= -55°C
125°C
25°C
J
125°C
-8
-6
-4
-2
0
8
6
4
2
0
25°C
-1
-2
V
-3
-4
-5
-6
1
2
3
4
5
, GATE TO SOURCE VOLTAGE (V)
GS
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 10. P-Channel Transfer
Characteristics.
Figure 9. N-Channel Transfer
Characteristics.
1.2
1.1
1
1.2
1.1
1
V
D
S
= V
G
S
V
DS
=
V
GS
I
D
=
–
250µA
I
D
=
2
50µA
0.9
0.8
0.7
0.6
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
T ,
JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
J
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDM3000 Rev. E
Typical Electrical Characteristics
1.1
1.08
1.06
1.04
1.02
1
1.12
I
D
=
–
250µA
I
D
= 250µA
1.08
1.04
1
0.98
0.96
0.94
0.96
0.92
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
J
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
1000
800
1000
800
500
500
C
iss
C
iss
300
200
300
200
C
oss
C
oss
rss
100
100
50
f = 1 MHz
V
GS
= 0V
f = 1 MHz
V
GS
=
0
V
C
C
rss
50
0.1
0.2
0.5
1
2
5
10
30
0.1
0.2
0.5
1
2
5
10
30
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 15. N-Channel Capacitance
Characteristics.
Figure 16. P-Channel Capacitance
Characteristics.
10
8
10
V
DS
= -10V
V
DS
= 10V
I
D
= 3A
I
D
= -3A
20V
-20V
-15V
8
6
4
2
0
15V
6
4
2
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
, GATE CHARGE (nC)
g
Q
, GATE CHARGE (nC)
g
Figure 18. P-Channel Gate Charge Characteristics.
Figure 17. N-Channel Gate Charge Characteristics.
NDM3000 Rev. E
Typical Electrical Characteristics
10
6
5
4
3
2
1
0
V
DS
= -10V
T
= -55°C
V
DS
=
10V
J
T
= -55°C
J
8
6
4
2
0
25°C
25°C
125°C
125°C
0
2
4
6
8
10
0
-2
-4
-6
-8
-10
I
, DRAIN CURRENT (A)
I
, DRAIN CURRENT (A)
D
D
Figure 20. P-Channel Transconductance Variation
with Drain Current and Temperature.
Figure 19. N-Channel Transconductance Variation with
Drain Current and Temperature.
t
o
n
t
o
ff
V
DD
t
d(off)
t
d
(on)
t
r
t
f
R
L
90%
V
IN
90%
D
V
OUT
V
O
UT
10%
10%
90%
V
GS
R
GEN
DUT
G
V
I
N
50%
50%
S
10%
PULSE WIDTH
Figure 21. N or P-Channel Switching Test Circuit
.
Figure 22. N or P-Channel Switching Waveforms
.
NDM3000 Rev. E
Typical Thermal and Electrical Characteristics
3.5
3
4
3.5
3
1a
1a
2.5
2
2.5
2
1b
1c
1b
1c
1.5
1
4.5″x5″ FR-4 PCB
Ta = 25C
Still Air
4.5″x5″ FR-4 PCB
Ta = 25C
Still Air
1.5
1
Vgs = -10V
0.5
0
0.2
0.4
0.6
0.8
2
1
0
0.2
0.4
0.6
0.8
2
1
2oz COPPER MOUNTING PAD AREA (in
)
2oz COPPER MOUNTING PAD AREA (in
)
Figure 24. P-Ch DC Drain Current Capability versus
Copper Mounting Pad Area.
Figure 23. SOIC-16 3 Leadframe Device DC Power
Dissipation versus Copper Mounting Pad Area
10
5
3
1
4.5
1a
4
0.3
3.5
1b
V
G
S
=
±
10V
0.1
3
SINGLE PULSE
1c
R
JA
= See Note 1c
T
A
= 25°C
q
4.5″x5″ FR-4 PCB
Ta = 25C
Still Air
Vgs = 10V
0.03
0.01
2.5
2
0.1
0.2
0.5
±V
1
2
5
10
30
50
0
0.2
0.4
0.6
0.8
1
, DRAIN-SOURCE VOLTAGE (V)
2
DS
2oz COPPER MOUNTING PAD AREA (in
)
Figure 25. N-Ch DC Drain Current Capability
versus Copper Mounting Pad Area.
Figure 26. P-Ch Typical Safe Operating Area
1
D = 0.5
0.2
0.5
0.2
0.1
R
(t) = r(t)
* R
JA
q
JA
q
R
= See Note 1c
0.1
0.05
JA
q
0.05
P(pk)
0.02
0.01
Single Pulse
0.02
0.01
t
1
t
2
0.005
T
– T
= P
* R
(t)
JA
J
A
q
Duty Cycle, D = t
/ t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 27. Transient Thermal Response Curve
.
Note: Thermal
characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDM3000 Rev. E
SOIC-16 Tape and Reel Data and Package Dimensions
SOIC(16lds) Packaging
Configuration:
Figure 1.0
Packaging Description:
ELECTROSTAT
I
C
SOIC-16 parts are shipped in tape. The carrier tape is
SENS
I
T
I
V
E DEVICES
DO NO
T
S
M
HI
P
OR
S
TO
RE
N
E
AR
S
T
RO NG
E
L
E
C
T
R
OS
T
A
T
I
C
E
L
E
C
T
R
O
AGN
E
TI
C,
M
AG NE
T
IC
O
R R ADIO AC
T
I
V
E
F
I
E
L
D S
made from
a dissipative (carbon filled) polycarbonate
T
N
R
D
A
T
E
PT NUMB
E
R
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13″ or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
PEEL STRE
N
G
T
H MIN
_
_
_
_
_
_
__
_
_
_
_
__
g
m
s
MAX __
_
_
_
_
_
_
_
_
_
_
_g
m
s
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside
a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
D85AB
NDM3001
F
Customized
Label
F
F
F
F
Pin 1
SOIC (16lds) Packaging Information
Standard
(no flow code)
L86Z
Packaging Option
Packaging type
TNR
2,500
Rail/Tube
Qty per Reel/Tube/Bag
Reel Size
45
–
SOIC-16 Unit Orientation
13″ Dia
Box Dimension (mm)
Max qty per Box
343x64x343 530x130x83
5,000
0.1437
0.7735
13,500
0.1437
–
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 2500
SPEC:
FSID: NDM3000
ESD Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(16lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
October 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape
Configuration:
Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
SOIC
(16lds)
(16mm)
6.60
+/-0.30
10.35
+/-0.25
16.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.40
+/-0.40
0.450
+/-0.150
13.0
+/-0.3
0.06
+/-0.02
Notes: A0,
B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(16lds) Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim D
min
Dim A
max
Dim N
DETAIL AA
W3
See detail AA
13″ Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.646 +0.078/-0.000
16.4 +2/0
0.882
22.4
0.626 – 0.764
15.9 – 19.4
16mm
13″ Dia
July 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram):
0.1437
October 1999, Rev. A1
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Definition of Terms
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Advance Information
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