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September 1997
NDP6020P / NDB6020P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
-24 A, -20 V. R
DS(ON)
= 0.05
W
@ V
GS
= -4.5 V.
These logic level P-Channel enhancement mode power field
effect transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
R
DS(ON)
= 0.07
W
@ V
GS
= -2.7 V.
R
DS(ON)
= 0.075
W
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol Parameter
NDP6020P
NDB6020P
Units
Drain-Source Voltage
-20
±8
V
V
A
V
DSS
V
GSS
I
D
Gate-Source Voltage – Continuous
Drain Current
– Continuous
– Pulsed
-24
-70
60
W
W/
°
C
°C
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
0.4
Operating and Storage Temperature Range
-65 to 175
T
J
,T
STG
©
1
997
F
a
i
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i
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S
em
i
c
onductor Corporat
i
o
n
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage
Drain Current
-1
µA
µA
nA
nA
-10
T
J
= 55°C
I
GSSF
I
GSSR
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
V
GS
= 8
V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
-100
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -4.5 V, I
D
= -12 A
-0.4
-0.3
-0.7
-0.56
0.041
0.06
-1
V
T
J
= 125°C
T
J
= 125°C
-0.7
Static Drain-Source On-Resistance
0.05
0.08
0.07
0.075
R
DS(ON)
W
R
DS(ON)
R
DS(ON)
I
D(on)
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
V
GS
= -2.7 V, I
D
= -10 A
V
GS
= -2.5 V, I
D
= -10 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -12 A
0.059
0.064
-24
A
S
Forward Transconductance
14
g
FS
DYNAMIC CHARACTERISTICS
Input Capacitance
V
DS
= -10 V,
V
GS
= 0 V,
f =
1.0 MHz
1590
725
pF
pF
pF
C
iss
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
215
SWITCHING CHARACTERISTICS
(Note 1)
t
D(on)
Turn – On Delay Time
Turn – On Rise Time
V
DD
= -20 V,
I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6
W
15
27
30
60
nS
nS
t
r
t
D(off)
Turn – Off Delay Time
Turn – Off Fall Time
120
70
250
150
nS
nS
t
f
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10 V,
I
D
= -24
A, V
GS
= -5 V
25
5
35
nC
nC
nC
10
NDP6020P Rev.C1
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-24
-80
-1.3
A
A
I
SM
V
SD
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= -12 A
(Note 1)
-1.1
60
V
ns
V
GS
= 0 V,
I
F
= -24 A,
dI
F
/dt =
100 A/µs
t
rr
I
rr
Reverse Recovery Current
-1.7
A
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
2.5
°
C/W
°
C/W
R
JC
q
Thermal Resistance, Junction-to-Ambient
62.5
R
JA
q
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6020P Rev.C1
Typical Electrical Characteristics
-50
1.8
1.6
1.4
1.2
1
V
GS
= -5.0V
-4.5
V
GS
= -2.5 V
-4.0
-40
-30
-20
-10
0
-2.7
-3.5
-3.0
-3.0
-2.7
-2.5
-3.5
-4.0
-4.5
-5.0
-2.0
0.8
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
-50
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
2
V
GS
= -4.5V
I
D
= -12A
1.6
1.4
1.2
1
V
G
S
=-4.5V
T =
125°C
J
1.5
1
25°C
-55°C
0.8
0.5
0.6
-50
0
-10
-20
-30
-40
-50
-25
0
25
50
75
100
125
150
175
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
J
D
Figure 4. On-Resistance Variation with Drain
Figure 3. On-Resistance Variation
Current and Temperature
.
with Temperature
.
-10
-8
-6
-4
-2
0
1.2
1.1
1
T
J
= -55°C
V
DS
= -5V
V
DS
= V
GS
25°C
125°C
I
D
= -250µA
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
175
-0.5
-1
-1.5
-2
-2.5
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 6. Gate Threshold Variation with
Figure 5. Transfer Characteristics
.
Temperature
.
NDP6020P Rev.C1
Typical Electrical Characteristics
(continued)
20
10
1.08
I
D
= -250µA
V
GS
= 0V
4
1.06
1.04
1.02
1
T
= 125°C
J
1
25°C
-55°C
0
.
1
0
.
0
1
0.98
0
.
0
01
0
.
0
001
0.96
-50
-25
0
25
50
75
100
125
150
175
0
0
.
2
-V
0
.
4
0.6
0
.
8
1
1
.
2
T
, JUNCTION TEMPERATURE (°C)
J
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 7. Breakdown Voltage Variation with
Figure 8.
Body Diode Forward Voltage
Temperature
.
Variation with Current and Temperature
.
8
6
4
2
0
4000
V
DS
= -5V
I
D
= -24A
3000
-10V
2000
C
-15V
iss
1000
500
C
oss
300
200
C
rss
f = 1 MHz
V
GS
= 0 V
100
0
.
1
0
10
20
30
40
0
.
2
-V
0
.
5
1
2
5
10
20
Q
, GATE CHARGE (nC)
g
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
t
o
n
t
off
-V
DD
t
d(off)
t
d(on)
t
f
t
r
90%
R
L
90%
V
IN
D
V
O
UT
V
O
UT
10%
10%
90%
V
GS
R
GEN
DUT
G
V
IN
50%
50%
S
10%
INVERTED
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP6020P Rev.C1
Typical Electrical Characteristics
(continued)
30
100
60
V
DS
= – 5V
24
T =
-55°C
J
30
18
12
6
25°C
10
5
125°C
V
GS
= -4.5V
SINGLE PULSE
3
2
R
q
= 2.5 °C/W
JC
T
C
= 25°C
0
1
0
-5
-10
-15
-20
-25
1
2
5
10
20
30
I
, DRAIN CURRENT (A)
– V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 13. Transconductance Variation with Drain
Figure 14. Maximum Safe Operating Area
.
Current and Temperature
.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t)
* R
JC
q
JC
q
R
= 2.5 °C/W
JC
q
0.1
0.1
P(pk)
0.05
0.05
0.02
0.01
t
1
t
2
0.03
0.02
T
– T
= P
* R
(t)
Single Pulse
J
C
JC
q
Duty Cycle, D = t
1
/t
2
0.01
0.01
0.1
1
10
100
1000
t
1
,TIME (m s)
Figure 15. Transient Thermal Response Curve.
NDP6020P Rev.C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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