onsemi-NDS0610-G
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DATA SHEET
P-Channel Enhancement
Mode Field Effect Transistor
SOT
−
23
CASE 318
−
08
NDS0610
General Description
This P
−
Channel Enhancement Mode Field Effect Transistors are
Produced using
onsemi
’s proprietary, high cell density, DMOS
technology. This very high density process has been designed to
minimize on
−
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with a minimum of
effort, in most applications requiring up to 120 mA DC and can deliver
current up to 1 A.
D
G
S
This product is particularly suited to low voltage applications
requiring a low current high side switch.
Features
MARKING DIAGRAM
•
−
0.12 A,
−
60 V
♦
R
♦
R
= 10
ꢀ ꢁ
V =
−
10 V
GS
DS(on)
610 M
G
=
ꢂ ꢃ
ꢀ ꢁ
V =
−
4.5 V
DS(on)
GS
G
•
V
o
ltage Controlled P
−
Channel Small Signal Switch
•
High Density Cell design for Low R
DS(on)
610 =
Device Code
•
High Saturation Current
M
= Date Code*
G
= Pb
−
Free Package
ABSOLUTE MAXIMUM RATINGS
T =
25
°
C unless otherwise noted
A
(NOTE: Microdot may be in either location)
Symbol
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Value
−
60
20
Unit
V
*Date Code orientation and/or location may vary
depending upon manufacturing location.
V
DSS
V
GSS
V
I
D
A
Drain Current
ORDERING INFORMATION
−
0.12
−
1
†
Device
Shipping
Package
−
Pulsed
NDS0610
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
P
D
W
Maximum Power Dissipation
0.36
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Derate Above 25
°
C
2.9
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
°
C
J
stg
T
L
Maximum Lead
T
e
mperature for
Soldering Purposes, 1/16” from
Case for 10 Seconds
300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2023
−
Rev 4
NDS0610/D
NDS0610
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
350
°
C/W
θ
JA
ELECTRICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
V
I
= 0
V
, I
=
−
10
ꢄ
A
−
60
−
−
−
V
DSS
GS
D
Breakdown Voltage
T
e
mperature
Coefficient
=
−
10
ꢄ
A, Referenced to 25
°
C
−
−
53
mV/
°
C
ꢅ
BV
DSS
ꢅ
T
J
D
I
Zero Gate Voltage Drain Current
V
V
V
=
−
48
V
, V
= 0 V
−
−
−
−
−
−
−
1
−
200
10
ꢄ
A
ꢄ
A
nA
DSS
DS
GS
=
−
48
V
, V
= 0 V T
=
1
25
°
C
DS
GS
GS
J
I
Gate
−
Body Leakage
=
20
V
, V
= 0 V
DS
GSS
V
Gate Threshold Voltage
V
I
= V
,
I =
−
1 mA
−
1
−
1.7
−
3
−
3.5
V
GS(th)
DS
GS D
Gate Threshold Voltage
T
e
mperature Coefficient
=
−
1 mA, Referenced to 25
°
C
−
−
mV/
°
C
ꢅ
V
GS(th)
ꢅ
T
J
D
R
Static Drain
−
Source On
−
Resistance
V
GS
V
GS
V
GS
=
−
10
V
, I
=
−
0.5 A
−
1.0
1.3
1.7
10
20
16
ꢀ
DS(on)
D
=
−
4.5
V
, I
=
−
0.25 A
D
=
−
10
V
, I
=
−
0.5 A, T
= 125
°
C
D
J
I
On
−
State Drain Current
V
=
−
10
V
, V
=
−
10 V
−
0.6
−
−
−
A
D(on)
GS
DS
DS
g
FS
Forward Transconductance
V
=
−
10
V
, I
=
−
0.1 A
70
430
mS
D
Dynamic Characteristics
C
Input Capacitance
V
=
−
25
V
, V
= 0 V, f =
1
.0 MHz
−
−
−
−
79
10
4
−
−
−
−
pF
pF
pF
ꢀ
iss
DS
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
V
=
−
15 m
V
, f =
1
.0 MHz
10
G
t
Turn
−
On Delay Time
Turn
−
On Rise Time
Turn
−
Off Delay Time
Turn
−
Off Fall Time
T
o
tal Gate Change
Gate
−
Source Change
Gate
−
Drain Change
V
V
=
−
25
V
, I
=
−
0.12 A,
−
−
−
−
−
−
−
2.5
6.3
10
5
12.6
15
15
2.5
−
ns
ns
d(on)
DD
GS
D
=
−
10
V
, R
= 6
Ω
GEN
t
r
t
ns
d(off)
t
f
7.5
1.8
0.3
0.4
ns
Q
V
DS
V
GS
=
−
48
V
, I
=
−
0.5 A,
nC
nC
nC
g
D
=
−
10 V
Q
gs
gd
Q
−
Drain
−
Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
−
0.8
17
−
0.24
−
1.5
−
A
V
V
SD
Drain
−
Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
GS S
t
rr
ns
nC
F
iF
t
Q
15
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient thermal resistance where the case thermal reference is defined as the solder
ꢆ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢆ
ꢆ
JC
CA
a) 350
°
C/W when mounted on a
minimum pad.
Scale 1 :
1 on
letter size paper
2. Pulse
T
e
st: Pulse Width
≤
300
ꢄ
s, Duty Cycle
≤
2.0%
2
NDS0610
TYPICAL CHARACTERISTICS
2.2
2
1.4
V
GS
=
−
10 V
−
60 V
−
4.5 V
−
4.0 V
1.2
1
V
GS
=
−
3.0 V
−
3.5 V
−
3.5 V
1.8
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1
−
3.0 V
−
4.0 V
−
4.5 V
−
6.0 V
−
10 V
−
2.5 V
0.8
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
−
I ,
DRAIN CURRENT (A)
D
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 2. On
−
Resistance Variation With
Figure 1. On
−
Region Characteristics
Drain Current and Gate Voltage
5
1.8
I
D
=
−
0.5 A
I
D
=
−
0.25 A
V
=
−
10 V
GS
1.6
1.4
1.2
1
4
3
T =
125
°
C
A
2
1
0
0.8
0.6
0.4
T =
25
°
C
A
−
50
−
25
0
150
25
50
75
100 125
2
4
6
8
10
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
T ,
JUNCTION TEMPERATURE (
5
C)
J
Figure 4. On
−
Resistance Variation with
Gate
−
to
−
Source Voltage
Figure 3. On
−
Resistance Variation with
Temperature
10
1.2
1
V
DS
=
−
10 V
V
GS
= 0 V
25
°
C
T =
−
55
°
C
A
1
0.1
125
°
C
0.8
T =
125
°
C
A
0.6
0.4
0.2
0
25
°
C
0.01
0.001
−
55
°
C
0.0001
0.2
4.5
1
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
−
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
3
NDS0610
TYPICAL CHARACTERISTICS
(CONTINUED)
100
10
8
f = 1 MHz
V
DS
=
−
12 V
−
24 V
80
I
D
=
−
0.5 A
V
GS
= 0 V
C
ISS
−
48 V
60
6
40
4
C
OSS
2
20
0
C
RSS
0
0
10
20
30
40
50
60
0
0.4
0.8
1.2
1.6
2
Q ,
GATE CHARGE (nC)
g
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
5
SINGLE PULSE
= 30
°
C/W
T =
25
°
C
A
R
ꢆ
JA
4
3
2
100 us
1
R
LIMIT
DS(on)
1 ms
10 ms
100 ms
0.1
1 s
10 s
DC
V
GS
=
−
10 V
0.01
SINGLE PULSE
= 350
°
C/W
1
0
R
ꢆ
JA
T =
25
°
C
A
0.001
1
10
−
V ,
DRAIN
−
SOURCE VOLTAGE (V)
100
0.01
0.1
1
10
100
t1, TIME (s)
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.1
0.2
0.1
R JA
(t) = r(t) * R
JA
q
q
R JA =
350
5
C/W
q
0.05
P(pk)
0.02
0.01
t
1
t
2
0.01
T
J
−
T =
P * R
JA (t)
q
A
Duty Cycle, D = t1/t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
t ,
TIME (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXM
G
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
PIN 1.
ANODE
2. EMITTER
3. COLLECTOR
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1.
ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE
−
ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
CATHODE
2. ANODE
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 2 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS
:
For additional information, please contact your local Sales Representative at
