onsemi-NDT014L

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August 1996  
NDT014L  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
2.8 A, 60 V. R

DS(ON)

= 0.2
W
@ V

GS

= 4.5
 
V  
These N-Channel logic level enhancement mode power field  
effect transistors are produced using Fairchild’s proprietary,  
high cell density, DMOS technology.This very high density  
process is especially tailored to minimize on-state resistance,  
provide superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes.Thesedevices are particularly suited for low voltage  
applications such as DC motor control and DC/DC  
conversion where fast
 
switching, low in-line
 
power loss, and  
resistance to transients
 
are needed.  
R

DS(ON)

= 0.16
W
@ V

GS

= 10 V.  
High density cell design for extremely low R

DS(ON)  

.
High power and current handling capability in a widely used  
surface mount package.  
_________________________________________________________________________________  
D
D
S
G
D
S
G
Absolute Maximum Ratings
 
T

A

= 25°C unless otherwise noted  
Symbol Parameter  
NDT014L  
60  
Units  
V

DSS  

V

GSS  

I

D  

Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
± 20  
Drain Current  
– Continuous  
– Pulsed  
(Note 1a)  
(Note 1a)  
± 2.8  
± 10  
Maximum Power Dissipation  
3
W
P

D  

(Note 1b)  
(Note 1c)  
1.3  
1.1  
T

J

,T

STG  

Operating and Storage Temperature Range  
-65 to 150  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
42  
12  
°C/W  
°C/W  
R
JA  
q
R
JC  
q
©
1
997
 
F
a
i
r
c
h
i
ld
S
em
i
c
onductor Corporat
i
o
n  
NDT014L Rev.D  

Electrical Characteristics
(T

A

= 25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  
V

GS

= 0
 
V, I

D

= 250 µA  
V

DS

= 60
 
V, V

GS

= 0
 
V  
60  
V
Zero Gate Voltage
 
Drain Current  
25  
µA  
µA  
nA  
nA  
250  
100  
-100  
T

J

= 55°C  
I

GSSF  

I

GSSR  

Gate – Body Leakage, Forward  
Gate – Body Leakage, Reverse  
V

GS

= 20
 
V, V

DS

= 0
 
V  
V

GS

= -20
 
V, V

DS

= 0
 
V  
ON CHARACTERISTICS
(Note 2)  
V

GS(th)  

Gate Threshold Voltage  
V

DS

= V

GS

, I

D

= 250
 
µA  
V

GS

= 4.5 V, I

D

= 2.8
 
A  
1
1.5  
1.1  
3
V
0.8  
2
T

J

= 125°C  
T

J

= 125°C  
Static Drain-Source On-Resistance  
0.17  
0.22  
0.12  
0.2  
0.36  
0.16  
R

DS(ON)  

W
V

GS

= 10 V,
 
I

D

= 3.4 A  
V

GS

= 4.5
 
V , V

DS

= 5
 
V  
V

GS

= 10 V, V

DS

= 5
 
V  
V

GS

= 5 V,
 
I

D

= 2.8 A  
I

D(on)  

On-State Drain Current  
5
A
S
10  
G

FS  

Forward Transconductance  
4.2  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
214  
70  
pF  
pF  
pF  
C

iss  

C

oss  

C

rss  

V

DS

= 30 V,
 
V

GS

= 0 V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
27  
SWITCHING CHARACTERISTICS
(Note 2)  
Turn – On Delay Time  
Turn – On Rise Time  
Turn – Off Delay Time  
Turn – Off Fall Time  
Total Gate Charge  
6
12  
25  
28  
18  
5
ns  
ns  
t

D(on)  

t

r  

t

D(off)  

t

f  

V

DD

= 30 V, I

D

= 3 A,  
V

GEN

= 10 V, R

GEN

= 12
 
W  
14  
15  
10  
3.6  
0.8  
1.4  
ns  
ns  
nC  
nC  
nC  
Q

g  

Q

gs  

Q

gd  

V

DS

= 10 V,  
I

D

= 2.8 A, V

GS

= 4.5 V  
Gate-Source Charge  
Gate-Drain Charge  
NDT014L Rev.D  

Electrical Characteristics
(T

A

= 25°C unless otherwise noted)  
Symbol Parameter
 
Conditions  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Min  
Typ  
Max  
Units  
I

S  

Maximum Continuous Drain-Source Diode Forward Current  
2.3  
1.3  
A
V
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
0.85  
V

SD  

V

GS

= 0 V, I

S

= 2.3
 
A
(Note 2)  
t

rr  

V

GS

= 0
 
V, I

F

= 2.3 A
 
dI

F

/dt = 100 A/µs  
140  
ns  
Notes:  
T
R
–
T  
T
–
T  
J
J
A
A
( )  

2

( )  
=
I

D

t
´
R

DS
(
ON
)
@
T

R

q

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the  
J
( )  
t
1.
P

D

t
=  
=
( )  
t
R
+
R  
q
JA  
q
JC  
q
CA  
solder mounting surface of the drain pins. R

q

JC

is guaranteed by design while R

q

CA

is defined by users. For general reference: Applications on 4.5″x5″ FR-4 PCB under still air environment, typical  
R

q

JA

is found to be:  
a. 42

o

C/W with 1 in

2

of 2 oz copper mounting pad.  
b. 95

o

C/W with 0.066 in

2

of 2 oz copper mounting pad.  
c. 110

o

C/W with 0.0123 in

2

of 2 oz copper mounting pad.  
1c  
1b  
1a  
Scale 1 : 1 on letter size paper  
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
NDT014L Rev.D  

Typical Electrical Characteristics  
2
1.75  
1.5  
10  
V

GS

= 10V  
6.0  
5.0  
4.5  
4.0  
8
6
4
2
0
V

GS

=3.0V  
3.5  
3.5  
1.25  
1
4.0  
4.5  
3.0  
5.0  
6.0  
8
0.75  
0.5  
10  
2.5  
0
2
4
6
10  
0
1
2
3
4
5
I
, DRAIN CURRENT (A)  
V
, DRAIN-SOURCE VOLTAGE (V)  
DS  
D
Figure 2. On-Resistance Variation with Gate  
Voltage and Drain Current.  
Figure 1. On-Region Characteristics.  
1.75  
2
V

GS

= 4.5V  
I

D

= 2.8A  
T =
 
125°C  
J
1.75  
1.5  
1.25  
1
V

GS

= 4.5V  
1.5  
1.25  
1
25°C  
0.75  
0.5  
-55°C  
0.75  
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
T
, JUNCTION TEMPERATURE (°C)  
I
, DRAIN CURRENT (A)  
J
D
Figure 3. On-Resistance Variation with  
Temperature.  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature.  
1.2  
10  
8
T
J
= -55°C  
V

DS

= V

GS  

V

DS

= 5V  
25°C  
125°C  
I

D

= 250µA  
1.1  
1
0.9  
0.8  
0.7  
6
4
2
0
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
V
, GATE TO SOURCE VOLTAGE (V)  
T ,
 
JUNCTION TEMPER
A
T
URE (°C)  
GS  
J
Figure 5. Transfer Characteristics.  
Figure 6. Gate Threshold Variation with  
Temperature.  
NDT014L Rev.D  

Typical Electrical Characteristics  
10  
1
1.12  
V

GS

= 0V  
I

D

= 250µA  
1.08  
1.04  
1
T
= 125°C  
J
0.1  
25°C  
0.01  
0.001  
0.0001  
-55°C  
0.96  
0.92  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
T
, JUNCTION TEMPERATURE (°C)  
J
V
, BODY DIODE FORWARD VOLTAGE (V)  
SD  
Figure 8. Body Diode Forward Voltage Variation  
Figure 7. Breakdown Voltage Variation with  
Temperature.  
with Current and Temperature
.  
10  
700  
500  
V

DS

= 5V  
I

D

= 2.8A  
10V  
20V  
C
8
6
4
2
0
iss  
200  
C
oss  
100  
50  
C
rss  
f = 1 MHz  
V

GS

= 0V  
20  
10  
0.1  
0.2  
0.5  
V
1
2
5
10  
20  
40 60  
0
2
4
6
8
10  
, DRAIN TO SOURCE VOLTAGE (V)  
Q
, GATE CHARGE (nC)  
DS  
g
Figure 9. Capacitance Characteristics.  
Figure 10. Gate Charge Characteristics.  
t

o
n  

t

off  

V

DD  

t

d(off)  

t

d(on)  

t

r  

t

f  

R

L  

V

IN  

90%  
90%  
D
V

O
UT  

V
V

G
S  

OUT  
R

GEN  

10%  
10%  
DUT  
G
INVERTED  
90%  
S
V
50%  
50%  
IN  
10%  
PULSE WIDTH  
Figure 11. Switching Test Circuit
.  
Figure 12. Switching Waveforms
.  
NDT014L Rev.D  

Typical Thermal Characteristics  
3.5  
3
8
V

DS

= 5V  
1a  
T =
 
-55°C  
J
6
4
2
0
2.5  
2
25°C  
125°C  
1.5  
1
1b  
1c  
4.5″x5″ FR-4 Board  
T

A  

25

o  

Still Air  
=
C
0.5  
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
2
2oz COPPER MOUNTING PAD AREA (in  
)
I
, DRAIN CURRENT (A)  
D
Figure 14. SOT-223 Maximum Steady- State  
Power Dissipation versus Copper  
Mounting Pad Area.  
Figure 13. Transconductance Variation with Drain  
Current and Temperature.  
20  
10  
5
4
3
2
1
0
1a  
1
1 b  
0.5  
1c  
V

GS

= 4.5V  
SINGLE PULSE  
0.1  
4 .5″x5″
 
FR-4 Board  
T

A

2
5

o  

Still Air  
4.5V  
R

JA

=See Note1c  
T

A

= 25°C  
q
=
C
0.05  
V
=
GS  
0.01  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.5  
V
1
2
5
10  
30  
50  
80  
2
2oz COPPER MOUNTING PAD AREA (in  
)
, DRAIN-SOURCE VOLTAGE (V)  
DS  
Figure 15. Maximum Steady- State Drain  
Current versus Copper Mounting Pad  
Area.  
Figure 16. Maximum Safe Operating Area
.  
1
0.5  
D = 0.5  
0.2  
0.2  
0.1  
R
(t) = r(t)
 
* R  
JA  
JA  
q
q
0.1  
R
= See Note 1 c  
JA  
q
0.05  
0.05  
P(pk)  
0.02  
0.01  
0.02  
0.01  
t

1  

t

2  

0.005  
T
– T
 
= P
 
* R  
(t)  
J
A
JA  
Single Pulse  
q
Duty Cycle, D = t

1

/
t

2  

0.002  
0.001  
0.0001  
0.001  
0.01  
0.1  
, TIME (sec)  
1
10  
100  
300  
t
1
Figure 17. Typical Transient Thermal Impedance Curve
.  
Remark: Thermal characterization performed under the conditions of Note 1c.
 
Should better thermal design employs, R

q

JA

will be  
lower and reach thermal equivalent sooner.  
NDT014L Rev.D  

SOT-223 Tape and Reel Data and Package Dimensions  
SOT-223 Packaging  
Configuration:
Figure 1.0  
Customized Label  
Packaging Description:  
SOT-223 parts are shipped in tape. The carrier tape is  
made from
 
dissipative (carbon filled) polycarbonate  
a
resin. The cover tape is a multilayer film (Heat Activated  
Adhesive in nature) primarily composed of polyester film,  
adhesive layer, sealant, and anti-static sprayed agent.  
These reeled parts in standard option are shipped with  
2,500 units per 13″ or 330cm diameter reel. The reels are  
dark blue in color and is made of polystyrene plastic (anti-  
static coated). Other option comes in 500 units per 7″ or  
177cm diameter reel. This and some other options are  
further described in the Packaging Information table.  
F63TNR Label  
Antistatic Cover Tape  
These full reels are individually barcode labeled and  
placed inside  
a standard intermediate box (illustrated in  
figure 1.0) made of recyclable corrugated brown paper.  
One box contains two reels maximum. And these boxes  
are placed inside  
a barcode labeled shipping box which  
comes in different sizes depending on the number of parts  
shipped.  
Static Dissipative  
Embossed Carrier Tape  
852  
F
852  
F
852  
F
852  
F
014  
014  
014  
014  
SOT-223 Packaging Information  
Standard  
(no flow code)  
Packaging Option  
D84Z  
SOT-223 Unit Orientation  
Packaging type  
TNR  
TNR  
500  
Qty per Reel/Tube/Bag  
Reel Size  
2,500  
13″ Dia  
7″ Dia  
Box Dimension (mm)  
Max qty per Box  
343x64x343 184x187x47  
5,000  
0.1246  
0.7250  
1,000  
0.1246  
0.1532  
343mm x 342mm x 64mm  
Weight per unit (gm)  
Weight per Reel (kg)  
F63TNR Label  
Intermediate box for Standard  
Note/Comments  
F63TNR Label  
F63TNR Label sample  
184mm x 184mm x 47mm  
Pizza Box for D84Z Option  
LOT: CBVK741B019  
QTY: 3000  
SPEC:  
FSID: PN2222A  
SOT-223 Tape Leader and Trailer  
Configuration:
Figure 2.0  
D/C1: D9842  
D/C2:  
QTY1:  
QTY2:  
SPEC REV:  
CPN:  
N/F: F  
(F63TNR)3  
Carrier Tape  
Cover Tape  
Components  
Trailer Tape  
Leader Tape  
300mm minimum or  
38 empty pockets  
500mm minimum or  
62 empty pockets  
September 1999, Rev. B  

SOT-223 Tape and Reel Data and Package Dimensions, continued  
SOT-223 Embossed Carrier Tape  
Configuration:
Figure 3.0  
P0  
D0  
T
E1  
E2  
F
W
K0  
Wc  
B0  
Tc  
A0  
D1  
P1  
User Direction of Feed  
Dimensions are in millimeter  
A0  
B0  
W
D0  
D1  
E1  
E2  
F
P1  
P0  
K0  
T
Wc  
Tc  
Pkg type  
0.292  
+/-  
0.0130  
SOT-223  
(12mm)  
6.83  
+/-0.10  
7.42  
+/-0.10  
12.0  
+/-0.3  
1.55  
+/-0.05  
1.50  
+/-0.10  
1.75  
+/-0.10  
10.25  
min  
5.50  
+/-0.05  
8.0  
+/-0.1  
4.0  
+/-0.1  
1.88  
+/-0.10  
9.5  
+/-0.025  
0.06  
+/-0.02  
Notes: A0,
 
B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481  
rotational and lateral movement requirements (see sketches A, B, and C).  
0.5mm  
maximum  
20 deg maximum  
Typical  
component  
cavity  
center line  
0.5mm  
maximum  
B0  
20 deg maximum component rotation  
Typical  
component  
center line  
Sketch A (Side or Front Sectional View)  
Component Rotation  
Sketch C (Top View)  
Component lateral movement  
A0  
Sketch B (Top View)  
Component Rotation  
SOT-223 Reel Configuration:
Figure 4.0  
W1 Measured at Hub  
Dim A  
Max  
Dim A  
max  
See detail AA  
Dim N  
7
“
D
iameter Option  
B Min  
Dim C  
See detail AA  
Dim D  
min  
W3  
13″ Diameter Option  
W2 max Measured at Hub  
DETAIL AA  
Dim W2  
Dimensions are in inches and millimeters  
Reel  
Option  
Tape Size  
12mm  
Dim A  
Dim B  
Dim C  
Dim D  
Dim N  
Dim W1  
Dim W3 (LSL-USL)  
7.00  
177.8  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
5.906  
150  
0.488 +0.078/-0.000  
12.4 +2/0  
0.724  
18.4  
0.469 – 0.606  
11.9 – 15.4  
7″ Dia  
13.00  
330  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
7.00  
178  
0.488 +0.078/-0.000  
12.4 +2/0  
0.724  
18.4  
0.469 – 0.606  
11.9 – 15.4  
12mm  
13″ Dia  
July 1999, Rev. B  

6.70  
6.20  
B
0.10  
C B  
3.10  
2.90  
3.25  
4
1.90  
A
3.70  
3.30  
6.10  
1.90  
1
3
0.84  
0.60  
2.30  
2.30  
0.95  
4.60  
0.10  
C B  
LAND PATTERN RECOMMENDATION  
SEE DETAIL A  
1.80 MAX  
7.30  
6.70  
0.08  
C
C
0.10  
0.00  
NOTES: UNLESS OTHERWISE SPECIFIED  
A) DRAWING
 
BASED ON JEDEC REGISTRATION  
TO-261C, VARIATION AA.  
B) ALL
 
DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS DO NOT INCLUDE BURRS  
OR MOLD FLASH. MOLD FLASH OR BURRS  
DOES NOT EXCEED 0.10MM.  
D) DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M-2009.  
R0.15±0.05  
R0.15±0.05  
10°  
5°  
GAGE  
PLANE  
0.35  
0.20  
E) LANDPATTERN
 
NAME: SOT230P700X180-4BN  
F) DRAWING
 
FILENAME: MKT-MA04AREV3  
10°  
0°  
TYP  
0.25  
10°  
5°  
0.60 MIN  
SEATING  
PLANE  
1.70  
DETAIL A  
SCALE: 2:1  

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