onsemi-NGTB03N60R2DT4G

NGTB03N60R2DT4G  

IGBT  

600V, 4.5A, N-Channel  

ww

w

.onsemi.com  

Features  



Reverse Conducting

I

I

I

GBT  

Electrical Connection  

N-Channel  



IGBT V

 

(sat)=1.7V (typ) [I

 

=3A, V

 

=15V]  

CE GE  

C

2,4  



IGBT t =75ns (typ)  

f



Diode V

 

=1.5V (typ) [I

 

=3A]  

F

F



Diode t

 

=65ns (typ)  

rr  



5



s Short Circuit Capability  

1

1:Gate  

2:Collector  

3:Emitter  

4:Collector  

Applications  



General Purpose Inverter  

3

Specifications  

4

Absolute Maximum Ratings

at Ta=25



C, Unless otherwise specified  

DPAK  

CASE 369C  

2

1

Parameter  

Collector to Emitter Voltage  

Gate to Emitter Voltage  

Collector Current (DC)  

Limited by Tjmax  

Symbol  

Value  

600  

Unit  

V

3

V

V

CES  

V



20  

9

GES  

@Tc=25



C *

2  

@Tc=100



C *

2  

A

Marking Diagram  

1

I

C *  

A

4.5  

1

Gate  

Collector Current (Peak)  

Pulse width Llimited by Tjmax  

Diode Average Output Current  

Power Dissipation  

A

A

I

I

12  

4.5  

49  

CP  

O

A

Y

WW  

GTB  

0360RG  

2

4

Collector  

Collector  

P

W

D

3

2

Tc=25



C

(Our ideal heat dissipation condition)  

Junction Temperature  

*

Emitter  

Tj  

175  



C  



C  

= Device Code  

= Assembly Location  

= Year  

GTB0360R  

Tstg  



55

t

o

+

175  

Storage Temperature  

A

Y

Note :

 

*1

Collector Current is calculated from the following formula.



 

= Work Week  

= Pb-Free Package  

WW  

G

Tjmax – Tc  



I (Tc)=  

C

R (j-c)

×  

th  

V

(sat) (I

 

(Tc))  

C

CE  

*2

Our condition is radiation from backside.  

The method is applying silicone grease to the backside of the device and attaching  

the device to water-cooled radiator made of aluminum.  

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  

damage may occur and reliability may be affected.  

ORDERING INFORMATION  

See detailed ordering and shipping information on page 8 of this data sheet.  

©

Semiconductor Components Industries, LLC, 2015  

September 2015 – Re

v

. 3  

1

Publication Order Number :  

NGTB03N60R2DT4G/D  

NGTB03N60R2DT4G  

Electrical Characteristics

at Ta=25



C, Unless otherwise specified  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

600  

max  

Collector to

 

Emitter Breakdown Voltage  

Collector to Emitter Cut off Current  

V(  

)

I

=1mA, V

 

=0V  

GE  

V



A  

mA  

nA  

V

BR CES  

C

Tc=25



C  

10  

I

I

V

=600V, V

 

=0V  

GE  

CES  

CE  

Tc=150



C  

1



100  

7.0  

Gate to Emitter Leakage Current  

Gate to Emitter Threshold Voltage  

V

V

=



20V, V

 

=0V  

CE  

GES  

GE  

V

V

V

(th)  

GE  

=20V, I

 

=80



A  

4.5  

CE  

C

Tc=25



C  

1.7  

2.1  

V

Collector to Emitter Saturation Voltage  

(

)

V

=15V, I

 

=3A  

CE sat  

GE C  

Tc=100



C  

1.9  

1.5  

415  

17  

2.3  

V

Forward Diode Voltage  

Input Capacitance  

I =3A  

2.1  

V

F

F

Cies  

Coes  

Cres  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

ns  

ns  



J  



J  

nC  

nC  

nC  

ns  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-ON Delay Time  

Rise Time  

V

=20V, f=1MHz  

CE  

10  

t (on)  

27  

d

t

17  

r

V

=300V, I

 

=3A  

C

=30



, L=500



H  

CC  

Turn-ON Time  

ton  

85  

R

V

G

Turn-OFF Delay Time  

Fall Time  

t (off)  

d

59  

=0V/15V  

GE  

Vclamp=400V  

t

75  

f

Tc=25



C  

Turn-OFF Time  

toff  

172  

50  

See Fig.1, See Fig.2  

Turn-ON Energy  

Eon  

Eoff  

Qg  

Turn-OFF Energy  

27  

Total Gate Charge  

Gate to Emitter Charge  

Gate to Collector “Miller” Charge  

Diode Reverse Recovery Time  

17  

Qge  

Qgc  

V

=300V, V

 

=15V, I

 

=3A  

4.4  

7.6  

65  

CE GE  

C

t

I =3A,di/dt=200A/



s, V

 

=300V, See Fig.3  

CC  

rr  

F

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  

indicated by the Electrical Characteristics if operated under different conditions.  

Thermal Characteristics

at Ta=25



C, Unless otherwise specified  

Parameter  

Symbol  

Conditions  

Value  

Unit  

Tc=25



C  

(Our ideal heat dissipation condition) *

2  

Thermal Resistance IGBT (Junction to Case)  

Thermal Resistance (Junction to Ambient)  

Rth(j-c) (IGBT)  

Rth(j-a)  

3.06  

100  



C/W  



C/W  

Note :

 

*2

Our condition is radiation from backside.  

The method is applying silicone grease to the backside of the device and attaching  

the device to water-cooled radiator made of aluminum.  

2

NGTB03N60R2DT4G  

3

NGTB03N60R2DT4G  

4

NGTB03N60R2DT4G  

5

NGTB03N60R2DT4G  

t

rr  

— I  

F

200  

180  

160  

140  

120  

100  

80  

60  

40  

Tc=25  

°

C  

V

=300V  

CC  

di/dt=200A/

μ

s  

20  

0

0

2

4

6

8

10  

12  

14  

Forward Current, I

 

–

– A  

F

R (j-c)

 

–

–

P

ulse

 

Time  

th  

10  

7

5

3

2

Duty Cycle=0.5  

1.0  

7

5

0.2  

0.1  

3

2

0.1  

7

5

3

2

0.01  

0.000001  

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

Pulse Time, PT

 

–

– s  

Fig.1 Switching Time Test Circuit  

Fig.2 Timing Chart  

Diode  

V

GE  

90%  

10%  

0

500



H  

NGTB03N60R2DT4G  

I

C

DUT  

90%  

90%  

V

CC  

R

G

10%  

10%  

10%  

10%  

V

CE  

0

t

f

t

r

t (off)  

d

t (on)  

d

t

t

on  

off  

E

on  

E

off  

Fig.3 Reverse Recovery Time Test Circuit  

DUT  

NGTB03N60R2DT4G  

500



H  

V

CC  

Driver IGBT  

6

NGTB03N60R2DT4G  

Package Dimensions  

DPAK (SINGLE GAUGE)  

CASE 369C  

ISSUE F  

NOTES:  

1. DIMENSIONING AND TOLERANCING PER ASME  

Y14.5M, 1994.  

2. CONTROLLING DIMENSION: INCHES.  

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-  

MENSIONS b3, L3 and Z.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS, OR BURRS. MOLD  

FLASH, PROTRUSIONS, OR GATE BURRS SHALL  

NOT EXCEED 0.006 INCHES PER SIDE.  

5. DIMENSIONS D AND E ARE DETERMINED AT THE  

OUTERMOST EXTREMES OF THE PLASTIC BOD

Y

.  

6. DATUMS A AND B ARE DETERMINED AT DATUM  

PLANE H.  

A

E

C

A

b3  

B

c2  

4

L3  

L4  

Z

D

DETAIL A  

H

1

2

3

7. OPTIONAL MOLD FEATURE.  

INCHES  

DIM MIN

 

MAX  

0.086 0.094  

A1

0.000 0.005  

0.025 0.035  

MILLIMETERS  

NOTE 7  

MIN  

2.18  

0.00  

0.63  

0.72  

4.57  

0.46  

0.46  

5.97  

6.35  

2.29 BSC  

9.40 10.41  

1.40 1.78  

2.90 REF  

0.51 BSC  

MAX  

2.38  

0.13  

0.89  

1.14  

5.46  

0.61  

0.61  

6.22  

6.73  

c

b2  

e

BOTTOM VIEW  

A

SIDE VIEW  

b

b

b2

0.028 0.045  

b3

0.180 0.215  

M

0.005 (0.13)  

C

TOP VIEW  

1 : Gate  

2 : Collector  

3 : Emitter  

c

0.018 0.024  

c2

0.018 0.024  

Z

Z

D

E

e

0.235 0.245  

0.250 0.265  

0.090 BSC  

H

4 : Collector  

GAUGE  

PLANE  

SEATING  

PLANE  

H

L

L1  

L2  

0.370 0.410  

0.055 0.070  

0.114 REF  

L2  

C

0.020 BSC  

L3

0.035 0.050  

0.89  

1.27  

1.01  

L

BOTTOM VIEW  

A1  

L4  

Z

0.040  

L1  

ALTERNATE  

3.93  

0.155  

CONSTRUCTIONS  

DETAIL A  

ROTATED 90

 

CW  

GENERIC  

MARKING DIAGRAM*  

STYLE 1:  

PIN 1.

 

BASE  

STYLE 2:  

PIN 1.

 

GATE  

2. DRAIN  

STYLE 3:  

STYLE 4:  

PIN 1.

 

CATHODE  

2. ANODE  

STYLE 5:  

PIN 1.

 

GATE  

PIN 1.

 

ANODE  

2. CATHODE  

3. ANODE  

2. COLLECTOR  

3. EMITTER  

4. COLLECTOR  

2. ANODE  

3. CATHODE  

4. ANODE  

3. SOURCE  

4. DRAIN  

3. GATE  

4. ANODE  

XXXXXXG  

ALYWW  

AYWW  

XXX  

4. CATHODE  

STYLE 6:  

PIN 1.

 

MT1  

2. MT2  

STYLE 7:  

PIN 1.

 

GATE  

STYLE 8:  

PIN 1.

 

N/C  

STYLE 9:  

PIN 1.

 

ANODE  

2. CATHODE  

STYLE 10:  

PIN 1.

 

CATHODE  

2. ANODE  

XXXXXG  

2. COLLECTOR  

2. CATHODE  

3. GATE  

4. MT2  

3. EMITTER  

4. COLLECTOR  

3. ANODE  

4. CATHODE  

3. RESISTOR

 

ADJUST  

4. CATHODE  

3. CATHODE  

4. ANODE  

IC  

Discrete  

SOLDERING FOOTPRINT*  

XXXXXX =

 

Device Code  

A

L

Y

WW  

G

= Assembly Location  

= Wafer Lot  

=

Y

e

ar  

= Work Week  

= Pb-Free Package  

6.20  

0.244  

3.00  

0.118  

2.58  

0.102  

*This information is generic. Please refer  

to device data sheet for actual part  

marking.  

5.80  

0.228  

1.60  

0.063  

6.17  

0.243  

mm  

inches  

SCALE 3:1  

*For additional information on our Pb-Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

7

NGTB03N60R2DT4G  

ORDERING INFORMATION  

Device  

Marking  

Package  

Shipping (Qty / Packing)  

2500 / Tape & Reel  

AYWW  

GTB  

0360RG  

DPAK (SINGLE GAUGE)  

(Pb-Free / Halogen Free)  

NGTB03N60R2DT4G  

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our

T

a

pe and Reel Packaging Specifications  

Brochure, BRD8011/D.

 

http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiarie

s

i

n the United States  

and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  

S

CILLC reserves the right to make changes without  

further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilit

y

o

f its products for any particular purpose,  

nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including  

without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can  

and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are  

not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other application

s

i

ntended to support or  

sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  

directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  

negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all  

applicable copyright laws and is not for resale in any manner.  

8