onsemi-NGTB10N60FG

Ordering number : ENA2283A  

NGTB10N60FG  

N-Channel IGBT  

600V, 10A, V

 

(sat);1.5V, TO-220F-3FS  

CE  

Features  

•

IGBT V  

(sat)=1.5V typ. (I

 

=10A, V

 

=15V)  

GE  

•

Diode V

 

=1.3V typ.(I

 

=10A)  

F F  

CE  

•

IGBT I

 

=20A (Tc=25

°

C)  

C

•

Diode t

 

=70ns typ.  

C

rr  

•

Adaption of full isolation type package  

•

5

μ

s short circuit capability  

•

Enhansment type  

Applications  

•

Power factor correction of white goods appliance  

•

General purpose inverter  

TO-220F-3FS  

Specifications  

Absolute Maximum Ratings

at Ta = 25

°

C, Unless otherwise specified  

Parameter  

Collector to Emitter Voltage  

Gate to Emitter Voltage  

Symbol  

Conditions  

Value  

Unit  

V

V

CES  

600  

20  

V

GES  

V

@ Tc=25

°

C *

2  

@ Tc=100

°

C *

2  

20  

A

1

Collector Current (DC)  

I

*

C

Limited by Tjmax  

10  

A

Collector Current (Pulse)  

Diode Average Output Current  

Allowable Power Dissipation  

Junction Temperature  

I

I

Pulse width Limited by Tjmax  

72  

A

CP  

10  

A

O

P

Tc=25

°

C (Our ideal heat dissipation condition) *

2  

40  

W

°

C  

°

C  

D

Tj  

150  

Storage Temperature  

Tstg  

– 55 to +150  

Note :

*1

Collector Current is calculated from the following formula.  

Tjmax – Tc  

I (Tc)=  

C

R

th  

(j-c)  

×

V

(sat) (I

 

(Tc))  

C

CE  

*2

Our condition is radiation from backside.  

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  

damage may occur and reliability may be affected.  

Electrical Characteristics

at Ta = 25

°

C, Unless otherwise specified  

Value  

Parameter  

Symbol  

Conditions  

Unit  

min  

600  

typ  

max  

Collector to

 

Emitter Breakdown Voltage  

Collector to Emitter Cut off Current  

V(  

)

I

=500

μ

A, V

 

=0V  

GE  

V

μ

A  

mA  

nA  

V

BR CES  

C

Tc=25

°

C  

10  

I

I

V

=600V, V

 

=0V  

GE  

CES  

CE  

Tc=125

°

C  

1

100  

6.5  

1.7  

Gate to Emitter Leakage Current  

Gate to Emitter Threshold Voltage  

V

V

= 20V,

 

V  

=0V  

GES  

GE  

CE  

V

V

V

(off)  

GE  

=20V, I

 

=250

μ

A  

4.5  

CE  

C

Tc=25

°

C  

1.5  

V

Collector to Emitter Saturation Voltage  

(

)

V

=15V, I

 

=10A  

CE sat  

GE C  

Tc=125

°

C  

1.7  

1.3  

V

Diode Forward Voltage  

Input Capacitance  

I =10A  

V

F

F

Cies  

Coes  

Cres  

1440  

60  

pF  

pF  

pF  

Output Capacitance  

V

=20V,f=1MHz  

CE  

Reverse Transfer Capacitance  

30  

Continued on next page.  

ORDERING INFORMATION  

See detailed ordering and shipping information on page 6 of this data sheet.  

Semiconductor Components Industries, LLC, 2014  

April, 2014  

41814 TKIM TC-00003096/13014 TKIM

 

No.A2283-1/6  

NGTB10N60FG  

Continued from preceding page.  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

max  

Turn-ON Delay Time  

Rise Time  

t (on)  

40  

ns  

ns  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

ns  

d

V

=300V,I =10A  

C

=30

Ω

,L=200

μ

H  

CC  

t

23  

110  

145  

90  

r

R

G

Turn-ON Time  

ton  

t (off)  

V

GE  

=0V/15V  

Turn-OFF Delay Time  

Fall Time  

d

Vclamp=400V  

t

f

See Fig.1, See Fig.2  

Turn-OFF Time  

toff  

240  

55  

Total Gate Charge  

Gate to Emitter Charge  

Gate to Collector “Miller” Charge  

Diode Reverse Recovery Time  

Qg  

Qge  

Qgc  

V

CE  

=300V, V

 

=15V, I

 

=10A  

GE  

20  

C

10  

t

I =10A,

 

di/dt=100A/

μ

s, V

 

=50V, See Fig.3  

F CC  

70  

rr  

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  

indicated by the Electrical Characteristics if operated under different conditions.  

Thermal Characteristics

at Ta = 25

°

C, Unless otherwise specified  

Parameter  

Symbol  

Conditions  

Value  

Unit  

Thermal Resistance IGBT (junction- Case)  

Thermal Resistance Diode (junction- Case)  

Thermal Resistance (junction- ambient)  

Rth(j-c) (IGBT)  

Rth(j-c) (Diode)  

Rth(j-a)  

Tc=25  

Tc=25  

°

°

C (Our ideal heat dissipation condition)*2  

C (Our ideal heat dissipation condition)*2  

3.09  

4

°

C /W  

°

C /W  

°

C /W  

59.5  

Fig.1 Switching Time Test Circuit  

Fig.2 Timing Chart  

V

GE  

90%  

10%  

0

I

C

90%  

90%  

10%  

10%  

10%  

10%  

V

CE  

0

t

t

f

r

t

d

(off)  

t (on)  

d

t

t

on  

off  

IT16383  

Fig.3 Reverse Recovery Time Test Circuit  

No.A2283-2/6  

NGTB10N60FG  

No.A2283-3/6  

NGTB10N60FG  

No.A2283-4/6  

NGTB10N60FG  

No.A2283-5/6  

NGTB10N60FG  

Package Dimensions  

NGTB10N60FG  

TO-220F-3FS  

CASE 221AM  

ISSUE O  

Unit : mm  

1: Gate  

2: Collector  

3: Emitter  

Ordering & Package Information  

Markin

g  

Electrical Connection  

Shipping  

note  

Device  

Package  

2

TO-220F-3FS  

SC-67  

50  

NGTB10N60FG  

Pb-Free  

pcs. / tube  

GTB10N  

LOT No.  

60  

1

3

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o

f its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

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PS No.A2283-6/6