onsemi-NGTB15N60S1EG
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NGTB15N60S1EG
IGBT – Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications. Incorporated into the device is a rugged co−packaged
reverse recovery diode with a low forward voltage.
15 A, 650 V
Features
V
CEsat
= 1.5 V
•
Low Saturation
V
o
ltage Resulting in Low Conduction Loss
•
Low Switching Loss in Higher Frequency Applications
•
Soft Fast Reverse Recovery Diode
C
•
5
m
s Short Circuit Capability
•
Excellent Current versus Package Size Performance Density
•
This is a Pb−Free Device
G
Typical Applications
E
•
White Goods Appliance Motor Control
•
General Purpose Inverter
•
AC and DC Motor Control
C
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−emitter voltage
V
CES
650
TO−220
CASE 221A
STYLE 9
Collector current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
C
A
G
C
30
15
E
Pulsed collector current, T
limited by
I
120
A
A
pulse
CM
MARKING DIAGRAM
T
Jmax
Diode forward current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
F
30
15
Diode pulsed current, T
limited by
I
120
A
pulse
FM
T
Jmax
15N60S1G
AYWW
Gate−emitter voltage
V
$
20
V
GE
Power dissipation
@ T
C
= 25
°
C
@ T
C
= 100
°
C
P
W
D
117
47
Short circuit withstand time
t
5
m
s
°
C
°
C
°
C
SC
V
= 15
V
, V
=
4
00
V
, T
v
+150
°
C
GE
CE
J
A
Y
= Assembly Location
=
Y
e
ar
Operating junction temperature range
T
−55 to
+150
J
WW
G
= Work Week
= Pb−Free Package
Storage temperature range
T
−55 to
+150
stg
Lead temperature for soldering, 1/8” from
case for 5 seconds
T
SLD
260
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NGTB15N60S1EG
Package
Shipping
50 Units / Rail
TO−220
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2017 − Rev. 7
NGTB15N60S1E/D
NGTB15N60S1EG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.5
Unit
°
C/W
°
C/W
°
C/W
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
R
q
JC
q
JC
q
JA
R
R
2.3
60
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0
V
, I
=
5
00
m
A
C J
V
(BR)CES
650
−
720
660
−
−
V
V
GE
C
V
= 0
V
, I
=
5
00
m
A, T
= −40
°
C
GE
Collector−emitter saturation voltage
V
= 15 V , I
= 15 A
V
V
1.3
1.55
1.5
1.75
1.7
1.95
GE
C
CEsat
V
= 15 V , I
= 15 A, T
= 150
°
C
GE
C
J
Gate−emitter threshold voltage
V
GE
=
V
, I
= 250
m
A
4.5
5.5
6.5
V
CE
C
GE(th)
Collector−emitter cut−off current, gate−emitter
short−circuited
V
= 0
V
, V
=
6
50 V
I
−
−
10
−
−
200
m
A
GE
CE
CES
V
GE
= 0
V
, V
=
6
50
V
, T
=
1
50
°
C
CE
J
Gate leakage current, collector−emitter
short−circuited
V
= 20
V
, V
= 0 V
I
−
−
100
−
nA
S
GE
CE
GES
Forward Transconductance
DYNAMIC CHARACTERISTIC
Input capacitance
V
= 20
V
, I
=
1
5 A
g
fs
−
10.1
CE
C
C
C
−
−
−
−
−
−
1950
70
−
−
−
−
−
−
ies
Output capacitance
V
= 20
V
, V
= 0 V, f = 1
M
Hz
pF
nC
oes
CE
GE
Reverse transfer capacitance
Gate charge total
C
42
res
Q
88
g
Gate to emitter charge
Gate to collector charge
Q
Q
16
V
CE
= 480
V
, I
=
1
5 A, V
= 15 V
ge
C
GE
42
gc
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
65
28
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
ns
mJ
ns
Turn−off delay time
Fall time
t
170
d(off)
T =
25
°
C
J
V
= 400
V
, I
=
1
5 A
CC
C
t
f
140
R =
22
W
g
V
= 0 V / 15 V
Turn−on switching loss
Turn−off switching loss
T
o
tal switching loss
Turn−on delay time
Rise time
E
on
0.550
0.350
0.900
65
GE
E
off
E
ts
t
t
d(on)
t
r
28
Turn−off delay time
Fall time
180
d(off)
T =
150
°
C
J
V
CC
= 400 V, I
= 15 A
C
t
f
260
R =
22
W
g
V
= 0 V / 15 V
Turn−on switching loss
Turn−off switching loss
T
o
tal switching loss
DIODE CHARACTERISTIC
E
on
0.650
0.600
1.250
GE
E
off
mJ
V
E
ts
Forward voltage
V
= 0
V
, I
=
1
5 A
V
F
−
−
1.65
1.75
1.85
−
GE
F
V
= 0
V
, I
=
1
5 A, T
= 150
°
C
GE
F J
2
NGTB15N60S1EG
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
DIODE CHARACTERISTIC
Reverse recovery time
Test Conditions
Symbol
Min
Typ
Max
Unit
t
rr
−
−
−
−
−
−
270
350
5
−
−
−
−
−
−
ns
nc
A
T =
25
°
C
J
Reverse recovery charge
Reverse recovery current
Reverse recovery time
I =
15 A, V
= 200 V
Q
rr
F
R
di /dt
= 200 A/
µ
s
F
I
rrm
t
rr
350
1000
7.5
ns
nc
A
T =
125
°
C
J
Reverse recovery charge
Reverse recovery current
Q
I =
15 A
, V
= 200 V
rr
F
R
di /dt
= 200 A/
µ
s
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
60
50
40
30
20
60
T =
25
°
C
J
V
GE
= 17 V to 13 V
T =
150
°
C
J
V
GE
= 17 V to 13 V
V
= 11 V
GE
50
40
30
20
V
GE
= 11 V
V
V
= 9 V
= 7 V
GE
V
= 9 V
GE
10
0
10
0
GE
V
= 7 V
GE
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
70
60
50
40
30
20
60
50
40
30
20
T =
−40
°
C
T =
25
°
C
J
J
V
= 17 V to 13 V
GE
V
= 11 V
GE
−40
°
C
150
°
C
V
V
= 9 V
= 7 V
GE
10
0
10
0
GE
0
1
2
3
4
5
6
7
8
2
4
6
8
10
12
14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
2.5
10,000
1000
I
= 30 A
C
C
ies
2.0
1.5
1.0
I
I
= 15 A
= 10 A
= 5 A
C
C
I
C
100
10
C
oes
0.5
0
C
res
−50
−20
10
40
70
100
130
160
10 20 30 40 50 60 70 80 90
100
T , JUNCTION TEMPERATURE (
°
C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
4
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
20
15
35
30
25
20
15
10
5
T =
25
°
C
J
V
= 480 V
CES
−40
°
C
150
°
C
10
5
0
0
0
10
20 30 40 50 60 70
Q ,
GATE CHARGE (nC)
80
90 100
0
0.5
1
1.5
2
2.5
V , FORWARD VOLTAGE (V)
F
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
0.7
0.6
0.5
0.4
0.3
0.2
Eon
Eoff
t
f
t
d(off)
d(on)
100
t
t
r
10
1
V
V
= 400 V
= 15 V
= 15 A
CE
V
V
= 400 V
= 15 V
CE
GE
GE
I
C
0.1
0
I
C
= 15 A
Rg = 22
W
Rg = 22
W
0
20
40
60
80
100
120
140 160
0
20 40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 10. Switching Time vs. Temperature
Figure 9. Switching Loss vs. Temperature
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
V
V
= 400 V
= 15 V
CE
t
Eon
f
GE
T =
150
°
C
J
t
Rg = 22
W
d(off)
Eoff
t
d(on)
t
r
10
1
V
V
= 400 V
= 15 V
CE
GE
T =
150
°
C
Rg = 22
W
J
0.2
0
8
12
16
20
24
28
32
8
12
16
20
24
28
32
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
5
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
1.2
0.9
0.6
0.3
0
1000
Eon
V
V
I
= 400 V
= 15 V
= 15 A
CE
t
f
GE
t
d(off)
C
T =
150
°
C
J
100
t
d(on)
Eoff
t
r
10
1
V
V
= 400 V
= 15 V
= 15 A
CE
GE
I
C
T =
150
°
C
J
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (
W
)
Rg, GATE RESISTOR (
W
)
Figure 14. Switching Time vs. Rg
Figure 13. Switching Time vs. Rg
1.2
0.9
0.6
0.3
0
1000
100
V
= 15 V
= 15 A
GE
t
f
Eon
I
C
Rg = 22
W
T =
150
°
C
J
t
d_off
Eoff
t
d_on
t
r
10
1
V
= 15 V
= 15 A
Rg = 22
W
T =
150
°
C
GE
I
C
J
175 225
275
325
375
425
475
525 575
175 225
275 325
375
425
475
525 575
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
Figure 16. Switching Time vs. V
CE
1000
100
10
1000
100
10
1 ms
100
m
s
50
m
s
dc operation
1
1
Single Nonrepetitive
Pulse T
= 25
°
C
C
0.1
0.1 Curves
must be derated
linearly with increase
in temperature
V
GE
= 15
V
, T
=
1
25
°
C
C
0.01
0.01
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
6
NGTB15N60S1EG
TYPICAL CHARACTERISTICS
10
1
R
= 1.06
q
JC
50% Duty Cycle
R (
°
C/W)
t
(sec)
i
i
0.1
7.1E−5
1.0E−4
0.002
0.003
20%
10%
5%
R
C
R
C
R
0.05010
0.15051
0.33992
Junction
Case
1
1
2
2
n
0.1
C =
t
/R
i
i
i
0.10550 0.00999
2%
0.20020
0.11423
0.03
0.1
C
n
0.01 1%
Single Pulse
0.00001
Duty Factor = t
/t
1
2
Peak T
= P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
50% Duty Cycle
R
= 3.76
q
JC
20%
10%
5%
1
0.1
R (
°
C/W)
t
(sec)
i
i
0.01895
0.04097
0.12956
0.1
1.0E−7
1.0E−6
1.0E−5
7.1E−5
1.0E−4
Duty Factor = t
/t
1
2
2%
Peak T
= P
x Z
+ T
JC C
q
J
DM
1%
0.20199
Single Pulse
R
C
R
R
n
Junction
Case
1
1
2
1.62730
0.57301
0.002
0.003
C =
t
/R
0.01
0.001
0.45453 0.00498
i
i
i
0.40199
0.21558
0.03
0.1
C
C
n
2
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21.
Test Circuit for Switching Characteristics
7
NGTB15N60S1EG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 9:
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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NGTB15N60S1E/D
