onsemi-NGTB20N120IHRWG
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NGTB20N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on
−
state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.
20 A, 1200 V
Features
V
E
CEsat
= 2.10 V
off
= 0.45 mJ
•
Extremely Efficient Trench with Fieldstop Technology
•
Low Switching Loss Reduces System Power Dissipation
•
Optimized for Low Losses in IH Cooker Application
•
Reliable and Cost Effective Single Die Solution
•
These are Pb
−
Free Devices
C
Typical Applications
•
Inductive Heating
•
Consumer Appliances
•
Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
V
CES
I
C
Value
Unit
V
Collector
−
emitter voltage @ T
= 25
°
C
1200
J
Collector current
@ T
C
= 25
°
C
A
40
20
G
@ T
C
= 100
°
C
TO
−
247
CASE 340AL
C
E
Pulsed collector current, T
I
CM
120
A
A
pulse
limited by T
15 V
, 10
m
s Pulse, V
=
Jmax
GE
Diode forward current
@ T
C
= 25
°
C
I
F
40
20
MARKING DIAGRAM
@ T
C
= 100
°
C
Diode pulsed current, T
limited
I
FM
120
A
V
pulse
GE
by T
, 10
m
s Pulse, V
= 0 V
Jmax
Gate
−
emitter voltage
V
GE
$
20
$
25
Transient Gate
−
emitter voltage
(T
pulse
= 5
m
s, D < 0.10)
20N120IHR
AYWWG
Power Dissipation
P
D
W
@ T
C
= 25
°
C
384
192
@ T
C
= 100
°
C
Operating junction temperature
range
T
J
−
40 to +175
°
C
Storage temperature range
T
−
55 to +175
°
C
°
C
stg
A
Y
= Assembly Location
=
Y
e
ar
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260
WW
G
= Work Week
= Pb
−
Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
30 Units / Rail
NGTB20N120IHRWG TO
−
247
(Pb
−
Free)
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013
−
Rev. 1
NGTB20N120IHR/D
NGTB20N120IHRWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
40
Unit
°
C/W
°
C/W
Thermal resistance junction
−
to
−
case
Thermal resistance junction
−
to
−
ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector
−
emitter breakdown voltage,
gate
−
emitter short
−
circuited
V
=
0 V, I
= 500
m
A
V
(BR)CES
1200
−
−
V
V
GE
C
Collector
−
emitter saturation voltage
V
= 15
V
, I
=
2
0 A
V
CEsat
−
−
2.10
2.30
2.45
−
GE
C
V
GE
= 15
V
, I
=
2
0 A, T
= 175
°
C
C
J
Gate
−
emitter threshold voltage
V
GE
= V
, I
= 250
m
A
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector
−
emitter cut
−
off current, gate
−
emitter short
−
circuited
V
= 0
V
, V
=
1
200 V
CE J
=
I
−
−
−
−
0.2
2.8
mA
GE
CE
CES
V
GE
= 0
V
, V
=
1
200
V
, T
1
75
°
C
Gate leakage current, collector
−
emitter
short
−
circuited
V
= 20
V
, V
= 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
5320
124
100
225
36
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20
V
, V
= 0 V, f = 1
M
Hz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600
V
, I
=
2
0 A, V
= 15 V
C GE
ge
gc
98
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn
−
off delay time
t
−
−
−
−
−
−
235
155
0.45
255
250
1.10
−
−
−
−
−
−
ns
d(off)
T =
25
°
C
J
V
= 600
V
, I
=
2
0 A
C
CC
Fall time
t
f
R =
10
W
g
V
= 0 V/ 15V
Turn
−
off switching loss
Turn
−
off delay time
E
off
mJ
ns
GE
t
d(off)
T =
150
°
C
J
V
CC
= 600
V
, I
=
2
0 A
C
Fall time
t
f
R =
10
W
g
V
= 0 V/ 15V
Turn
−
off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0
V
, I
=
2
0 A
V
F
−
−
1.75
2.50
2.10
GE
F
V
GE
= 0
V
, I
=
2
0 A, T
= 175
°
C
F J
2
NGTB20N120IHRWG
TYPICAL CHARACTERISTICS
250
200
250
T =
25
°
C
J
13 V
11 V
T =
150
°
C
J
V
GE
= 20 to 15 V
200
150
100
50
V
= 20 to 15 V
GE
13 V
11 V
150
100
50
10 V
10 V
9 V
9 V
8 V
7 V
8 V
7 V
7
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
250
200
160
140
120
100
80
T =
−
40
°
C
J
V
GE
= 20 to 13 V
V
CE
= 20 V
T =
25
°
C
J
11 V
T =
150
°
C
J
150
100
50
10 V
60
40
9 V
7 V
20
8 V
0
0
0
1
2
3
4
5
6
7
8
9
10 11
12 13
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
V
GE
, GATE
−
EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
2.50
2.00
1.50
1.00
0.50
0.00
10,000
1000
C
ies
I
= 40 A
C
I
C
= 20 A
I
C
= 10 A
100
10
C
oes
C
res
T =
25
°
C
J
0
10
20
30 40 50
60
70
80 90
100
−
75
−
50
−
25
0
25 50 75 100
125 150
175 200
T , JUNCTION TEMPERATURE (
°
C)
J
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
3
NGTB20N120IHRWG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
8
T =
25
°
C
J
6
4
V
V
= 600 V
= 15 V
= 20 A
CE
T =
150
°
C
J
2
0
GE
I
C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q ,
GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.2
1.0
0.8
0.6
0.4
1000
100
V
V
= 600 V
= 15 V
= 20 A
CE
GE
I
C
E
off
t
d(off)
Rg = 10
W
t
f
V
CE
V
GE
= 600 V
= 15 V
0.2
0
I
= 20 A
C
Rg = 10
W
10
0
20
40
60
80
100
120
140 160
0
20
40
60
80
100
120
140
160
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
4
3
2
1
0
1000
V
V
= 600 V
= 15 V
CE
GE
T =
150
°
C
J
Rg = 10
W
t
d(off)
E
off
t
f
100
V
V
= 600 V
= 15 V
CE
GE
T =
150
°
C
J
Rg = 10
W
10
5
20
35
50
65
80
5
20
35
50
65
80
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
4
NGTB20N120IHRWG
TYPICAL CHARACTERISTICS
10000
1000
100
1.6
1.4
1.2
1
E
off
t
d(off)
t
f
0.8
0.6
0.4
0.2
0
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
GE
CE
GE
T =
150
°
C
T =
150
°
C
J
J
I
C
= 20 A
I
C
= 20 A
10
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
R ,
GATE RESISTOR (
W
)
g
R ,
GATE RESISTOR (
W
)
g
Figure 13. Switching Loss vs. R
g
Figure 14. Switching Time vs. R
g
1.6
1.4
1.2
1
1000
t
E
off
d(off)
t
f
100
10
0.8
0.6
0.4
0.2
0
I
V
= 20 A
C
I =
20 A
C
= 15 V
GE
V
GE
= 15 V
T =
150
°
C
Rg = 10
W
J
T =
150
°
C
J
Rg = 10
W
250 300 350 400
450 500 550 600
650 700 750
800
275 325
375 425 475 525
575 625
675 725
775
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
Figure 16. Switching Time vs. V
CE
1000
100
10
1000
100
10
1 ms
V
GE
= 15
V
, T
=
1
25
°
C
C
100
m
s
50
m
s
dc operation
1
Single Nonrepetitive
Pulse T
= 25
°
C
C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
5
NGTB20N120IHRWG
TYPICAL CHARACTERISTICS
140
120
100
80
1500
1450
T
C
= 80
°
C
1400
1350
1300
1250
1200
T
= 110
°
C
= 10
W
,
C
60
40
V
V
= 600
V
, T
≤
175
°
C, R
J gate
CE
20
= 0/15
V
, T
= 80
°
C or 110
°
C
GE
case
(as noted), D = 0.5
0
0.01
0.1
1
10
100
1000
−
40
−
15
10
35
60
85
110 135
FREQUENCY (kHz)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V
(BR)CES
vs. Temperature
1
R
= 0.392
Case
q
JC
50% Duty Cycle
R (
°
C/W)
0.04597
0.000101
0.009460 0.001057
0.004201 0.007527
0.020965 0.004770
0.040205 0.007965
0.003094 0.323174
0.037895 0.083449
t
(sec)
20%
10%
5%
i
i
0.1
0.000218
0.031311
R
C
R
C
R
Junction
1
1
2
2
n
C =
t
/R
i
i
i
2%
0.01
C
n
0.016194 0.617513
0.000100 316.228
0.246889 0.405040
Duty Factor = t
/t
1
2
Peak T
= P
x Z
+ T
JC C
Single Pulse
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. SLOT
REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BOD
Y
.
5. LEAD
FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6.
∅
P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5
°
TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION
A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X
b2
c
F
2.655
19.80
3.81
—
20.80
4.32
b4
3X
b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO
−
247
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