onsemi-NGTB50N60L2WG
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NGTB50N60L2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
•
Extremely Efficient Trench with Field Stop Technology
•
T
= 175
°
C
Jmax
50 A, 600 V
•
Soft Fast Reverse Recovery Diode
•
Optimized for High Speed Switching
•
5
m
s Short−Circuit Capability
•
These are Pb−Free Devices
V
CEsat
= 1.50 V
E
OFF
= 0.6 mJ
C
Typical Applications
•
Motor Drive Inverters
•
Industrial Switching
•
Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
V
CES
I
C
Value
Unit
V
Collector−emitter voltage
600
Collector current
@ T
C
= 25
°
C
A
100
50
@ T
C
= 100
°
C
Diode Forward Current
@ T
C
= 25
°
C
I
F
A
G
TO−247
CASE 340AL
100
50
C
@ T
C
= 100
°
C
E
Diode Pulsed Current
I
200
200
5
A
A
FM
T
Limited by T
Max
PULSE
J
MARKING DIAGRAM
Pulsed collector current, T
I
pulse
CM
limited by T
Jmax
Short−circuit withstand time
= 15
V
, V
=
4
00
V
,
t
m
s
SC
V
GE
CE
T
≤
+150
°
C
J
Gate−emitter voltage
V
GE
$
20
$
30
V
V
50N60L2
AYWWG
Transient gate−emitter voltage
(T
PULSE
= 5
m
s, D < 0.10)
Power Dissipation
P
D
W
@ T
C
= 25
°
C
@ T
C
= 100
°
C
500
250
Operating junction temperature
range
T
−55 to +175
°
C
J
A
Y
WW
G
= Assembly Location
=
Y
e
ar
= Work Week
Storage temperature range
T
stg
−55 to +175
260
°
C
°
C
= Pb−Free Package
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NGTB50N60L2WG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
July, 2015 − Rev. 4
NGTB50N60L2W/D
NGTB50N60L2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.62
40
Unit
°
C/W
°
C/W
°
C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0
V
, I
=
5
00
m
A
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15
V
, I
=
5
0 A
V
CEsat
1.30
−
1.50
1.85
1.80
−
GE
C
V
GE
= 15
V
, I
=
5
0 A, T
= 175
°
C
C J
Gate−emitter threshold voltage
V
V
= V
, I
= 350
m
A
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0
V
, V
=
6
00 V
I
−
−
−
1.0
0.1
4.0
mA
GE
CE
CES
V
GE
= 0
V
, V
=
6
00
V
, T
1
75
°
C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V
= 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
7500
300
190
310
60
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20
V
, V
= 0 V, f = 1
M
Hz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480
V
, I
=
5
0 A, V
= 15 V
ge
gc
C
GE
Q
150
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
110
48
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
270
70
T =
25
°
C
d(off)
J
V
= 400
V
, I
=
5
0 A
CC
C
Fall time
t
f
R =
10
W
g
Turn−on switching loss
Turn−off switching loss
T
o
tal switching loss
Turn−on delay time
Rise time
V
= 0 V/ 15 V
E
E
1.25
0.6
1.85
115
50
mJ
ns
GE
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
280
100
1.6
1.0
2.6
T =
150
°
C
d(off)
J
V
= 400
V
, I
=
5
0 A
CC
C
Fall time
t
f
R =
10
W
g
Turn−on switching loss
Turn−off switching loss
T
o
tal switching loss
V
= 0 V/ 15 V
E
E
mJ
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0
V
, I
=
5
0 A
V
F
1.40
−
1.70
2.40
2.50
−
V
GE
F
V
GE
= 0
V
, I
=
5
0 A, T
= 175
°
C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
67
0.30
7.4
−
−
−
−
−
−
ns
m
C
A
rr
T =
25
°
C
J
Q
I =
50 A, V
= 200 V
rr
F
R
di /dt
= 200 A/
m
s
F
I
rrm
t
rr
143
1.40
15
ns
m
C
A
T =
175
°
C
J
Q
I =
50 A, V
= 400 V
rr
F
R
di /dt
= 200 A/
m
s
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
V
= 20 V
to 15 V
V
= 20 V
to 13 V
GE
GE
T =
25
°
C
J
13 V
160
140
120
100
80
T =
150
°
C
J
11 V
11 V
10 V
9 V
10 V
9 V
60
60
40
40
8 V
7 V
8 V
7 V
20
0
20
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
200
180
160
140
120
100
80
V
GE
= 20 V
to 13 V
T =
−55
°
C
J
140
120
100
80
11 V
10 V
60
60
40
T =
150
°
C
J
7 V
40
9 V
8 V
20
0
20
0
T =
25
°
C
J
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11
12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
2.50
2.00
1.50
1.00
100,000
10,000
1000
T =
25
°
C
J
I
C
= 75 A
C
ies
I
C
= 50 A
I
C
= 25 A
C
oes
100
C
res
0.50
0
10
1
−75 −50 −25
0
25 50 75
100 125 150 175 200
10 20 30
40 50
60 70 80 90
100
T , JUNCTION TEMPERATURE (
°
C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
3
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
70
60
16
14
12
10
8
V
CE
= 400 V
50
40
30
20
6
4
T =
150
°
C
J
V
CE
= 400 V
= 15 V
= 50 A
10
0
V
I
2
0
GE
T =
25
°
C
J
C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300 350
V , FORWARD VOLTAGE (V)
F
Q ,
GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
10
E
E
on
t
t
d(off)
d(on)
t
f
off
t
r
V
V
I
= 400 V
= 15 V
= 50 A
V
V
I
= 400 V
= 15 V
= 50 A
CE
CE
GE
GE
C
C
0.2
0
Rg = 10
W
Rg = 10
W
120 140
T , JUNCTION TEMPERATURE (
°
C)
0
20
40
60
80
100
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (
°
C)
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3.5
3.0
2.5
1000
V
V
= 400 V
= 15 V
CE
GE
E
E
t
on
d(off)
T =
150
°
C
J
Rg = 10
W
t
f
2.0
1.5
1.0
100
off
t
d(on)
t
r
V
V
= 400 V
= 15 V
CE
GE
0.5
0
T =
150
°
C
Rg = 10
W
J
10
5
15
25
35
45
55
65
75
85
95
5
15
25
35
45
55
65
75
85
95
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
4
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
10,000
8
7
V
V
= 400 V
= 15 V
CE
V
V
= 400 V
= 15 V
CE
GE
GE
T =
150
°
C
J
t
T =
150
°
C
d(off)
J
6
5
4
3
2
I
C
= 50 A
I
C
= 50 A
E
E
on
1000
t
d(on)
off
100
10
t
f
t
r
1
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (
W
)
Rg, GATE RESISTOR (
W
)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
3.0
2.5
2.0
1.5
1000
V
= 15 V
GE
E
T =
150
°
C
on
t
J
d(off)
I
C
= 50 A
Rg = 10
W
t
d(on)
t
f
100
E
off
t
r
1.0
0.5
0
V
= 15 V
GE
T =
150
°
C
J
I
C
= 50 A
Rg = 10
W
150 200
250 300 350 400 450 500 550
600
, COLLECTOR−EMITTER VOLTAGE (V)
10
150 200
250 300 350 400 450 500 550 600
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
Figure 15. Switching Loss vs. V
CE
Figure 16. Switching Time vs. V
CE
1000
100
10
1000
100
50
m
s
100
m
s
1 ms
dc operation
1
0.1
Single Nonrepetitive
10
1
Pulse T
= 25
°
C
C
Curves must be derated
linearly with increase
in temperature
V
GE
= 15
V
, T
=
1
25
°
C
C
0.01
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
5
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
160
140
120
100
80
2.5
2.0
1.5
1.0
T =
175
°
C, I
= 50 A
J
F
T =
175
°
C, I
= 50 A
J
F
T =
25
°
C, I
= 50 A
J
F
T =
25
°
C, I
= 50 A
J F
0.5
0
60
40
100
300
500
700
900
1100
1300
100
300
500
700
900
1100 1300
di /dt,
DIODE CURRENT SLOPE (A/
m
)
F
di /dt,
DIODE CURRENT SLOPE (A/
m
)
F
Figure 19. t
rr
vs. di
F
/dt (V
R
= 400 V)
Figure 20. Q
rr
vs. di
F
/dt (V
R
= 400 V)
50
40
30
20
3.5
3.0
2.5
2.0
T =
175
°
C, I
= 50 A
J
F
I =
75 A
F
I =
50 A
F
T =
25
°
C, I
= 50 A
J
F
I =
25 A
F
10
0
1.5
1.0
100
300
500
700
900
1100
1300
−75 −50 −25
0
25 50 75
100 125 150
175 200
di /dt,
DIODE CURRENT SLOPE (A/
m
)
F
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 21. I
rm
vs. di
F
/dt (V
R
= 400 V)
Figure 22. V
F
vs. T
J
6
NGTB50N60L2WG
TYPICAL CHARACTERISTICS
1
0.1
R
= 0.282
q
JC
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (
°
C/W) C
(J/
°
C)
i
i
0.026955 0.003710
0.024252 0.013039
0.022476 0.044492
0.055395 0.057085
0.112157 0.089161
0.040934 0.772537
0.01
2%
n
0.001
Duty Factor = t
/t
1
2
Peak T
= P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 23. IGBT Transient Thermal Impedance
1
R
= 0.622
50% Duty Cycle
q
JC
20%
10%
5%
R (
°
C/W) C
(J/
°
C)
i
i
0.1
0.007983 0.000125
0.010584 0.000945
0.011330 0.002791
R
C
R
C
R
Junction
Case
1
1
2
n
2%
0.026752
0.047379
0.103276
0.061288
0.065591
0.134666
0.152791
0.003738
0.006674
0.009683
0.051597
0.152460
0.234823
0.654488
0.01
C
Single Pulse
2
n
Duty Factor = t
/t
1
2
Peak T
= P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. SLOT
REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BOD
Y
.
5. LEAD
FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6.
∅
P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5
°
TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION
A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X
b2
c
F
2.655
19.80
3.81
—
20.80
4.32
b4
3X
b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO
−
247
PAGE 1 OF 1
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