onsemi-NGTB50N60SWG
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NGTB50N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
50 A, 600 V
Features
V
CEsat
= 2.4 V
•
Low Saturation
V
o
ltage using Trench with Fieldstop Technology
•
Low Switching Loss Reduces System Power Dissipation
•
Low Gate Charge
•
Soft, Fast Free Wheeling Diode
•
This is a Pb−Free Device
E
off
= 0.60 mJ
C
Typical Applications
•
Inductive Heating
•
Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
V
CES
I
C
600
V
A
Collector current
@ T
C
= 25
°
C
100
50
@ T
C
= 100
°
C
G
TO−247
CASE 340AL
Pulsed collector current, T
I
CM
I
F
200
A
A
C
pulse
E
limited by T
Jmax
Diode forward current
@ T
C
= 25
°
C
100
50
@ T
C
= 100
°
C
MARKING DIAGRAM
Diode pulsed current, T
limited
I
FM
200
A
pulse
by T
Jmax
Gate−emitter voltage
V
GE
P
D
$
20
V
Power Dissipation
W
@ T
C
= 25
°
C
@ T
C
= 100
°
C
50N60SW
AYWWG
Operating junction temperature
range
T
J
−55 to +150
°
C
Storage temperature range
T
−55 to +150
260
°
C
°
C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
=
Y
e
ar
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60SWG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2016 − Rev. 1
NGTB50N60SW/D
NGTB50N60SWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.87
1.46
40
Unit
°
C/W
°
C/W
°
C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
=
0 V, I
= 500
m
A
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15
V
, I
=
5
0 A
V
CEsat
−
−
2.4
2.6
2.6
−
GE
C
V
GE
= 15
V
, I
=
5
0 A, T
= 150
°
C
C J
Gate−emitter threshold voltage
V
V
= V
, I
= 150
m
A
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0
V
, V
=
6
00 V
I
−
−
−
−
0.2
2
mA
GE
CE
CES
V
GE
= 0
V
, V
=
6
00
V
, T
1
50
°
C
CE J
=
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V
= 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
3100
120
80
−
−
−
ies
Output capacitance
C
oes
V
= 20
V
, V
= 0 V, f = 1
M
Hz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
135
27
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480
V
, I
=
5
0 A, V
= 15 V
ge
gc
C
GE
Q
67
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
70
32
d(on)
t
r
T =
25
°
C
J
V
= 400
V
, I
=
5
0 A
CC
C
Turn−off delay time
t
144
66
d(off)
R =
10
W
g
V
= 0 V/ 15V
Fall time
t
f
GE
Turn−off switching loss
Turn−on delay time
Rise time
E
0.60
70
mJ
ns
off
t
t
d(on)
t
36
r
T =
150
°
C
J
V
= 400
V
, I
=
5
0 A
CC
C
Turn−off delay time
150
85
d(off)
R =
10
W
g
V
= 0 V/ 15V
Fall time
t
GE
f
Turn−off switching loss
DIODE CHARACTERISTIC
E
1.11
mJ
V
off
Forward voltage
V
GE
= 0
V
, I
=
2
5 A
V
F
1.2
1.5
F
V
GE
= 0
V
, I
=
2
5 A, T
= 150
°
C
1.11
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
T =
25
°
C
t
376
4145
22
ns
nc
A
J
rr
I =
25 A, V
= 200 V
F
R
Q
rr
di /dt
= 200 A/
m
s
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NGTB50N60SWG
TYPICAL CHARACTERISTICS
140
120
100
80
140
T =
25
°
C
T =
150
°
C
J
J
V
GE
= 17 V to 15 V
120
100
80
60
40
20
0
13 V
V
= 17 V
to 13 V
GE
11 V
10 V
60
11 V
10 V
40
9 V
20
9 V
7 V to 8 V
8 V
7 V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
120
100
80
160
140
120
100
80
T =
−55
°
C
J
V
= 17 V
to 13 V
GE
T =
25
°
C
J
T =
150
°
C
J
60
11 V
10 V
60
40
40
20
20
9 V
7 V to 8 V
0
0
0
1
2
3
4
5
6
7
8
0
4
8
12
16
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0
10000
1000
100
C
ies
I
= 80 A
C
I
C
= 40 A
I
C
= 20 A
C
oes
I
= 5 A
C
C
res
10
−75
−25
25
75
125
175
0
10 20
30 40
50 60 70
80 90
100
T , JUNCTION TEMPERATURE (
°
C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
3
NGTB50N60SWG
TYPICAL CHARACTERISTICS
20
15
120
100
80
60
40
20
0
T =
25
°
C
J
V
= 480 V
CE
T =
150
°
C
J
10
5
0
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
Q ,
GATE CHARGE (nC)
G
V , FORWARD VOLTAGE (V)
F
Figure 8. Typical Gate Charge
Figure 7. Diode Forward Characteristics
1000
100
10
1.2
1
V
V
= 400 V
= 15 V
= 50 A
CE
GE
I
C
t
d(off)
R =
10
W
g
0.8
0.6
0.4
0.2
0
t
f
t
d(on)
t
r
V
V
= 400 V
= 15 V
= 50 A
CE
GE
I
C
R =
10
W
g
1
0
20
40
60
80
100 120
140 160
0
20
40
60
80
100
120 140
160
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
2.5
2
1000
100
10
V
V
= 400 V
= 15 V
CE
GE
T =
150
°
C
R =
10
W
t
J
f
t
d(off)
g
t
d(on)
1.5
1
t
r
V
CE
= 400 V
= 15 V
V
0.5
0
GE
T =
150
°
C
R =
10
W
J
g
1
4
16
28
40
52
64
76
88
4
20
32
44
56
68
80
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. Current
4
NGTB50N60SWG
TYPICAL CHARACTERISTICS
1000
1.6
1.4
1.2
1
V
V
= 400 V
= 15 V
= 50 A
CE
GE
I
C
t
d(off)
T =
150
°
C
J
t
f
100
10
1
t
d(on)
0.8
0.6
0.4
0.2
0
t
r
V
V
= 400 V
= 15 V
CE
GE
I
C
= 50 A
T =
150
°
C
J
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
R ,
GATE RESISTOR (
W
)
G
R ,
GATE RESISTOR (
W
)
G
Figure 14. Switching Time vs. R
G
Figure 13. Switching Loss vs. R
G
1.4
1.2
1
1000
100
10
t
d(off)
t
f
t
0.8
0.6
0.4
0.2
0
d(on)
t
r
V
I
R
= 15 V
= 50 A
= 10
W
V
I
R
= 15 V
= 50 A
= 10
W
T =
150
°
C
GE
GE
C
C
G
G
T =
150
°
C
J
J
1
175
175
225
275 325
375
425 475
525 575
225
V
275 325
375
425 475
525 575
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 15. Switching Loss vs. V
CE
Figure 16. Switching Time vs. V
CE
1000
100
10
1000
50
m
s
100
m
s
100
10
1
1 ms
dc operation
1
Single Nonrepetitive
Pulse T
= 25
°
C
C
0.1
0.01
Curves must be derated
linearly with increase
in temperature
V
GE
= 15
V
, T
=
1
25
°
C
C
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
5
NGTB50N60SWG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.87
q
JC
20%
10%
R (
°
C/W)
t
(sec)
i
i
5%
2%
0.04077
0.09054
0.16141
0.21558
0.24842
1.0E−4
5.48E−5
0.002
0.03
R
C
R
C
R
n
Junction
Case
1
1
2
2
C =
t
/R
i
i
i
0.01
0.001
0.1
1%
0.11759
2.0
C
n
Single Pulse
Duty Factor = t
/t
1
2
Peak T
= P
x Z
+ T
JC
q
J
DM
C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
1
R
= 1.46
q
JC
50% Duty Cycle
20%
10%
R (
°
C/W)
t
(sec)
R
C
R
C
R
n
i
i
Junction
C =
t
/R
Case
1
1
2
2
0.1
5%
2%
0.18019
0.37276
0.45472
0.33236
0.11759
1.48E−4
0.002
0.03
0.1
i
i
i
1%
0.01
0.001
2.0
C
n
Duty Factor = t
/t
1
2
Single Pulse
0.00001
Peak T
= P
x Z
+ T
JC C
q
J
DM
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. SLOT
REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BOD
Y
.
5. LEAD
FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6.
∅
P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5
°
TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION
A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X
b2
c
F
2.655
19.80
3.81
—
20.80
4.32
b4
3X
b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO
−
247
PAGE 1 OF 1
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