onsemi-NGTD20T120F2WP
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NGTD20T120F2
IGBT Die
Trench Field Stop II IGBT Die for motor drive and inverter
applications.
Features
•
Extremely Efficient Trench with Field Stop Technology
•
Low V
Loss Reduces System Power Dissipation
CE(sat)
Typical Applications
•
Industrial Motor Drives
•
Solar Inverters
•
UPS Systems
V
RCE
= 1200 V
I
C
= Limited by T
J(max)
•
Welding
MAXIMUM RATINGS
IGBT DIE
Parameter
Symbol
Value
1200
Unit
V
C
Collector−Emitter Voltage, T
= 25
°
C
V
CE
J
DC Collector Current, limited by
I
C
A
T
J(max)
Gate−Emitter Voltage
I
100
20
A
V
C, pulse
G
V
GE
Maximum Junction
T
e
mperature
Short Circuit Withstand Time,
T
−55 to +175
10
°
C
m
s
J
E
T
SC
V
GE
= 15
V
, V
=
5
00
V
, T
≤
150
°
C
CE J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DIE OUTLINE
1. Depending
on thermal properties of assembly.
2. T
limited by T
, 10
m
s pulse, V
= 15
V
.
jmax GE
pulse
MECHANICAL DATA
Parameter
Die Size
Value
5129 x 3695
See die layout
400 x 670
5
Unit
2
m
m
2
Emitter Pad Size
Gate Pad Size
m
m
2
m
m
Die Thickness
mils
mm
Wafer Size
150
T
o
p Metal
5
m
m AlSi
Back Metal
2
m
m TiNiAg
766
Max possible chips per wafer
Passivation frontside
Reject ink dot size
Oxide−Nitride
25 mils
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28
°
C,
30−65%RH
Type: Bare
Wafer in Jar
Storage time:
< 36 months
Type: Die on
tape in
ring−pack
Storage time:
< 3 months
ORDERING INFORMATION
Device
NGTD20T120F2WP
NGTD20T120F2SWK
Inking?
Shipping
Y
e
s
Y
e
s
Bare Wafer in Jar
Sawn Wafer on
T
a
pe
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
NGTD20T120F2WP/D
March, 2016 − Rev. 0
NGTD20T120F2
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise specified)
J
Parameter
STATIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector−Emitter Cutoff Current
Gate Leakage Current
Test Conditions
Symbol
Min
1200
4.5
Typ
Max
Units
V
= 0
V
, I
=
5
00
m
A
V
(BR)CES
V
V
GE
C
V
= 15
V
, I
=
2
0 A
V
2.0
5.5
2.4
6.5
0.4
200
GE
C
CE(sat)
GE(TH)
V
= V
, I
= 400
m
A
V
V
GE
CE
C
V
GE
= 0
V
, V
=
1
200 V
I
mA
nA
CE
CES
V
= 20
V
, V
= 0 V
I
GE
CE
GES
DYNAMIC CHARACTERISTICS
Input Capacitance
C
4420
151
81
pF
pF
pF
ies
V
CE
= 20
V
, V
= 0 V, f = 1
GE
Output Capacitance
C
oes
MHz
Reverse Transfer Capacitance
C
res
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
E
G
E
E = Emitter pad
G = Gate pad
All dimensions in
m
m
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
2
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:
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