onsemi-NGTD23T120F2WP
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NGTD23T120F2
IGBT Die
Trench Field Stop II IGBT Die for motor drive and inverter
applications.
Features
•
Extremely Efficient Trench with Field Stop Technology
•
Low V
Loss Reduces System Power Dissipation
CE(sat)
Typical Applications
•
Industrial Motor Drives
•
Solar Inverters
•
UPS Systems
V
RCE
= 1200 V
I
C
= Limited by T
J(max)
•
Welding
MAXIMUM RATINGS
IGBT DIE
Parameter
Symbol
Value
1200
Unit
V
C
Collector−Emitter Voltage, T
= 25
°
C
V
CE
J
DC Collector Current, limited by
I
C
A
T
J(max)
Gate−Emitter Voltage
I
120
20
A
V
C, pulse
G
V
GE
Maximum Junction
T
e
mperature
Short Circuit Withstand Time,
T
−55 to +175
10
°
C
m
s
J
E
T
SC
V
GE
= 15
V
, V
=
5
00
V
, T
≤
150
°
C
CE J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DIE OUTLINE
1. Depending
on thermal properties of assembly.
2. T
limited by T
, 10
m
s pulse, V
= 15
V
.
jmax GE
pulse
MECHANICAL DATA
Parameter
Die Size
Value
5375 x 4175
See die layout
405 x 660
5
Unit
2
m
m
2
Emitter Pad Size
Gate Pad Size
m
m
2
m
m
Die Thickness
mils
mm
Wafer Size
150
T
o
p Metal
5
m
m AlSi
Back Metal
2
m
m TiNiAg
546
Max possible chips per wafer
Passivation frontside
Reject ink dot size
Oxide−Nitride
25 mils
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28
°
C,
30−65%RH
Type: Bare
Wafer in Jar
Storage time:
< 36 months
Type: Die on
tape in
ring−pack
Storage time:
< 3 months
ORDERING INFORMATION
Device
NGTD23T120F2WP
NGTD23T120F2SWK
Inking?
Shipping
Y
e
s
Y
e
s
Bare Wafer in Jar
Sawn Wafer on
T
a
pe
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
NGTD23T120F2WP/D
March, 2016 − Rev. 0
NGTD23T120F2
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise specified)
J
Parameter
STATIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector−Emitter Cutoff Current
Gate Leakage Current
Test Conditions
Symbol
Min
1200
4.5
Typ
Max
Units
V
= 0
V
, I
=
5
00
m
A
V
(BR)CES
V
V
GE
C
V
= 15
V
, I
=
2
5 A
V
1.9
5.5
2.2
6.5
1.0
200
GE
C
CE(sat)
GE(TH)
V
= V
, I
= 400
m
A
V
V
GE
CE
C
V
GE
= 0
V
, V
=
1
200 V
I
mA
nA
CE
CES
V
= 20
V
, V
= 0 V
I
GE
CE
GES
DYNAMIC CHARACTERISTICS
Input Capacitance
C
5250
170
pF
pF
pF
ies
V
CE
= 20
V
, V
= 0 V, f = 1
GE
Output Capacitance
C
oes
MHz
Reverse Transfer Capacitance
C
100
res
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
E
G
E
E = Emitter pad
G = Gate pad
All dimensions in
m
m
2
NGTD23T120F2
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf.
SCILLC reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800−282−9855
T
o
ll Free
USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NGTD23T120F2WP/D
