onsemi-NJT4030PT1G
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NJT4030
P
,
N
JV4030P
Bipolar Power
T
r
ansistors
PNP Silicon
Features
•
Epoxy Meets UL 94, V
−
0 @ 0.125 in
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
COLLECTOR 2,4
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
BASE
1
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
V
40
CB
EB
EMITTER 3
V
6.0
1.0
3.0
5.0
3B
MARKING
DIAGRAM
Base Current
−
Continuous
Collector Current
−
Continuous
Collector Current
−
Peak
ESD
−
Human Body Model
ESD
−
Machine Model
I
B
C
I
4
SOT
−
223
CASE 318E
STYLE 1
I
AYW
CM
1
4030P
G
2
HBM
MM
3
G
C
V
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
W
= Assembly Location
Y
e
ar
= Work Week
4030P =
Specific Device Code
THERMAL CHARACTERISTICS
G
= Pb
−
Free Package
Characteristic
Symbol
Max
Unit
(Note: Microdot may be in either location)
T
o
tal Power Dissipation
P
D
W
2.0
0.80
D
A
ORDERING INFORMATION
D
A
Thermal Resistance, Junction
−
to
−
Case
°
C/W
†
Device
Package
Shipping
R
64
q
q
JA
JA
155
R
NJT4030PT1G
NJV4030PT1G
SOT
−
223
(Pb
−
Free)
1000 /
T
a
pe &
Reel
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8” from case for 5 seconds
T
260
°
C
°
C
L
NJT4030PT3G
NJV4030PT3G
SOT
−
223
(Pb
−
Free)
4000 /
T
a
pe &
Reel
Operating and Storage Junction
T
e
mperature Range
T , T
J
−
55 to
+
1
50
stg
1. Mounted
on 1” sq. (645 sq. mm) Collector pad on FR
−
4 bd material.
2. Mounted
on 0.012” sq. (7.6 sq. mm) Collector pad on FR
−
4 bd material.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2018
−
Rev. 6
NJT4030P/D
NJT4030
P
,
N
JV4030P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
V
Vdc
Vdc
CEO(sus)
(I =
10 mAdc, I
= 0 Adc)
40
6.0
−
−
−
−
−
−
C
B
Emitter
−
Base Voltage
(I =
50
m
Adc, I
= 0 Adc)
V
EBO
−
E
C
Collector Cutoff Current
I
nAdc
nAdc
CBO
(V =
40 Vdc)
100
100
CB
Emitter Cutoff Current
I
EBO
(V =
6.0 Vdc)
−
BE
Collector
−
Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I =
0.5 Adc, I
= 5.0 mAdc)
−
−
−
−
−
−
0.150
0.200
0.500
C
B
(I =
1.0 Adc, I
= 10 mAdc)
C
B
(I =
3.0 Adc, I
= 0.3 Adc)
C
B
Base
−
Emitter Saturation Voltage
(I =
1.0 Adc, I
= 0.1 Adc)
Vdc
Vdc
−
BE(sat)
−
−
−
−
1.0
1.0
C
B
Base
−
Emitter On Voltage
V
BE(on)
(I =
1.0 Adc, V
= 2.0 Vdc)
C
CE
DC Current Gain
h
FE
(I =
0.5 Adc, V
= 1.0 Vdc)
220
200
100
−
−
−
−
400
−
C
CE
(I =
1.0 Adc, V
= 1.0 Vdc)
C
CE
(I =
3.0 Adc, V
= 1.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
pF
ob
(V =
10 Vdc, f = 1.0 MHz)
−
−
−
40
−
−
−
CB
Input Capacitance
C
ib
(V =
5.0 Vdc, f = 1.0 MHz)
130
EB
f
T
MHz
(I =
500 mA, V
= 10
V
, F
=
1
.0 MHz)
160
C
CE
test
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
4. f =
|h |
•
f
test
T
FE
2.5
2.0
1.5
1.0
T
C
T
A
0.5
0
25
50
75
100
125
150
T , TEMPERATURE (
°
C)
J
Figure 1. Power Derating
2
NJT4030
P
,
N
JV4030P
TYPICAL CHARACTERISTICS
600
500
400
300
200
700
V
CE
= 4 V
V
CE
= 1 V
150
°
C
600
500
400
300
200
150
°
C
25
°
C
25
°
C
−
40
°
C
−
40
°
C
100
0
100
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I
= 10
C
B
I /I
= 50
150
°
C
C
B
150
°
C
25
°
C
−
40
°
C
0.1
25
°
C
−
40
°
C
0.1
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 4. Collector
−
Emitter Saturation Voltage
Figure 5. Collector
−
Emitter Saturation Voltage
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
= 2 V
I
C
= 2 A
−
40
°
C
25
°
C
1 A
0.1
0.5 A
0.1 A
150
°
C
0.1
0
0.01
1.0E
−
04 1.0E
−
03
1.0E
−
02
1.0E
−
01
1.0E+00
0.001
0.01
0.1
1
I ,
BASE CURRENT (A)
B
I ,
COLLECTOR CURRENT (A)
C
Figure 6. Collector Saturation Region
Figure 7. V
BE(on)
Voltage
3
NJT4030
P
,
N
JV4030P
TYPICAL CHARACTERISTICS
1.2
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I
= 10
I /I
= 50
C B
C
B
−
40
°
C
25
°
C
−
40
°
C
25
°
C
150
°
C
150
°
C
0.1
0
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 8. Base
−
Emitter Saturation Voltage
Figure 9. Base
−
Emitter Saturation Voltage
350
100
80
T =
25
°
C
test
J
T =
25
°
C
test
J
f
= 1 MHz
300
250
200
150
100
f
= 1 MHz
60
40
20
0
50
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
200
10
1
T =
25
°
C
test
J
180
160
140
120
100
80
0.5 ms
f
= 1 MHz
V
CE
= 10 V
1 ms
10 ms
100 ms
0.1
60
40
20
0
0.01
0.001
0.01
0.1
1
1
10
, COLLECTOR
−
EMITTER VOLTAGE (V)
CE
100
I ,
COLLECTOR CURRENT (A)
V
C
Figure 12. Current
−
Gain Bandwidth Product
Figure 13. Safe Operating Area
4
NJT4030
P
,
N
JV4030P
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
q
q
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5
NJT4030
P
,
N
JV4030P
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NJT4030P/D
