onsemi-NJV4031NT3G
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NJT4031N,
NJV4031NT1G,
NJV4031NT3G
Bipolar Power
T
r
ansistors
NPN Silicon
Features
•
Epoxy Meets UL 94, V
−
0 @ 0.125 in
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR 2,4
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
BASE
1
C
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
EMITTER 3
V
CEO
MARKING
DIAGRAM
V
CB
40
4
V
EB
6.0
1
2
Base Current
−
Continuous
Collector Current
−
Continuous
Collector Current
−
Peak
ESD
−
Human Body Model
ESD
−
Machine Model
I
B
1.0
3.0
5.0
3B
C
Adc
Adc
Adc
V
3
AYW
SOT
−
223
CASE 318E
STYLE 1
4031N
G
I
C
1
I
CM
HBM
MM
A
Y
W
= Assembly Location
Y
e
ar
= Work Week
V
4031N =
Specific Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G
= Pb
−
Free Package
ORDERING INFORMATION
THERMAL CHARACTERISTICS
†
Device
Package
Shipping
Characteristic
Symbol
Max
Unit
NJT4031NT1G
NJV4031NT1G
SOT
−
223
(Pb
−
Free)
1000 /
T
a
pe &
Reel
T
o
tal Power Dissipation
P
D
W
2.0
0.80
D
D
A
A
NJT4031NT3G
NJV4031NT3G
SOT
−
223
(Pb
−
Free)
4000 /
T
a
pe &
Reel
Thermal Resistance, Junction
−
to
−
Case
°
C/W
R
R
64
155
q
q
JA
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8” from case for 5 seconds
T
L
260
°
C
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−
55 to
+
1
50
J
stg
1. Mounted
on 1” sq. (645 sq. mm) Collector pad on FR
−
4 bd material.
2. Mounted
on 0.012” sq. (7.6 sq. mm) Collector pad on FR
−
4 bd material.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013
−
Rev. 4
NJT4031N/D
NJT4031N, NJV4031NT1G, NJV4031NT3G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
(I =
10 mAdc, I
= 0 Adc)
V
Vdc
Vdc
CEO(sus)
40
6.0
−
−
−
−
−
−
C
B
Emitter
−
Base Voltage
(I =
50
m
Adc, I
= 0 Adc)
V
EBO
−
E
C
Collector Cutoff Current
I
nAdc
nAdc
CBO
(V =
40 Vdc)
100
100
CB
Emitter Cutoff Current
I
EBO
(V =
6.0 Vdc)
−
BE
Collector
−
Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I =
0.5 Adc, I
= 5.0 mAdc)
−
−
−
−
−
−
0.100
0.150
0.300
C
B
(I =
1.0 Adc, I
= 10 mAdc)
C
B
(I =
3.0 Adc, I
= 0.3 Adc)
C
B
Base
−
Emitter Saturation Voltage
(I =
1.0 Adc, I
= 0.1 Adc)
Vdc
Vdc
BE(sat)
−
−
−
−
1.0
1.0
C
B
Base
−
Emitter On Voltage
V
BE(on)
(I =
1.0 Adc, V
= 2.0 Vdc)
C
CE
DC Current Gain
h
FE
(I =
0.5 Adc, V
= 1.0 Vdc)
220
200
100
−
−
−
C
CE
(I =
1.0 Adc, V
= 1.0 Vdc)
500
C
CE
CE
(I =
3.0 Adc, V
= 1.0 Vdc)
C
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
pF
ob
(V =
10 Vdc, f = 1.0 MHz)
−
−
−
25
−
−
−
CB
Input Capacitance
C
ib
(V =
5.0 Vdc, f = 1.0 MHz)
170
215
EB
f
T
MHz
(I =
500 mA, V
= 10
V
, F
=
1
.0 MHz)
C
CE
test
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
4. f =
|h |
•
f
T
FE
test
2.5
2.0
1.5
1.0
T
C
T
A
0.5
0
25
50
75
100
125
150
T , TEMPERATURE (
°
C)
J
Figure 1. Power Derating
2
NJT4031N, NJV4031NT1G, NJV4031NT3G
TYPICAL CHARACTERISTICS
600
500
400
300
200
700
V
CE
= 4 V
V
CE
= 1 V
150
°
C
600
500
400
300
200
150
°
C
25
°
C
25
°
C
−
55
°
C
−
55
°
C
100
0
100
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I
= 10
C
B
I /I
= 50
C
150
°
C
B
150
°
C
25
°
C
0.1
−
55
°
C
25
°
C
0.1
−
55
°
C
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 4. Collector
−
Emitter Saturation Voltage
Figure 5. Collector
−
Emitter Saturation Voltage
1
1.2
1.0
0.8
0.6
0.4
V
= 2 V
CE
−
55
°
C
I
C
= 3 A
2 A
0.1
25
°
C
1 A
0.5 A
150
°
C
0.2
0
0.1 A
0.01
0.0001
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1
I ,
BASE CURRENT (A)
B
I ,
COLLECTOR CURRENT (A)
C
Figure 6. Collector Saturation Region
Figure 7. V
BE(on)
Voltage
3
NJT4031N, NJV4031NT1G, NJV4031NT3G
TYPICAL CHARACTERISTICS
1.4
1.4
1.2
I /I
= 10
I /I
= 50
C B
C
B
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
−
55
°
C
−
55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 8. Base
−
Emitter Saturation Voltage
Figure 9. Base
−
Emitter Saturation Voltage
450
100
80
T =
25
°
C
J
J
400
350
300
250
200
150
100
f
= 1 MHz
f
test
60
40
20
0
50
0
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
240
200
160
120
80
10
1
T =
25
°
C
J
f
= 1 MHz
0.5 ms
test
V
CE
= 10 V
1 ms
10 ms
100 ms
0.1
40
0
0.01
0.001
0.01
0.1
1
10
1
10
, COLLECTOR
−
EMITTER VOLTAGE (V)
100
I ,
COLLECTOR CURRENT (A)
C
V
CE
Figure 12. Current
−
Gain Bandwidth Product
Figure 13. Safe Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
282
−
9855
T
o
ll Free USA/Canada
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