onsemi-NJVMJB41CT4G
| Part # | onsemi-NJVMJB41CT4G |
Download  | onsemi-NJVMJB41CT4G |
MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
D
2
PAK for Surface Mount
Features
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•
Electrically the Same as TIP41 and T1P42 Series
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
Pb
−
Free Packages are Available
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
2
D PAK
J4xCG
AYWW
CASE 418B
STYLE 1
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Symbol
Value
100
100
5.0
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
J4xC =
Specific Device Code
x = 1 or 2
V
CB
EB
A
Y
= Assembly
Location
=
Y
e
ar
V
WW =
Work Week
Collector Current
−
Continuous
−
Peak
I
C
6.0
10
G
= Pb
−
Free Package
Base Current
I
B
2.0
Adc
ORDERING INFORMATION
T
o
tal Power Dissipation
P
D
†
Device
Package
Shipping
@ T
= 25
_
C
C
65
0.52
W
W/
_
C
Derate above 25
_
C
2
MJB41CG
D PAK
50 Units / Rail
(Pb
−
Free)
T
o
tal Power Dissipation
P
D
@ T
= 25
_
C
A
2.0
W
2
MJB41CT4G
NJVMJB41CT4G
MJB42CG
D PAK
800 /
T
a
pe &
Reel
Derate above 25
_
C
0.016
W/
_
C
mJ
(Pb
−
Free)
E
62.5
2
D PAK
800 /
T
a
pe &
Reel
(Pb
−
Free)
Operating and Storage Junction
T
e
mperature Range
T , T
−
65 to +150
_
C
J
stg
2
D PAK
50 Units / Rail
(Pb
−
Free)
THERMAL CHARACTERISTICS
Characteristic
2
MJB42CT4G
NJVMJB42CT4G
D PAK
800 /
T
a
pe &
Reel
Symbol
Max
1.92
62.5
Unit
_
C/W
_
C/W
(Pb
−
Free)
Thermal Resistance, Junction
−
to
−
Case
R
q
JC
2
D PAK
800 /
T
a
pe &
Reel
Thermal Resistance,
R
q
JA
(Pb
−
Free)
Junction
−
to
−
Ambient
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance,
R
50
_
C/W
_
C
q
JA
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
260
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
= 2.5 A, L = 20 mH,
P
.
R.
F
. =
1
0 Hz, V
= 10
V
, R
=
1
00
W
C
CC
BE
2. When
surface mounted to an FR
−
4 board using the minimum recommended
pad size.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2013
−
Rev. 4
MJB41C/D
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
CEO(sus)
100
−
−
Vdc
mAdc
m
Adc
m
Adc
C
B
Collector Cutoff Current (V
= 60 Vdc, I
= 0)
I
CEO
0.7
100
50
CE
B
Collector Cutoff Current (V
= 100 Vdc, V
= 0)
I
−
CE
EB
CES
EBO
Emitter Cutoff Current (V
= 5.0 Vdc, I
= 0)
I
−
BE
C
DC Current Gain
(I =
0.3 Adc, V
= 4.0 Vdc)
h
FE
30
15
−
75
−
C
CE
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage (I
= 6.0 Adc, I
= 600 mAdc)
V
CE(sat)
−
−
1.5
2.0
Vdc
Vdc
C
B
Base
−
Emitter On Voltage (I
= 6.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product (I
= 500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
f
T
3.0
20
−
−
MHz
C
CE
test
Small
−
Signal Current Gain (I
= 0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
−
C
CE
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
100
120
140
160
80
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
V
CC
+ꢂ30 V
2.0
1.0
T =
25
°
C
J
R
V
CC
I /I
= 10
= 30 V
25
m
s
C
0.7
0.5
SCOPE
+11 V
0
C B
R
B
0.3
0.2
t
r
-ꢂ9.0 V
D
1
t , t
≤
10 ns
0.1
0.07
0.05
r
f
DUTY CYCLE = 1.0%
t @
V
d
≈
5.0 V
-ꢂ4 V
BE(off)
R
and R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
0.03
0.02
D MUST
BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I
≈
100 mA
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
B
ꢃꢃMSD6100 USED BELOW I
≈
100 mA
B
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn
−
On Time
2
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
0.1
0.07
0.05
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
R
= 1.92
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
t
1
2
T
– T
= P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.05
0.01
0.01
0.02
1.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
0.5ꢁms
5.0
breakdown. Safe operating area curves indicate I
−
V
C
CE
1.0ꢁms
3.0
2.0
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
5.0ꢁms
1.0
0.5
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 150
_
C; T
is
J(pk)
C
THERMAL LIMITATION @ T
= 25
°
C
C
(SINGLE PULSE)
limits are valid for duty cycles to 10% provided T
J(pk)
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
v
150
_
C.
T
may be calculated from the data in
J(pk)
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
5.0
10
20
40
60
80 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active
−
Region Safe Operating Area
5.0
300
T =
25
°
C
J
3.0
2.0
T =
25
°
C
J
200
V
CC
I /I
= 10
= 30 V
C B
t
s
I =
I
B1 B2
1.0
C
C
ib
0.7
0.5
100
70
0.3
0.2
t
f
ob
50
0.1
0.07
0.05
30
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I ,
COLLECTOR CURRENT (AMP)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn
−
Off Time
Figure 7. Capacitance
3
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
500
2.0
T =
25
°
C
300
200
J
V
CE
= 2.0 V
1.6
1.2
0.8
0.4
0
T =
150
°
C
J
100
70
25
°
C
I
C
= 1.0 A
2.5 A
5.0 A
50
30
20
-ꢂ55
°
C
10
7.0
5.0
0.06 0.1
0.2 0.3
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
100
200 300
500
1000
I ,
COLLECTOR CURRENT (AMP)
C
I ,
BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
0.4
0
+ꢂ2.5
+ꢂ2.0
+ꢂ1.5
T =
25
°
C
J
*APPLIES FOR I
/I
≤
h /4
C B
FE
+ꢂ1.0
+ꢂ0.5
0
+ꢂ25
°
C to +ꢂ150
°
C
*ꢂ
q
FOR V
VC
CE(sat)
-ꢂ55
°
C to +ꢂ25
°
C
+ꢂ25
°
C to +ꢂ150
°
C
V
V
@ I
/I =
10
C B
BE(sat)
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
-ꢂ2.0
-ꢂ2.5
V
@ V
= 4.0 V
CE
BE
q
FOR V
BE
VB
-ꢂ55
°
C to +ꢂ25
°
C
@ I
/I =
10
C B
CE(sat)
0.06 0.1
0.2 0.3
0.4 0.6
1.0
2.0 3.0 4.0
6.0
0.06 0.1
0.2 0.3
0.5
1.0
2.0 3.0
4.0 6.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
10
10
10
10
10ꢁM
V
= 30 V
CE
V
CE
= 30 V
1.0ꢁM
100ꢁk
10ꢁk
I
= 10 x I
CES
C
T =
150
°
C
J
1
0
100
°
C
I
C
≈
I
CES
25
°
C
I
C
= I
CES
-1
I
= 2 x I
CES
C
10
10
10
1.0ꢁk
0.1ꢁk
-2
REVERSE
FORWARD
(TYPICAL I
VALUES
CES
OBTAINED FROM FIGURE 12)
-3
-ꢂ0.3 -ꢂ0.2
-ꢂ0.1
V
0
+ꢂ0.1 +ꢂ0.2 +ꢂ0.3 +ꢂ0.4 +ꢂ0.5 +ꢂ0.6
+ꢂ0.7
20
40
60
80
100
120
140
160
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
BE
J
Figure 12. Collector Cut
−
Off Region
Figure 13. Effects of Base
−
Emitter Resistance
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING
DIMENSION: INCH.
3. 418B
−
01 THRU 418B
−
03 OBSOLETE,
NEW STANDARD 418B
−
04.
E
V
W
−
B
−
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−
T
−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055
M
N
P
R
S
V
H
D
3 PL
M
M
T B
0.13 (0.005)
1.14
1.40
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W
−
W
VIEW W
−
W
VIEW W
−
W
1
2
3
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. ANODE
STYLE 6:
PIN 1.
NO CONNECT
2. CATHODE
PIN 1.
BASE
PIN 1.
GATE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. DRAIN
3. SOURCE
4. DRAIN
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. CATHODE
4. ANODE
3. ANODE
4. CATHODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
AYWW
xxxxxxxxG
AKA
xxxxxxxxG
AYWW
IC
Standard
Rectifier
xx
A
WL
Y
= Specific Device Code
= Assembly Location
= Wafer Lot
=
Y
e
ar
WW
G
AKA
= Work Week
= Pb
−
Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.
2
5
X
04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
