onsemi-NSS12200WT1G
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NSS12200WT1G
Low V
CE(sat)
T
r
ansistor
,
PNP, 12 V, 2.0 A, SOT-363
Package
2
ON Semiconductor’s
e PowerEdge
family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
12 VOLTS
2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
163 m
W
Typical application are DC
−
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
1, 2, 5, 6
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
3
BASE
Features
4
•
High Current Capability (3 A)
EMITTER
•
High Power Handling (Up to 650 mW)
•
Low V
(170 mV Typical @ 1 A)
CE(s)
•
Small Size
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
1
Compliant
SC
−
88/SOT
−
363
CASE 419B
STYLE 20
Benefits
•
High Specific Current and Power Capability Reduces Required PCB Area
•
Reduced Parasitic Losses Increases Battery Life
DEVICE MARKING
MAXIMUM RATINGS
(T =
25
°
C)
A
6
Rating
Symbol
Max
−
12
−
12
−
5.0
Unit
Vdc
Vdc
Vdc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
V2 M
G
1
Collector Current
−
Continuous
Collector Current
−
Peak
I
C
−
2.0
−
3.0
V2 = Specific Device Code
M =
Date Code
I
CM
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
G
= Pb
−
Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
NSS12200WT1G
Package
Shipping
SOT
−
363
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013
−
Rev. 2
NSS12200W/D
NSS12200WT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation
P
D
450
mW
T =
25
°
C
Derate above 25
°
C
A
3.6
mW/
°
C
°
C/W
Thermal Resistance,
R
275
q
JA
Junction
−
to
−
Ambient
T
o
tal Device Dissipation
P
650
mW
D
T =
25
°
C
A
Derate above 25
°
C
5.2
mW/
°
C
°
C/W
Thermal Resistance,
R
192
q
JA
Junction
−
to
−
Ambient
Thermal Resistance,
Junction
−
to
−
Lead 6
R
105
1.4
°
C/W
W
q
JL
T
o
tal Device Dissipation
(Single Pulse < 10 sec.)
P Single
D
Junction and Storage
T
e
mperature Range
T , T
−
55 to +150
°
C
J
stg
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage, (I
=
−
10 mAdc, I
= 0)
V
−
12
−
12
−
5.0
−
−
15
−
25
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collecto
r
−
Base Breakdown Voltage, (I
=
−
0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage, (I
=
−
0.1 mAdc, I
= 0)
−
7.0
−
Vdc
E
C
Collector Cutoff Current, (V
=
−
12 Vdc, I
= 0)
I
CBO
−
0.02
−
0.03
−
0.03
−
0.1
−
0.1
−
0.1
m
Adc
m
Adc
m
Adc
CB
E
Collector
−
Emitter Cutoff Current, (V
=
−
12 Vdc, I
= 0)
I
−
CES
E
CES
EBO
Emitter Cutoff Current, (V
=
−
5.0 Vdc, I
= 0)
I
−
EB
E
ON CHARACTERISTICS
h
FE
(I =
−
0.5 A, V
=
−
1.5 V)
100
100
100
180
165
160
−
300
−
C
CE
(I =
−
0.8 A, V
=
−
1.5 V)
C
CE
(I =
−
1.0 A, V
=
−
1.5 V)
C
CE
(I =
−
0.5 A, I
=
−
10 mA)
V
V
CE(sat)
−
−
−
−
0.10
−
0.14
−
0.17
−
0.160
−
0.235
−
0.290
C
B
(I =
−
0.8 A, I
=
−
16 mA)
C
B
(I =
−
1.0 A, I
=
−
20 mA)
C
B
(I =
−
1.0 A, I
=
−
20 mA)
V
V
V
BE(sat)
−
−
−
−
−
0.84
−
0.81
100
−
0.95
−
0.95
−
C
B
(I =
−
1.0 A, V
=
−
1.5 V)
V
BE(on)
C
CE
Cutoff Frequency
(I =
−
100 mA, V
=
−
5.0
V
, f =
1
00 MHz)
f
T
MHz
pF
C
CE
Output Capacitance
(V =
−
1.5
V
, f =
1
.0 MHz)
CB
C
obo
50
65
1. FR
−
4, Minimum Pad, 1 oz Coverage.
2. FR
−
4, 1
″
Pad, 1 oz Coverage.
3. Pulsed
Condition: Pulse Width < 300
m
sec, Duty Cycle < 2%.
2
NSS12200WT1G
0.5
0.4
0.3
0.2
0.5
0.4
0.3
0.2
2 A
1 A
I /I
= 100
C
B
800 mA
0.1
0
0.1
0
I
C
= 100 mA
500 mA
I /I
= 10
C
B
1
10
I ,
BASE CURRENT (mA)
100
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (AMPS)
B
C
Figure 1. Collector Emitter Voltage vs. Base Current
Figure 2. Collector Emitter Voltage vs. Collector Current
1.0
0.9
400
V
CE
= 1.5 V
125
°
C
25
°
C
T =
−
55
°
C
A
300
200
0.8
0.7
25
°
C
0.6
0.5
100
0
T =
−
55
°
C
A
125
°
C
0.4
V
CE
= 1.5 V
1
0.3
0.001
0.01
0.1
1
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1.0
0.9
0.8
10
1
1 s
100 ms
10 ms
1 ms
dc
I /I
= 10
C
B
I /I
= 100
C
B
0.1
0.7
0.6
SINGLE PULSE T
= 25
°
C
A
0.01
0.001
0.01
0.1
1
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 5. Base Emitter Saturation Voltage vs.
Base Current
Figure 6. Safe Operating Area
3
NSS12200WT1G
1
D = 0.50
D = 0.20
D = 0.10
0.1
D = 0.05
D = 0.02
D = 0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 7. Normalized Thermal Response
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
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onsemi
was negligent regarding the design or manufacture of the part.
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