onsemi-NSS1C201LT1G
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NSS1C201L, NSV1C201L
100
V
,
3
.0 A, Low V
CE(sat)
NPN
T
r
ansistor
2
ON Semiconductor’s
e PowerEdge
family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
Typical applications are DC
−
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
100 VOLTS, 3.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
BASE
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
2
EMITTER
3
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
MAXIMUM RATINGS
(T =
25
°
C)
A
2
Rating
Symbol
Max
100
140
7.0
Unit
Vdc
Vdc
Vdc
A
SOT
−
23 (TO
−
236)
CASE 318
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
STYLE 6
MARKING DIAGRAM
Collector Current
−
Continuous
Collector Current
−
Peak
I
C
2.0
I
3.0
A
CM
VT M
G
THERMAL CHARACTERISTICS
Characteristic
G
1
Symbol
Max
Unit
T
o
tal Device Dissipation
P
D
490
mW
T =
25
°
C
Derate above 25
°
C
VT =
Specific Device Code
A
3.7
mW/
°
C
°
C/W
M
= Date Code*
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
Junction
−
to
−
Ambient
R
255
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation
P
710
mW
D
T =
25
°
C
A
Derate above 25
°
C
4.3
mW/
°
C
°
C/W
ORDERING INFORMATION
Thermal Resistance,
Junction
−
to
−
Ambient
R
176
q
JA
†
Device
Package
Shipping
Junction and Storage
T
e
mperature Range
T , T
−
55 to
+150
°
C
J
stg
NSS1C201LT1G,
NSV1C201LT1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
4 @ 100 mm
, 1 oz. copper traces.
2. FR
−
4 @ 500 mm
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
2
2
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
October, 2016
−
Rev. 6
NSS1C201L/D
NSS1C201L, NSV1C201L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
(I =
10 mAdc, I
= 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
100
140
7.0
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
Vdc
E
C
Collector Cutoff Current
(V =
140 Vdc, I
= 0)
I
nAdc
nAdc
CBO
100
50
CB
E
Emitter Cutoff Current
(V =
6.0 Vdc)
EB
I
EBO
ON CHARACTERISTICS
h
FE
(I =
10 mA, V
= 2.0 V)
150
120
80
C
CE
(I =
500 mA, V
= 2.0 V)
240
360
C
CE
(I =
1.0 A, V
= 2.0 V)
C
CE
(I =
2.0 A, V
= 2.0 V)
40
C
CE
(I =
0.1 A, I
= 0.01 A)
V
V
CE(sat)
0.030
0.060
0.090
0.150
C
B
(I =
0.5 A, I
= 0.05 A)
C
B
(I =
1.0 A, I
= 0.100 A)
C
B
(I =
2.0 A, I
= 0.200 A)
C
B
(I =
1.0 A, I
= 0.100 A)
V
V
V
BE(sat)
0.950
0.850
C
B
(I =
1.0 A, V
= 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I =
100 mA, V
= 5.0
V
, f =
1
00 MHz)
f
MHz
T
110
230
14
C
CE
Input Capacitance (V
= 2.0
V
, f =
1
.0 MHz)
Cibo
pF
pF
EB
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
Cobo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
TYPICAL CHARACTERISTICS
0.8
0.7
Note 2
0.6
0.5
0.4
Note 1
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
T ,
AMBIENT TEMPERATURE (
°
C)
A
Figure 1. Power Derating
2
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
400
350
400
V
CE
= 2 V
V
CE
= 4 V
150
°
C
150
°
C
350
300
250
200
150
100
300
250
200
150
100
25
°
C
25
°
C
−
55
°
C
−
55
°
C
50
0
50
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I
= 10
I /I
= 20
C
B
C
B
150
°
C
−
55
°
C
150
°
C
25
°
C
25
°
C
0.1
0.1
−
55
°
C
0.01
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. Collector
−
Emitter Saturation Voltage
Figure 4. Collector
−
Emitter Saturation Voltage
1.2
1.0
0.8
0.6
1.2
1.0
0.8
0.6
I /I
= 10
I /I
= 50
C
B
C
B
−
55
°
C
−
55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.4
0.2
0.4
0.2
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 6. Base
−
Emitter Saturation Voltage
Figure 7. Base
−
Emitter Saturation Voltage
3
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
1
V
= 2 V
CE
3 A
2 A
1 A
−
55
°
C
25
°
C
0.5 A
0.1
I
C
= 0.1 A
0.001
150
°
C
0.4
0.2
0.01
0.001
0.01
0.1
1
10
0.0001
0.01
I ,
BASE CURRENT (A)
0.1
1
I ,
COLLECTOR CURRENT (A)
C
B
Figure 8. Base Emitter Voltage
Figure 9. Collector Saturation Region
400
350
300
250
200
150
100
50
45
40
35
30
25
20
15
10
T =
25
°
C
TEST
J
T =
25
°
C
TEST
J
f
= 1 MHz
f
= 1 MHz
50
0
5
0
0
1
2
3
4
5
6
7
8
0
10 20 30 40
50 60 70 80
, COLLECTOR BASE VOLTAGE (V)
CB
90 100
V
, EMITTER BASE VOLTAGE (V)
V
EB
Figure 10. Input Capacitance
Figure 11. Output Capacitance
140
120
10
1
T =
25
°
C
J
10 mS
f
= 1 MHz
= 2 V
TEST
V
CE
1 mS
100
80
100 mS
Thermal Limit
60
0.1
40
20
0
0.01
0.001
0.01
0.1
1
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current
−
Gain Bandwidth Product
Figure 13. Safe Operating Area
4
NSS1C201L, NSV1C201L
1000
100
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
5
NSS1C201L, NSV1C201L
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 6:
PIN 1.
BASE
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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−
Marking.pdf
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◊
NSS1C201L/D
