onsemi-NSS1C301ET4G
| Part # | onsemi-NSS1C301ET4G |
Download  | onsemi-NSS1C301ET4G |
DATA SHEET
NPN
T
r
ansistor, 100
V
,
3.0ꢀA, Low V
CE(sat)
100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW V
CE(sat)
TRANSISTOR
NSS1C301ET4G
2
COLLECTOR
2, 4
onsemi
’s e
PowerEdge family of low V
transistors are
CE(sat)
surface mount devices featuring ultra low saturation voltage (V
)
CE(sat)
1
and high current gain capability. These are designed for use in low
voltage, high speed switching applications where affordable efficient
energy control is important.
BASE
3
Typical applications are DC
−
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
EMITTER
4
2
1
3
2
DPAK
CASE 369C
STYLE 1
Features
•
Complement to NSS1C300ET4G
MARKING DIAGRAM
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
YWW
1C31EG
•
These Devices are Pb
−
Free and are RoHS Compliant
MAXIMUM RATINGS
(T =
25
°
C)
A
Y
=
Y
e
ar
WW
1C31E
G
= Work Week
= Device Code
= Pb
−
Free
Rating
Collector
−
Base Voltage
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Base Current
Symbol
Max
140
100
6.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
CBO
CEO
V
V
EB
ORDERING INFORMATION
I
C
3.0
†
Device
Package
Shipping
I
6.0
CM
NSS1C301ET4G
DPAK
2500/
I
B
0.5
(Pb
−
Free)
T
a
pe & Reel
T
o
tal Power Dissipation
P
D
D
NSV1C301ET4G
DPAK
(Pb
−
Free)
2500/
T
a
pe & Reel
33
W
@ T
= 25
°
C
C
0.26
W/
°
C
Derate above 25
°
C
P
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
2.1
0.017
W
W/
°
C
@ T
= 25
°
C
A
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−
65 to
+
1
50
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These
ratings are applicable when surface mounted on the minimum pad
sizes recommended.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2022
−
Rev. 6
NSS1C301E/D
NSS1C301ET4G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
R
3.8
°
C/W
q
JC
R
59.5
°
C/W
q
JA
2. These
ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mA, I
= 0)
100
140
6.0
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
0.1 mA, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
0.1 mA, I
= 0)
V
−
E
C
Collector Cutoff Current
(V =
140
V
, I
=
0
)
I
m
A
m
A
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V =
6.0 V)
−
EB
ON CHARACTERISTICS
h
FE
−
(I =
0.1 A, V
= 2.0 V)
200
200
120
80
−
−
−
−
−
−
360
−
C
CE
(I =
0.5 A, V
= 2.0 V)
C
CE
(I =
1.0 A, V
= 2.0 V)
C
CE
(I =
3.0 A, V
= 2.0 V)
C
CE
(I =
0.1 A, I
= 10 mA)
V
V
CE(sat)
BE(sat)
−
−
−
−
0.015
0.045
0.080
0.115
0.050
0.090
0.150
0.250
C
B
(I =
1.0 A, I
= 0.100 A)
C
B
(I =
2.0 A, I
= 0.200 A)
C
B
(I =
3.0 A, I
= 0.300 A)
C
B
(I =
1.0 A, I
= 0.1 A)
V
V
V
−
−
−
−
−
−
−
1.0
0.90
−
C
B
(I =
1.0 A, V
= 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
f
T
MHz
pF
pF
(I =
500 mA, V
= 10
V
, f =
1
00 MHz)
120
360
30
C
CE
Input Capacitance
Cibo
(V =
5.0
V
, f =
1
.0 MHz)
−
EB
Output Capacitance
Cobo
(V =
10
V
, f =
1
.0 MHz)
−
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed
Condition: Pulse Width = 300
m
s, Duty Cycle
≤
2%.
2
NSS1C301ET4G
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
100
500
150
°
C
150
°
C
V
CE
= 5 V
450
400
350
300
250
200
150
100
V
CE
= 2 V
25
°
C
25
°
C
−
55
°
C
−
55
°
C
50
0
50
0
0.01
0.1
1
10
0.01
0.01
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (A)
C
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.4
0.4
0.3
0.2
IC/IB = 50
IC/IB = 10
0.3
0.2
150
°
C
150
°
C
25
°
C
25
°
C
0.1
0
0.1
0
−
55
°
C
−
55
°
C
0.01
0.1
1
10
0.1
1
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (A)
C
C
Figure 3. Collector
−
Emitter Saturation
Figure 4. Collector
−
Emitter Saturation
Voltage
Voltage
1.2
1.0
0.8
0.6
0.4
1.2
1.0
−
55
°
C
IC/IB = 10
V
CE
= 2 V
−
55
°
C
25
°
C
25
°
C
0.8
0.6
0.4
150
°
C
150
°
C
0.2
0
0.2
0
0.01
0.1
1
10
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. Base
−
Emitter Saturation Voltage
Figure 6. Base
−
Emitter “On” Voltage
3
NSS1C301ET4G
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1,000
T =
25
°
C
A
Cib
I
C
= 3 A
I
= 2 A
C
100
10
I
= 1 A
C
Cob
I
= 0.5 A
C
I
= 0.1 A
C
0.2
0
0.1
1
10
100
1,000
10,000
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
V ,
REVERSE VOLTAGE (V)
R
Figure 7. Collector Saturation Region
Figure 8. Capacitance
1,000
10
1
100
m
S
V
CE
= 5 V
1 mS
1 S
100 mS
10 mS
100
10
0.1
Single Pulse
T
e
st at T
= 25
°
C
A
0.01
0.01
0.1
1
10
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 9. Current
−
Gain
−
Bandwidth Product
Figure 10. Safe Operating Area
10
1
D = 0.5
0.2
0.1
P
(pk)
0.05
0.02
R
R
= r(t) R
q
q
q
JC
JC(t)
= 3.8
°
C/W
JC
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
t
1
READ TIME AT t
t
1
Single Pulse
2
T
– T
= P
q
C (pk)
JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
10
Figure 11. Typical Transient Thermal Response, Junction
−
to
−
Case
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
4
ISSUE F
2
1
DATE 21 JUL 2015
3
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
b2
0.028 0.045
b3
0.180 0.215
MILLIMETERS
L4
b2
e
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
BOTTOM VIEW
A
SIDE VIEW
b
b
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2
0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
PLANE
C
0.020 BSC
L3
0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−−
0.040
0.155
−−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 9
0
5
CW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
PIN 1.
ANODE
STYLE 4:
STYLE 5:
PIN 1.
GATE
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. ANODE
4. CATHODE
2. ANODE
3. CATHODE
4. ANODE
3. EMITTER
3. SOURCE
4. DRAIN
3. GATE
XXXXXXG
ALYWW
AYWW
XXX
4. COLLECTOR
4. ANODE
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
STYLE 8:
PIN 1.
N/C
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
XXXXXG
PIN 1.
GATE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
3. ANODE
4. CATHODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
4. COLLECTOR
IC
Discrete
SOLDERING FOOTPRINT*
XXXXXX =
Device Code
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
