onsemi-NSS20500UW3TBG
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NSS20500UW3
20
V
,
7
.0 A, Low V
CE(sat)
PNP
T
r
ansistor
2
ON Semiconductor’s e
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
−
20 VOLTS
7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 m
W
Typical applications are DC
−
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
2
cluster. The high current gain allows e PowerEdge devices to be
COLLECTOR
3
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
This is a Pb
−
Free Device
1
BASE
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Max
−
20
Unit
Vdc
Vdc
Vdc
Adc
A
2
V
CEO
EMITTER
V
−
20
CBO
EBO
3
V
−
7.0
−
5.0
−
7.0
WDFN3
CASE 506AU
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
I
C
2
1
I
CM
ESD
HBM Class 3B
MM Class C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
VC M
G
Symbol
Max
Unit
1
T
o
tal Device Dissipation, T
= 25
°
C
P
D
875
7.0
mW
mW/
°
C
A
VC =
Specific Device Code
M
G
= Date Code
= Pb
−
Free Package
Thermal Resistance,
R
143
°
C/W
q
JA
T
o
tal Device Dissipation, T
= 25
°
C
P
D
1.5
11.8
W
mW/
°
C
A
ORDERING INFORMATION
Thermal Resistance,
R
85
°
C/W
°
C/W
W
q
JA
†
Device
Package
Shipping
Thermal Resistance,
R
q
JL
23
WDFN3
(Pb
−
Free)
3000/
T
a
pe & Reel
NSS20500UW3T2G
T
o
tal Device Dissipation
P
3.0
Dsingle
WDFN3
(Pb
−
Free)
3000/
T
a
pe & Reel
NSS20500UW3TBG
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to
+150
°
C
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
T
−
55 to
+125
°
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR
−
4 @ 100 mm
, 1 oz copper traces.
2. FR
−
4 @ 500 mm
, 1 oz copper traces.
3. Thermal
response.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2012
−
Rev. 3
NSS20500UW3/D
NSS20500UW3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−
10 mAdc, I
= 0)
−
20
−
20
−
7.0
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
−
0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
−
0.1 mAdc, I
= 0)
Vdc
−
E
C
Collector Cutoff Current
(V =
−
20 Vdc, I
= 0)
I
m
Adc
m
Adc
CBO
−
0.1
−
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V =
−
7.0 Vdc)
−
EB
ON CHARACTERISTICS
h
FE
(I =
−
10 mA, V
=
−
2.0 V)
250
250
220
200
180
−
−
−
−
−
−
C
CE
(I =
−
500 mA, V
=
−
2.0 V)
−
C
CE
(I =
−
1.0 A, V
=
−
2.0 V)
300
300
250
C
CE
(I =
−
2.0 A, V
=
−
2.0 V)
C
CE
(I =
−
3.0 A, V
=
−
2.0 V)
C
CE
V
V
CE(sat)
−
−
−
−
−
−
−
0.010
−
0.050
−
0.080
−
0.150
−
0.200
−
0.270
−
0.015
−
0.070
−
0.100
−
0.170
−
0.240
−
0.260
C
B
(I =
−
1.0 A, I
=
−
0.100 A)
C
B
(I =
−
1.0 A, I
=
−
0.010 A)
C
B
(I =
−
2.0 A, I
=
−
0.020 A)
C
B
(I =
−
3.0 A, I
=
−
0.030 A)
C
B
(I =
−
4.0 A, I
=
−
0.400 A)
C
B
(I =
−
1.0 A, I
=
−
0.01 A)
V
V
V
BE(sat)
−
−
0.76
0.80
−
−
0.900
−
0.900
C
B
(I =
−
2.0 A, V
=
−
3.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I =
−
100 mA, V
=
−
5.0
V
, f =
1
00 MHz)
f
T
MHz
100
−
−
C
CE
Input Capacitance (V
=
−
0.5
V
, f =
1
.0 MHz)
Cibo
475
180
pF
pF
EB
Output Capacitance (V
=
−
3.0
V
, f =
1
.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V
=
−
15
V
, I
=
7
50 mA, I
= 15 mA)
t
t
−
−
−
−
−
−
−
−
75
ns
ns
ns
ns
CC
C
B1
d
Rise (V
=
−
15
V
, I
=
7
50 mA, I
= 15 mA)
t
r
160
350
160
CC
C
B1
Storage (V
=
−
15
V
, I
=
7
50 mA, I
= 15 mA)
CC
C
B1
s
Fall (V
=
−
15
V
, I
=
7
50 mA, I
= 15 mA)
t
f
CC
C
B1
4. Pulsed
Condition: Pulse Width = 300
m
sec, Duty Cycle
≤
2%.
5. Guaranteed
by design but not tested.
2
NSS20500UW3
0.5
0.4
0.3
0.2
0.1
3.5
3.0
I /I
= 100
C
B
I /I
= 10
C
B
2.5
2.0
V
= 150
°
C
CE(sat)
V
=
−
55
°
C
1.5
1.0
CE(sat)
25
°
C
150
°
C
0.5
0
−
55
°
C
25
°
C
10
0
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
850
750
1.4
150
°
C (5 V)
1.2
1.0
0.8
650
550
450
350
250
150
°
C (2 V)
25
°
C (5 V)
−
55
°
C
25
°
C
25
°
C (2 V)
0.6
0.4
0.2
150
°
C
−
55
°
C (5 V)
−
55
°
C (2 V)
150
50
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1.0
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.8
0.6
0.4
10 mA
100 mA
300 mA
V
CE
=
−
1.0 V
I =
500 mA
C
−
55
°
C
25
°
C
150
°
C
0.2
0
0.2
0.1
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn
−
On Voltage vs.
Figure 6. Saturation Region
Collector Current
3
NSS20500UW3
260
550
500
C
(pF)
C
(pF)
obo
ibo
240
220
200
180
160
140
120
450
400
350
300
250
200
100
80
0
1.0
2.0
3.0
4.0
5.0
6.0
0
5.0
V ,
COLLECTOR BASE VOLTAGE (V)
CB
10
15
20
25
V
EB
, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1
1.0 mS
10 mS
100 mS
1.0 S
Thermal
Limit
0.1
0.01
0.01
0.1
1
10
100
V
CE
(V
dc
)
Figure 9. PNP Safe Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN3 2×2, 1.3P
CASE 506AU
ISSUE A
DATE 18 AUG 2016
1
SCALE 4:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY
APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
MILLIMETERS
INCHES
NOM
0.030
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
1.30 BSC
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
0.10
C
K
L
0.35 REF
0.40
0.014 REF
0.016
2 X
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SIDE VIEW
GENERIC
MARKING DIAGRAM*
A
0.10
0.08
C
C
XX M
8 X
G
(A3)
1
A1
SEATING
PLANE
C
XX =
Specific Device Code
M
= Date Code
D2
e
*This information is generic. Please refer
to device data sheet for actual part
marking.
e/2
2
1
Pb
−
Free indicator, “G” or microdot “
G
”,
2X
L
may or may not be present.
K
SOLDERING FOOTPRINT*
1.300
2X
0.400
E2
0.600
0.250
3
0.10
0.05
C
C
A
B
3X
b
NOTE 3
1.100
0.300
BOTTOM VIEW
0.400
0.275
1.600
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON21416D
WDFN3 2X2, 1.3P
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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,
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−
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