onsemi-NSS30101LT1G
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NSS30101LT1G
Low V
CE(sat)
T
r
ansistor
,
NPN, 30 V, 2.0 A, SOT-23
Package
2
ON Semiconductor’s e
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
30 VOLTS
2.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 m
W
CE(sat)
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
3
1
2
BASE
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
3
MAXIMUM RATINGS
(T =
25
°
C)
A
1
Rating
Symbol
Max
30
Unit
Vdc
Vdc
Vdc
A
2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
V
V
CEO
SOT−23 (TO−236)
CASE 318
50
CBO
EBO
STYLE 6
5.0
1.0
2.0
Collector Current − Continuous
Collector Current − Peak
I
C
MARKING DIAGRAM
I
A
CM
THERMAL CHARACTERISTICS
Characteristic
VS6M
G
G
Symbol
Max
Unit
1
T
o
tal Device Dissipation
P
310
mW
D
T =
25
°
C
Derate above 25
°
C
A
VS6 = Specific Device Code
2.5
mW/
°
C
°
C/W
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
Junction to Ambient
R
403
θ
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation
P
710
mW
D
T =
25
°
C
A
Derate above 25
°
C
5.7
mW/
°
C
°
C/W
Thermal Resistance,
Junction to Ambient
R
176
θ
JA
ORDERING INFORMATION
†
Device
Package
Shipping
T
o
tal Device Dissipation
(Single Pulse < 10 sec.)
P
575
mW
Dsingle
NSS30101
L
T
1G
SOT−23
3000/
T
a
pe & Reel
Junction and Storage
T
e
mperature Range
T , T
−55 to
+150
°
C
(Pb−Free)
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
4
@
M
inimum Pad.
2. FR
−
4
@
1
.0 X 1.0 inch Pad.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2016 − Rev. 2
NSS30101L/D
NSS30101LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mAdc, I
= 0)
30
50
5.0
−
−
−
C
B
Collector
−
B
ase Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
Vdc
−
E
C
Collector Cutoff Current
(V =
30 Vdc, I
= 0)
I
m
Adc
m
Adc
m
Adc
CBO
0.1
0.1
0.1
CB
E
Collector−Emitter Cutoff Current
(V =
30 Vdc)
I
CES
−
CES
Emitter Cutoff Current
(V =
4.0 Vdc)
EB
I
EBO
−
ON CHARACTERISTICS
h
FE
(I =
50 mA, V
= 5.0 V)
300
300
200
−
900
−
C
CE
(I =
0.5 A, V
= 5.0 V)
C
CE
(I =
1.0 A, V
= 5.0 V)
C
CE
(I =
1.0 A, I
= 100 mA)
V
V
CE(sat)
−
−
−
0.200
0.125
0.075
C
B
(I =
0.5 A, I
= 50 mA)
C
B
(I =
0.1 A, I
= 1.0 mA)
C
B
(I =
1.0 A, I
= 0.1 A)
V
V
V
BE(sat)
−
−
1.1
1.1
−
C
B
V
BE(on)
(I =
1.0 mA, V
= 2.0 V)
C
CE
Cutoff Frequency
f
T
MHz
pF
(I =
100 mA, V
= 5.0
V
, f =
1
00 MHz
100
−
C
CE
Output Capacitance (f = 1.0 MHz)
C
obo
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed
Condition: Pulse Width = 300
m
sec, Duty Cycle
≤
2%
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
C
= 2 A
I
= 1 A
C
I /I
= 100
c
b
I /I
= 10
c
b
I
C
= 500 mA
0.1
0
0.1
0
I
= 100 mA
C
0.001
0.01
I (A)
0.1
0.2
0.001
0.01
0.1
1
2
I (A)
c
b
Figure 1. V
CE
versus I
b
Figure 2. V
CE
versus I
c
2
NSS30101LT1G
800
1.2
V
CE
= 5 V
V
CE
= 5 V
700
600
500
400
300
200
+125
°
C
1.0
0.8
0.6
0.4
−55
°
C
+25
°
C
+25
°
C
−55
°
C
+125
°
C
0.2
0
100
0
0.001
0.01
0.1
1
2
0.001
0.01
0.1
1
2
I (A)
c
I (A)
c
Figure 3. h
FE
versus I
c
Figure 4. V
BE(on)
versus I
c
1.2
10
1
1.0
0.8
0.6
0.4
I /I
= 10
c
b
I /I
= 100
c
b
1 ms
10 ms
0.1
100 ms
1 s
0.2
0
SINGLE PULSE T
= 25
°
C
amb
dc
0.01
0.001
0.01
0.1
1
2
0.1
1
10
100
I (A)
c
V
CE
(V)
Figure 5. V
BE(sat)
versus I
c
Figure 6. Safe Operating Area
0.5
0.2
0.1
1.0E+00
1.0E-01
0.05
0.02
D = 0.01
1.0E-02
1.0E-03
r(t)
1E-05
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (sec)
Figure 7. Normalized Thermal Response
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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