onsemi-NSS40200LT1G
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NSS40200L, NSV40200L
Low V
CE(sat)
T
r
ansistor
,
PNP, -40 V, 2.0 A
2
ON Semiconductor’s e
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
−40 VOLTS
2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 m
W
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
SOT−23 (TO−236)
CASE 318
Features
STYLE 6
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MARKING DIAGRAM
VA M
G
G
1
VA =
Specific Device Code*
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
ORDERING INFORMATION
†
Device
Package
Shipping
NSS40200
L
T
1G
SOT−23 3,000
/
T
a
pe & Reel
(Pb−Free)
NSV40200
L
T
1G
SOT−23 3,000
/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2016 − Rev. 8
NSS40200L/D
NSS40200L, NSV40200L
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Max
−40
Unit
Vdc
Vdc
Vdc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
V
V
CEO
−40
CBO
EBO
−7.0
−2.0
−4.0
−300
Collector Current − Continuous
Collector Current − Peak
Base Current − Peak
I
C
I
I
A
CM
BM
mA
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation
P
D
T =
25
°
C
460
3.7
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
°
C/W
270
T
o
tal Device Dissipation
P
D
T =
25
°
C
540
4.3
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction−to−Ambient
R
°
C/W
mW
°
C
q
JA
230
T
o
tal Device Dissipation
(Single Pulse < 10 sec)
P
Dsingle
710
Junction and Storage
T
e
mperature Range
T , T
−55 to +150
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2
1. FR
−
4
@
1
00 mm
, 1 oz. copper traces.
2
2. FR
−
4
@
5
00 mm
, 1 oz. copper traces.
3. Thermal
response.
2
NSS40200L, NSV40200L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
V
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
−10 mAdc, I
= 0)
−40
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
B
ase Breakdown Voltage
(I =
−0.1 mAdc, I
= 0)
Vdc
Vdc
−40
−7.0
−
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
−0.1 mAdc, I
= 0)
E
C
Collector Cutoff Current
(V =
−40 Vdc, I
= 0)
I
m
Adc
m
Adc
CBO
−0.1
−0.1
CB
E
Emitter Cutoff Current
(V =
−7.0 Vdc)
EB
I
EBO
−
ON CHARACTERISTICS
h
FE
(I =
−10 mA, V
= −2.0 V)
250
220
180
150
−
300
−
−
−
−
−
C
CE
(I =
−500 mA, V
= −2.0 V)
C
CE
(I =
−1.0 A, V
= −2.0 V)
C
CE
(I =
−2.0 A, V
= −2.0 V)
−
C
CE
V
V
CE(sat)
−
−
−
−
−0.010
−0.080
−0.135
−0.135
−0.017
−0.095
−0.170
−0.170
C
B
(I =
−1.0 A, I
= −0.100 A)
C
B
(I =
−1.0 A, I
= −0.010 A)
C
B
(I =
−2.0 A, I
= −0.200 A)
C
B
(I =
−1.0 A, I
= −0.01 A)
V
V
V
BE(sat)
−
−
−
−
−0.900
−0.900
C
B
(I =
−1.0 A, V
= −2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I =
−100 mA, V
= −5.0
V
, f =
1
00 MHz)
f
MHz
T
100
−
−
−
−
−
C
CE
Input Capacitance (V
= 0.5
V
, f =
1
.0 MHz)
Cibo
325
62
pF
pF
EB
Output Capacitance (V
= 3.0
V
, f =
1
.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V
= −30
V
, I
=
7
50 mA, I
= 15 mA)
t
t
−
−
−
−
−
−
−
−
60
ns
ns
ns
ns
CC
C
B1
d
Rise (V
= −30
V
, I
=
7
50 mA, I
= 15 mA)
t
r
120
400
130
CC
C
B1
Storage (V
= −30
V
, I
=
7
50 mA, I
= 15 mA)
CC
C
B1
s
Fall (V
= −30
V
, I
=
7
50 mA, I
= 15 mA)
t
f
CC
C
B1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
5. Guaranteed
by design but not tested.
3
NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
0.25
0.2
0.35
V
= 150
°
C
CE(sat)
V
= 150
°
C
−55
°
C
IC/IB = 100
CE(sat)
IC/IB = 10
0.3
0.25
0.2
25
°
C
25
°
C
0.15
0.1
−55
°
C
0.15
0.1
0.05
0
0.05
0
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
800
1.1
1.0
0.9
0.8
0.7
0.6
0.5
150
°
C (5.0 V)
150
°
C (2.0 V)
750
700
650
600
550
500
450
400
350
300
250
200
IC/IB = 10
−55
°
C
25
°
C
25
°
C (5.0 V)
25
°
C (2.0 V)
−55
°
C (5.0 V)
−55
°
C (2.0 V)
150
°
C
0.4
0.3
150
100
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
1.0
0.8
0.6
0.4
10 mA
V
CE
= −2.0 V
V
CE
(V) I
= 500 mA
C
−55
°
C
25
°
C
0.8
0.7
100 mA
300 mA
0.6
0.5
0.4
150
°
C
0.3
0.2
0
0.2
0.1
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
4
NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
325
300
275
250
225
200
175
150
100
C
(pF)
ibo
90
80
70
60
50
40
C
(pF)
obo
30
20
125
100
0
1.0
2.0
3.0
4.0
5.0
6.0
0
5.0
10
, COLLECTOR BASE VOLTAGE (V)
CB
15
20
25
30
35
V
, EMITTER BASE VOLTAGE (V)
V
EB
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
100 ms
1 s
10 ms
1 ms
1.0
0.1
Thermal Limit
1.0
0.01
0.01
0.1
10
100
V
CE
(V )
dc
Figure 9. Safe Operating Area
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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