onsemi-NSS60201LT1G
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NSS60201LT1G
60
V
,
4
.0 A, Low V
CE(sat)
NPN
T
r
ansistor
2
ON Semiconductor’s
e PowerEdge
family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
Typical applications are DC
−
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
60 VOLTS, 4.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
70 m
W
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Max
60
Unit
Vdc
Vdc
Vdc
A
3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
140
8.0
2.0
4.0
1
2
SOT
−
23 (TO
−
236)
CASE 318
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
I
C
I
A
CM
STYLE 6
ESD
HBM Class 3B
MM Class C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
VJ M
G
T
o
tal Device Dissipation
P
460
mW
D
G
T =
25
°
C
A
1
Derate above 25
°
C
3.7
mW/
°
C
°
C/W
Thermal Resistance,
R
270
q
JA
Junction
−
to
−
Ambient
VJ =
Specific Device Code
M
G
= Date Code*
= Pb
−
Free Package
T
o
tal Device Dissipation
P
540
mW
D
T =
25
°
C
A
Derate above 25
°
C
4.3
mW/
°
C
°
C/W
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
R
230
q
JA
Junction
−
to
−
Ambient
T
o
tal Device Dissipation
(Single Pulse < 10 sec.)
P
710
mW
Dsingle
ORDERING INFORMATION
Junction and Storage
T
e
mperature Range
T , T
−
55 to
+150
°
C
J
stg
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NSS60201
L
T
1G
SOT
−
23
(Pb
−
Free)
3000/
T
a
pe & Reel
2
1. FR
−
4 @ 100 mm
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
2
2. FR
−
4 @ 500 mm
, 1 oz. copper traces.
3. Thermal
response.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
October, 2016
−
Rev. 3
NSS60201L/D
NSS60201LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mAdc, I
= 0)
60
140
8.0
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
0.1 mAdc, I
= 0)
Vdc
−
E
C
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
I
m
Adc
m
Adc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V =
6.0 Vdc)
−
EB
ON CHARACTERISTICS
h
FE
(I =
10 mA, V
= 2.0 V)
160
160
150
100
−
−
−
−
−
−
350
−
C
CE
(I =
500 mA, V
= 2.0 V)
C
CE
(I =
1.0 A, V
= 2.0 V)
C
CE
(I =
2.0 A, V
= 2.0 V)
C
CE
(I =
0.1 A, I
= 0.010 A)
V
V
CE(sat)
−
−
−
−
−
−
0.020
0.075
0.140
C
B
(I =
1.0 A, I
= 0.100 A)
C
B
(I =
2.0 A, I
= 0.200 A)
C
B
(I =
1.0 A, I
= 10 mA)
V
V
V
BE(sat)
−
−
0.790
0.760
0.900
0.900
C
B
(I =
1.0 A, V
= 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I =
100 mA, V
= 5.0
V
, f =
1
00 MHz)
f
MHz
T
100
−
−
−
−
−
C
CE
Input Capacitance (V
= 0.5
V
, f =
1
.0 MHz)
Cibo
380
45
pF
pF
EB
Output Capacitance (V
= 3.0
V
, f =
1
.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V
= 30
V
, I
=
7
50 mA, I
= 15 mA)
t
t
−
−
−
−
−
−
−
−
55
100
1100
120
ns
ns
ns
ns
CC
C
B1
d
Rise (V
= 30
V
, I
=
7
50 mA, I
= 15 mA)
t
r
CC
C
B1
Storage (V
= 30
V
, I
=
7
50 mA, I
= 15 mA)
CC
C
B1
s
Fall (V
= 30
V
, I
=
7
50 mA, I
= 15 mA)
t
f
CC
C
B1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed
Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
2
NSS60201LT1G
325
300
275
250
225
200
175
150
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
I /I
= 10
C
B
150
°
C (5.0 V)
150
°
C (2.0 V)
25
°
C (5.0 V)
150
°
C
25
°
C (2.0 V)
25
°
C
−
55
°
C (5.0 V)
−
55
°
C (2.0 V)
125
−
55
°
C
100
75
50
25
0.001
0.001
0.01
0.10
1.0
10
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector
−
Emitter Saturation Voltage
Figure 2. DC Current versus Collector Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−
55
°
C
−
55
°
C
25
°
C
25
°
C
150
°
C
150
°
C
0.3
0
0
0.1
1.0
10
0.001
0.01
0.10
1.0
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. V
BE(sat)
Figure 4. V
BE(on)
400
375
350
325
300
275
250
225
200
175
1.0
0.8
0.6
0.4
0.2
0
T =
25
°
C
J
I
C
= 10 mA
100 mA
500 mA
300 mA
0
0.0001
0.001
0.01
0.1
0
1
2
3
4
5
6
I ,
BASE CURRENT (A)
B
V
EB
, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
3
NSS60201LT1G
65
60
55
50
45
40
35
30
25
20
15
10
10
T =
25
°
C
J
1 ms
1 s
1
Thermal Limit
0.1
100 ms
0.01
10 ms
0.001
0
5
10
15
20
25
30
35
0.10
10
10
100
V
CB
, COLLECTOR BASE VOLTAGE (V)
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
Single Pulse Test @ T
amb
= 25
5
C
4
NSS60201LT1G
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
_
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
_
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
PIN 1.
BASE
SIDE VIEW
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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◊
NSS60201L/D
