onsemi-NST846BMX2T5G
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DATA SHEET
COLLECTOR
General Purpose
Transistors
NPN Silicon
3
1
BASE
2
NST846BMX2,
NST847AMX2,
NST847BMX2
EMITTER
3
Features
1
2
•
Moisture Sensitivity Level: 1
•
ESD Rating
−
Human Body Model: > 4000 V
ESD Rating
−
Machine Model: > 350 V
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
X2DFN3 (1.0×0.6)
CASE 714AC
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
XX M
Collector-Emitter Voltage
NST846
NST847
V
CEO
V
CBO
V
EBO
65
45
Vdc
XX =
Specific Device Code
Collector
−
Base Voltage
Emitter
−
Base Voltage
NST846
NST847
80
50
Vdc
Vdc
M
= Date Code
NST846
NST847
6.0
6.0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Collector Current
−
Continuous
I
100
mAdc
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
P
D
@ T
= 25
°
C
165
1.39
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
R
720
°
C/W
q
JA
P
D
@ T
= 25
°
C
590
4.93
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
R
203
°
C/W
q
JA
Junction and Storage
T
e
mperature Range
T , T
−
55 to
+150
°
C
J
stg
2
2
1. Surface
−
mounted on FR4 board using a 0.6 mm
, 2 oz. Cu pad
2. Surface
−
mounted on FR4 board using a 100 mm
, 2 oz. Cu pad
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2022
−
Rev. 0
NST846BMX2/D
NST846BMX2, NST847AMX2, NST847BMX2
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
NST846B
NST847A, B
V
65
45
−
−
−
−
V
V
V
V
(BR)CEO
(I =
10 mA)
C
Collecto
r
−
Emitter Breakdown Voltage
NST846B
NST847A, B
V
80
50
−
−
−
−
(BR)CES
(BR)CBO
(BR)EBO
(I =
10
m
A, V
= 0)
C
EB
Collecto
r
−
Base Breakdown Voltage
(I =
10
m
A)
C
NST846B
NST847A, B
V
V
80
50
−
−
−
−
Emitte
r
−
Base Breakdown Voltage
(I =
1.0
m
A)
E
NST846B
NST847A/B
6.0
6.0
−
−
−
−
Collector Cutoff Current (V
= 30 V)
I
−
−
−
−
15
5.0
nA
m
A
CB
CBO
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I =
100
m
A, V
= 1.0 V)
C
NST847A
NST846B, NST847B
h
FE
−
−
160
270
−
−
−
CE
(I =
2.0 mA, V
= 5.0 V)
NST847A
NST846B, NST847B
110
200
180
290
220
450
C
CE
Collecto
r
−
Emitter Saturation Voltage
Bas
e
−
Emitter Saturation Voltage
Bas
e
−
Emitter Voltage
(I =
10 mA, I
= 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
(I =
100 mA, I
= 5.0 mA)
C
B
(I =
10 mA, I
= 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
(I =
100 mA, I
= 5.0 mA)
C
B
(I =
2.0 mA, V
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
100
−
−
−
MHz
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
C
−
4.5
pF
dB
CB
obo
Noise Figure (I
= 0.2 mA,
NF
C
V
= 5.0 Vdc, R
= 2.0 k
W
,
NST847A
NST846B, NST847B
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Turn
−
off
Turn
−
on
+20 V
+20 V
PW = 20us
Duty Cycle =<2%
RC = 2K Ohms
PW = 40
0
ns
Duty Cycle=<2%
+10.9 V
0 V
RC = 2K Ohms
+10.9 V
RB = 10K Ohms
RB = 10
K
O
hms
0V
−
0.5 V
Cs<15pF*
1N916 or
equivalent
−
9.1 V
Cs<15pF*
VCC = 20V, IC = 10mA, IB = 1mA
Forced HFE= 10
VCC = 20V, IC = 10mA
IB1 = 1mA, IB2 =
−
1 mA
Forced HFE
= 10
* Total shunt capacitance of test jig and connectors.
* Total shunt capacitance of test jig and connectors.
Figure 1. Delay and Rise Time Equivalent Test
Circuit
Figure 2. Storage and Fall Time Equivalent
Test Circuit
2
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST846BMX2
10
1000
I /I
= 10
C
B
V
CC
= 40 V
C
ibo
V
CC
= 20 V
1
100
10
V
CC
= 5 V
C
obo
0.1
0.1
1
10
80
1
10
100
REVERSE BIAS VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Turn
−
On Time
1000
1000
I /I
= 10
C
B
V
CC
= 40 V
V
CC
= 40 V
V
CC
= 20 V
100
10
V
= 20 V
CC
V
CC
= 5 V
V
CC
= 5 V
t
′
= t
−
1/8 x t
s
s
= I
f
I
B1
B2
I /I
= 10
C
B
100
1
10
100
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Rise Time
Figure 6. Storage Time
1000
1000
V
CE
= 1 V
I
B1
= I
B2
V
CC
= 40 V
T =
150
°
C
A
T =
25
°
C
A
V
CC
= 20 V
T =
−
55
°
C
A
100
10
100
10
V
CC
= 5 V
1
10
100
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Fall Time
Figure 8. DC Current Gain
3
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST846BMX2
1000
2.0
V
CE
= 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T =
150
°
C
T =
25
°
C
A
A
I
C
= 100 mA
T =
−
55
°
C
A
100
10
0.4
0.2
0
I
C
= 10 mA
0.1
0.1
1
10
100
0.01
1
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region
0.25
0.20
0.15
0.10
0.95
0.90
0.85
0.80
0.75
0.70
I /I
= 10
T =
25
°
C
A
I /I
= 10
T =
25
°
C
A
C
B
C
B
0.05
0
0.65
0.60
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
C
C
Figure 11. Collector
−
Emitter Saturation
Figure 12. Base
−
Emitter Saturation Voltage vs.
Voltage vs. Collector Current
Collector Current
0.16
0.14
0.12
0.10
0.08
0.06
0.04
1000
100
I
B
= 5.0 mA
4.5 mA
4.0 mA
3.0 mA
2.5 mA
2.0 mA
3.5 mA
1.5 mA
1.0 mA
0.5 mA
10
1
V
CE
= 2 V
0.02
0
T =
25
°
C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
I ,
COLLECTOR CURRENT (mA)
100
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
C
Figure 13. Collector Current vs.
Figure 14. Current Gain Bandwidth vs.
Collector Current
Collector
−
Emitter Voltage
4
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST846BMX2
1000
100
10
1 s
Thermal Limit
100 ms
10 ms
1 ms
1
0.1
0.01
0.1
1
10
100
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 15. Safe Operating Area
5
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847AMX2
100
1000
V
CC
= 40 V
I /I
= 10
C
B
V
CC
= 20 V
V
CC
= 5 V
C
ibo
10
100
10
C
obo
1
0.1
1
10
1
10
100
REVERSE BIAS VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 16. Capacitance
Figure 17. Turn
−
On Time
1000
1000
I /I
= 10
V
CC
= 40 V
C
B
V
CC
= 40 V
V
CC
= 20 V
V
CC
= 20 V
100
10
V
CC
= 5 V
V
CC
= 5 V
t
′
= t
−
1/8 x t
s
s
= I
f
I
B1
B2
I /I
= 10
C
B
100
1
10
100
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 18. Rise Time
Figure 19. Storage Time
1000
1000
V
CE
= 1 V
V
CC
= 40 V
I
B1
= I
B2
T =
150
°
C
A
T =
25
°
C
A
V
CC
= 20 V
T =
−
55
°
C
V
CC
= 5 V
100
10
100
10
A
1
10
100
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 20. Fall Time
Figure 21. DC Current Gain
6
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847AMX2
1000
2.0
V
CE
= 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
C
= 100 mA
T =
150
°
C
A
T =
25
°
C
A
100
10
T =
−
55
°
C
A
0.4
0.2
0
I
C
= 10 mA
0.1
1
10
100
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 22. DC Current Gain
Figure 23. Collector Saturation Region
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.20
0.18
0.16
0.14
I /I
= 10
T =
25
°
C
A
I /I
= 10
T =
25
°
C
A
C
B
C
B
0.12
0.10
0.08
0.06
0.04
0.65
0.60
0.02
0
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
C
C
Figure 24. Collector
−
Emitter Saturation
Figure 25. Base
−
Emitter Saturation Voltage vs.
Voltage vs. Collector Current
Collector Current
0.25
0.20
0.15
0.10
1000
100
I
B
= 5.0 mA
4.5 mA
4.0 mA
3.0 mA
3.5 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
10
1
0.05
0
V
CE
= 2 V
T =
25
°
C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
I ,
COLLECTOR CURRENT (mA)
100
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
C
Figure 26. Collector Current vs.
Figure 27. Current Gain Bandwidth vs.
Collector Current
Collector
−
Emitter Voltage
7
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847AMX2
1000
100
1 s
100 ms
10 ms
1 ms
Thermal Limit
10
1
1
10
, COLLECTOR
−
EMITTER VOLTAGE (V)
100
V
CE
Figure 28. Safe Operating Area
8
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847BMX2
10
1000
I /I
= 10
C
B
V
CC
= 40 V
C
ibo
V
CC
= 20 V
1
100
10
V
CC
= 5 V
C
obo
0.1
0.1
1
10
100
100
100
1
10
100
REVERSE BIAS VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 29. Capacitance
Figure 30. Turn
−
On Time
1000
1000
I /I
= 10
C
B
V
= 40 V
CC
V
= 40 V
CC
V
CC
= 20 V
100
10
V
CC
= 20 V
V
= 5 V
CC
V
CC
= 5 V
t
′
= t
−
1/8 x t
s
s
f
I
= I
B2
B1
I /I
= 10
C
B
100
1
10
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 31. Rise Time
Figure 32. Storage Time
1000
1000
V
= 1 V
I
B1
= I
B2
CE
V
= 40 V
CC
T =
150
°
C
A
T =
25
°
C
A
T =
−
55
°
C
A
V
CC
= 20 V
100
10
100
10
V
= 5 V
CC
1
10
0.1
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 33. Fall Time
Figure 34. DC Current Gain
9
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847BMX2
1000
1.0
V
CE
= 10 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
T =
150
°
C
T =
25
°
C
A
A
I
C
= 100 mA
T =
−
55
°
C
A
100
10
I
C
= 10 mA
0.1
0.2
0.1
0
0.1
1
10
100
0.01
1
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 35. DC Current Gain
Figure 36. Collector Saturation Region
0.20
0.18
0.16
0.14
0.95
0.90
0.85
0.80
0.75
0.70
I /I
= 10
T =
25
°
C
A
C
B
I /I
= 10
T =
25
°
C
A
C
B
0.12
0.10
0.08
0.06
0.04
0.65
0.60
0.02
0
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
0.001
0.01
I ,
COLLECTOR CURRENT (A)
0.1
C
C
Figure 37. Collector
−
Emitter Saturation
Figure 38. Base
−
Emitter Saturation Voltage vs.
Voltage vs. Collector Current
Collector Current
0.16
0.14
0.12
0.10
0.08
0.06
0.04
1000
100
I
B
= 5.0 mA
4.5 mA
4.0 mA
3.0 mA
2.5 mA
2.0 mA
3.5 mA
1.5 mA
1.0 mA
0.5 mA
10
1
V
CE
= 2 V
0.02
0
T =
25
°
C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
I ,
COLLECTOR CURRENT (mA)
100
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
C
Figure 39. Collector Current vs.
Figure 40. Current Gain Bandwidth vs.
Collector Current
Collector
−
Emitter Voltage
10
NST846BMX2, NST847AMX2, NST847BMX2
TYPICAL CHARACTERISTICS
−
NST847BMX2
1000
100
10
1 s
100 ms
10 ms
1 ms
Thermal Limit
1
0.1
0.01
0.1
1
10
100
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 41. Safe Operating Area
ORDERING INFORMATION
Device
†
Marking
AD
Package
Shipping
NST846BMX2T5G
NST847AMX2T5G
NST847BMX2T5G
X2DFN3
(1.0×0.6)
AA
8,000 /
T
a
pe & Reel
AE
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
11
NST846BMX2, NST847AMX2, NST847BMX2
PACKAGE DIMENSIONS
X2DFN3 1.0×0.6, 0.35P
CASE 714AC
ISSUE A
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
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−
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−
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o
ll Free USA/Canada
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