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. “
T
ypical” parameters which may be provided in
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data sheets and/
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does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
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d
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NST847BDP6T5G
Dual General Purpose
Transistor
The NST847BDP6T5G device is a spin
−
off of our popular
SOT
−
23/SOT
−
323/SOT
−
563 three
−
leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT
−
963
six
−
leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low
−
power surface mount
applications where board space is at a premium.
Features
(3)
(2)
(1)
Q
•
h ,
200
−
450
FE
•
Low V
,
≤
0.25 V
CE(sat)
Q
•
Simplifies Circuit Design
•
Reduces Board Space
1
2
•
Reduces Component Count
•
This is a Pb
−
Free Device
(4)
(5)
(6)
NST847BDP6T5G
MAXIMUM RATINGS
Rating
Symbol
Value
45
Unit
Vdc
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Collector Current
−
Continuous
Electrostatic Discharge
V
CEO
V
CBO
V
EBO
50
Vdc
6.0
Vdc
I
C
100
mAdc
SOT
−
963
CASE 527AD
HBM
MM
ESD
Class
2
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation T
= 25
°
C
P
D
240
1.9
mW
mW/
°
C
A
J M
Thermal Resistance, Junction-to-Ambient
R
520
°
C/W
q
JA
1
T
o
tal Device Dissipation T
= 25
°
C
P
280
2.2
mW
mW/
°
C
A
D
J
M
= Device Code
= Date Code
Thermal Resistance, Junction-to-Ambient
R
446
°
C/W
q
JA
Symbol
Max
Unit
T
o
tal Device Dissipation T
= 25
°
C
P
350
2.8
mW
ORDERING INFORMATION
A
D
mW/
°
C
†
Device
NST847BDP6T5G
Package
Shipping
Thermal Resistance, Junction-to-Ambient
R
357
°
C/W
q
JA
SOT
−
963 8000/
T
a
pe
& Reel
(Pb
−
Free)
T
o
tal Device Dissipation T
= 25
°
C
P
D
420
3.4
mW
mW/
°
C
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance, Junction-to-Ambient
R
297
°
C/W
q
JA
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to
+150
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
2
1. FR
−
4 @ 100 mm
, 1 oz. copper traces, still air.
2. FR
−
4 @ 500 mm
, 1 oz. copper traces, still air.
3. Dual
heated values assume total power is sum of two equally powered channels.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
June, 2017
−
Rev. 1
NST847BDP6/D
NST847BDP6T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage (I
= 10 mA)
V
45
50
50
6.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collecto
r
−
Emitter Breakdown Voltage (I
= 10
m
A, V
= 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collecto
r
−
Base Breakdown Voltage (I
= 10
m
A)
V
V
C
Emitte
r
−
Base Breakdown Voltage (I
= 1.0
m
A)
E
Collector Cutoff Current (V
= 30 V)
I
−
−
−
−
15
5.0
nA
m
A
CB
CBO
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain (I
= 2.0 mA, V
= 5.0 V)
h
FE
200
290
450
−
C
CE
Collecto
r
−
Emitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
−
−
0.25
0.6
V
C
B
CE(sat)
Collecto
r
−
Emitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
Emitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
0.7
0.9
−
−
V
C
B
BE(sat)
Bas
e
−
Emitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
Emitter Voltage (I
= 2.0 mA, V
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Bas
e
−
Emitter Voltage
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
T
100
−
−
MHz
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
C
−
−
−
−
4.5
10
pF
pF
dB
CB
obo
Input Capacitance (V
= 0.5
V
, f =
1
.0 MHz)
C
ibo
EB
Noise Figure
NF
(I =
0.2 mA, V
= 5.0 Vdc, R
= 2.0 k
W
,f = 1.0 kHz, BW = 200 Hz)
−
−
10
C
CE
S
0.18
0.16
0.14
0.12
0.10
0.08
0.06
600
500
400
300
200
150
°
C (5.0 V)
150
°
C (1.0 V)
I /I
= 10
C
B
V
= 150
°
C
CE(sat)
25
°
C (5.0 V)
25
°
C (1.0 V)
−
55
°
C (5.0 V)
25
°
C
−
55
°
C (1.0 V)
100
0
0.04
0.02
−
55
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
2
NST847BDP6T5G
1.0
V
1.0
0.9
0.8
0.7
0.6
0.5
= 2.0 V
I /I
= 10
CE
C
B
0.9
0.8
0.7
0.6
−
55
°
C
−
55
°
C
25
°
C
25
°
C
0.5
0.4
0.3
0.4
0.3
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn
−
On Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
I
C
= 100 mA
50 mA
C
ib
30 mA
0.0001
10 mA
0
0.00001
0.001
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5.0
, EMITTER BASE VOLTAGE (V)
I ,
BASE CURRENT (A)
V
eb
b
Figure 5. Saturation Region
Figure 6. Input Capacitance
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
C
ob
0.9
0.7
0
5
10
15
20
25
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
3
NST847BDP6T5G
PACKAGE DIMENSIONS
SOT
−
963
CASE 527AD
ISSUE E
NOTES:
D
X
Y
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
6
5
4
3
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
H
E
0.95
0.05
1.05
0.15
L
L2
6X
b
6X
L2
0.08
X Y
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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◊
NST847BDP6/D
