onsemi-NST856BF3T5G

NST856BF3T5G  

PNP General Purpose  

Transistor  

The NST856BF3T5G device is a spin

−

off of our popular  

SOT

−

23/SOT

−

323/SOT

−

563/SOT

−

963 three

−

leaded device. It is  

designed for general purpose amplifier applications and is housed in  

the SOT

−

1123 surface mount package. This device is ideal for  

low

−

power surface mount applications where board space is at a  

premium.  

COLLECTOR  

3

Features  

•

h ,

 

220

−

475  

FE  

1

•

Low V  

,

≤

−

0.3 V  

CE(sat)  

BASE  

•

Reduces Board Space  

•

This is a Halide

−

Free Device  

•

This is a Pb

−

Free Device  

2

EMITTER  

NST856BF3T5G  

MAXIMUM RATINGS  

Rating  

Symbol  

Value  

−

65  

Unit  

Vdc  

3

Collecto

r

−

Emitter Voltage  

Collecto

r

−

Base Voltage  

Emitte

r

−

Base Voltage  

Collector Current

−

Continuous  

V

CEO  

V

CBO  

V

EBO  

2

1

−

80  

Vdc  

−

5.0  

−

100  

Vdc  

SOT

−

1

1

23  

CASE 524AA  

STYLE 1  

I

C

mAdc  

THERMAL CHARACTERISTICS  

Characteristic  

Symbol  

Max  

Unit  

MARKING DIAGRAM  

T

o

tal Device Dissipation, T

 

= 25

°

C  

P

D

290  

2.3  

mW  

mW/

°

C  

A

Derate above 25

°

C  

A M  

Thermal Resistance,  

R

432  

°

C/W  

q

JA  

Junction

−

to

−

Ambient  

A

M

= Device Code  

= Date Code  

T

o

tal Device Dissipation, T

 

= 25

°

C  

Derate above 25

°

C  

P

347  

2.8  

mW  

mW/

°

C  

A

D

Thermal Resistance,  

Junction

−

to

−

Ambient  

R

360  

°

C/W  

°

C/W  

°

C  

q

JA  

ORDERING INFORMATION  

Thermal Resistance,  

Junction

−

to

−

Lead 3  

R

143  

Y

JL  

†

Device  

NST856BF3T5G  

Package  

Shipping  

SOT

−

1

1

23 8000/

T

a

pe

 

& Reel  

(Pb

−

Free)  

Junction and Storage

T

e

mperature Range

 

T , T  

−

55 to  

+150  

J

stg  

Stresses exceeding Maximum Ratings may damage the device. Maximum  

Ratings are stress ratings only. Functional operation above the Recommended  

Operating Conditions is not implied. Extended exposure to stresses above the  

Recommended Operating Conditions may affect device reliability.  

†For information on tape and reel specifications,  

including part orientation and tape sizes, please  

refer to our

T

a

pe and Reel Packaging Specifications  

Brochure, BRD8011/D.  

2

2

1. 100

 

mm 1

 

oz, copper traces.  

2. 500

 

mm 1

 

oz, copper traces.  

©

Semiconductor Components Industries, LLC, 2012  

1

Publication Order Number:  

July, 2012

−

Rev. 1  

NST856BF3/D  

NST856BF3T5G  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collecto

r

−

Emitter Breakdown Voltage (I

 

=

−

10 mA)  

V

−

65  

−

80  

−

80  

−

5.0  

−

−

−

−

−

−

−

−

V

V

V

V

C

(BR)CEO  

Collecto

r

−

Emitter Breakdown Voltage (I

 

=

−

10

m

A, V

 

= 0)  

V

C

EB  

(BR)CES  

(BR)CBO  

(BR)EBO  

Collecto

r

−

Base Breakdown Voltage (I

 

=

−

10

m

A)  

V

V

C

Emitte

r

−

Base Breakdown Voltage (I

 

=

−

1.0

m

A)  

E

Collector Cutoff Current (V

 

=

−

30 V)  

I

−

−

−

−

−

15  

−

4.0  

nA  

m

A  

CB  

CBO  

Collector Cutoff Current

(V =

 

−

30

V

, T

 

=

1

50

°

C)  

CB  

A

ON CHARACTERISTICS  

DC Current Gain  

h

−

V

V

V

FE  

(I =

 

−

10

m

A, V

 

=

−

5.0 V)  

−

220  

150  

290  

−

475  

C

CE  

(I =

 

−

2.0 mA, V

 

=

−

5.0 V)  

C

CE  

Collecto

r

−

Emitter Saturation Voltage  

(I =

 

−

10 mA, I

 

=

−

0.5 mA)  

V

CE(sat)  

BE(sat)  

−

−

−

−

−

0.3  

−

0.8  

C

B

(I =

 

−

100 mA, I

 

=

−

5.0 mA)  

C

B

Bas

e

−

Emitter Saturation Voltage  

(I =

 

−

10 mA, I

 

=

−

0.5 mA)  

V

−

−

−

0.7  

−

0.9  

−

−

C

B

(I =

 

−

100 mA, I

 

=

−

5.0 mA)  

C

B

Bas

e

−

Emitter On Voltage  

(I =

 

−

2.0 mA, V

 

=

−

5.0 V)  

V

BE(on)  

−

0.6  

−

−

−

−

0.75  

−

0.82  

C

CE  

(I =

 

−

10 mA, V

 

=

−

5.0 V)  

C

CE  

SMALL

−

SIGNAL CHARACTERISTICS  

Curren

t

−

Gain

−

Bandwidth Product  

f

100  

−

−

−

−

−

−

MHz  

pF  

T

(I =

 

−

10 mA, V

 

=

−

5.0 Vdc, f = 100 MHz)  

C

CE  

Output Capacitance  

(V =

 

−

10

V

, f =

1

.0 MHz)  

CB  

C

4.5  

10  

10  

obo  

Input Capacitance  

C

−

pF  

ibo  

(V =

 

−

0.5

V

, I

 

= 0

m

A, f = 1.0 MHz)  

EB  

C

Noise Figure  

NF  

−

dB  

(I =

 

−

0.2 mA, V

 

=

−

5.0 Vdc, R

 

= 2.0 k

W

, f = 1.0 kHz, BW = 200 Hz)  

C

CE  

S

0.18  

0.16  

0.14  

0.12  

0.10  

0.08  

0.06  

800  

700  

600  

500  

400  

300  

200  

I /I

 

= 10  

150

°

C (5.0 V)  

C

B

V

= 150

°

C  

CE(sat)  

150

°

C (1.0 V)  

25

°

C (5.0 V)  

25

°

C  

25

°

C (1.0 V)  

−

55

°

C (5.0 V)  

−

55

°

C (1.0 V)  

−

55

°

C  

0.04  

0.02  

100  

0

0.0001  

0.001  

0.01  

0.1  

0.0001  

0.001  

0.01  

0.1  

I ,

 

COLLECTOR CURRENT (A)  

C

I ,

 

COLLECTOR CURRENT (A)  

C

Figure 1. Collector Emitter Saturation Voltage vs.  

Collector Current  

Figure 2. DC Current Gain vs. Collector Current  

2

NST856BF3T5G  

1.0  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

V

= 2.0 V  

I /I

 

= 10  

CE  

C

B

0.9  

0.8  

0.7  

0.6  

−

55

°

C  

−

55

°

C  

25

°

C  

25

°

C  

0.5  

0.4  

0.3  

0.4  

0.3  

150

°

C  

150

°

C  

0.0001  

0.001  

0.01  

0.1  

0.0001  

0.001  

0.01  

0.1  

I ,

 

COLLECTOR CURRENT (A)  

C

I ,

 

COLLECTOR CURRENT (A)  

C

Figure 3. Base Emitter Saturation Voltage vs.  

Collector Current  

Figure 4. Base Emitter Turn

−

On Voltage vs.  

Collector Current  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

10  

9

I

=

C

100 mA  

8

50 mA  

7

6

5

4

3

30 mA  

C

ib  

10 mA  

0

0.00001  

0.0001  

0.001  

0.01  

0

1.0  

2.0  

, EMITTER BASE VOLTAGE (V)  

eb  

3.0  

4.0  

5.0  

I ,

 

BASE CURRENT (A)  

b

V

Figure 5. Saturation Region  

Figure 6. Input Capacitance  

4.5  

4.0  

3.5  

3.0  

2.5  

2.0  

1.5  

C

ob  

1.0  

0.5  

0

5

10  

15  

20  

25  

30  

V

cb  

, COLLECTOR BASE VOLTAGE (V)  

Figure 7. Output Capacitance  

3

MECHANICAL CASE OUTLINE  

PACKAGE DIMENSIONS  

SOT

−

1123  

CASE 524AA  

ISSUE C  

DATE 29

 

NOV 2011  

SCALE 8:1  

NOTES:  

−

X

−  

D

1. DIMENSIONING

 

AND TOLERANCING PER ASME  

Y14.5M, 1994.  

−

Y

−  

2. CONTROLLING

 

DIMENSION: MILLIMETERS.  

3. MAXIMUM

 

LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE  

MINIMUM THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS

 

D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS, OR GATE BURRS.  

1

2

3

E

TOP VIEW  

MILLIMETERS  

A

DIM MIN  

MAX  

0.40  

0.28  

0.20  

0.17  

0.85  

0.65  

0.40  

1.05  

A

b

0.34  

0.15  

b1

0.10  

c

D

E

e

0.07  

0.75  

0.55  

0.35  

0.95  

H

c

E

H

E

SIDE VIEW  

L

0.185 REF  

L2

0.05 0.15  

b

3X  

L2  

GENERIC  

MARKING DIAGRAM*  

0.08 X  

Y

e

X M  

3X  

L

2X  

b1  

X

M

= Specific Device Code  

= Date Code  

BOTTOM VIEW  

*This information is generic. Please refer  

to device data sheet for actual part  

marking.  

SOLDERING FOOTPRINT*  

1.20  

Pb

−

Free indicator, “G” or microdot “

G

”,  

may or may not be present.  

0.26  

1

0.38  

2X  

0.20  

PACKAGE  

OUTLINE  

DIMENSIONS: MILLIMETERS  

*For additional information on our Pb

−

Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

STYLE 1:  

STYLE 2:  

STYLE 3:  

STYLE 4:  

STYLE 5:  

PIN 1.

 

BASE  

PIN 1.

 

ANODE  

2. N/C  

PIN 1.

 

ANODE  

2. ANODE  

PIN 1.

 

CATHODE  

2. CATHODE  

3. ANODE  

PIN 1.

 

GATE  

2. EMITTER  

3. COLLECTOR  

2. SOURCE  

3. DRAIN  

3. CATHODE  

3. CATHODE  

Electronic versions are uncontrolled except when accessed directly from the Document Repository.  

Printed versions

 

are uncontrolled

 

except when stamped

 

“CONTROLLED COPY” in red.  

DOCUMENT NUMBER:  

DESCRIPTION:  

98AON23134D  

SOT

−

1123, 3

−

LEAD, 1.0X0.6X0.37, 0.35P  

PAGE 1 OF 1  

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