onsemi-NSV12100UW3TCG
| Part # | onsemi-NSV12100UW3TCG |
Download  | onsemi-NSV12100UW3TCG |
NSS12100UW3TCG
12
V
, 1
A
, Low V
CE(sat)
PNP
T
r
ansistor
2
ON Semiconductor’s e
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
12 VOLTS, 1.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
400 m
W
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
BASE
Features
•
High Current Capability (1 A)
•
High Power Handling (Up to 740 mW)
2
EMITTER
•
Low V
(200 mV Typical @ 500 mA)
CE(s)
•
Small Size
•
Low Noise
3
WDFN3
2
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
CASE 506AU
1
MARKING DIAGRAM
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
VG M
Benefits
G
•
High Specific Current and Power Capability Reduces Required PCB Area
•
Reduced Parasitic Losses Increases Battery Life
1
VG =
Specific Device Code
M
= Date Code
G
= Pb−Free Package
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Max
−12
−12
−5.0
Unit
Vdc
Vdc
Vdc
Adc
ORDERING INFORMATION
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
†
Device
Package
Shipping
WDFN3
3000/
NSS12100UW3TCG
(Pb−Free)
T
a
pe & Reel
Collector Current − Continuous
Collector Current
− Peak
I
C
−1.0
−2.0
WDFN3
3000/
NSV12100UW3TCG
I
CM
(Pb−Free)
T
a
pe & Reel
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. 1
NSS12100UW3/D
NSS12100UW3TCG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation, T
= 25
°
C
Derate above 25
°
C
P
D
740
6.0
mW
mW/
°
C
A
Thermal Resistance, Junction−to−Ambient
R
169
°
C/W
q
JA
T
o
tal Device Dissipation, T
= 25
°
C
Derate above 25
°
C
P
D
1.1
9.0
W
mW/
°
C
A
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Lead 6
Junction and Storage
T
e
mperature Range
R
R
110
33
°
C/W
°
C/W
°
C
q
JA
q
JL
T , T
−55 to +150
J
stg
2
1. FR
−
4
@
1
00 mm
, 1 oz copper traces.
2
2. FR
−
4
@
5
00 mm
, 1 oz copper traces.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage, (I
= −10 mAdc, I
= 0)
V
−12
−12
−5.0
−
−
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collecto
r
−
B
ase Breakdown Voltage, (I
= −0.1 mAdc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage, (I
= −0.1 mAdc, I
= 0)
−
−
Vdc
E
C
Collector Cutoff Current, (V
= −12 Vdc, I
= 0)
I
CBO
−0.02
−0.03
−0.1
−0.1
m
Adc
m
Adc
CB
E
Emitter Cutoff Current, (V
ON CHARACTERISTICS
= −5.0 Vdc, I
= 0)
I
EBO
−
CES
E
h
FE
(I =
−10 mA, V
= −2.0 V)
200
100
75
−
−
−
400
250
−
C
CE
(I =
−500 mA, V
= −2.0 V)
C
CE
(I =
−1.0 A, V
= −2.0 V)
C
CE
V
V
CE(sat)
−
−
−
−
−
−0.030 −0.040
−0.080 −0.100
−0.050 −0.060
−0.200 −0.225
−0.400 −0.440
C
B
(I =
−0.1 A, I
= −0.002 A)
C
B
(I =
−0.1 A, I
= −0.010 A)
C
B
(I =
−0.5 A, I
= −0.050 A)
C
B
(I =
−1.0 A, I
= −0.100 A)
C
B
(I =
−1.0 A, I
= −0.01 A)
V
V
V
BE(sat)
−
−0.95
−1.15
C
B
(I =
−2.0 A, V
= −1.0 V)
V
BE(on)
−
−
−
−1.05
40
−1.20
50
C
CE
Input Capacitance (V
= −0.5
V
, f =
1
.0 MHz)
Cibo
pF
pF
EB
Output Capacitance (V
= −3.0
V
, f =
1
.0 MHz)
Cobo
15
20
CB
SWITCHING CHARACTERISTICS
Delay (V
= −10
V
, I
=
7
50 mA, I
= 15 mA)
t
t
−
−
−
−
−
−
−
−
20
90
ns
ns
ns
ns
CC
C
B1
d
Rise (V
= −10
V
, I
=
7
50 mA, I
= 15 mA)
t
r
CC
C
B1
Storage (V
= −10
V
, I
=
7
50 mA, I
= 15 mA)
140
100
CC
C
B1
s
Fall (V
= −10
V
, I
=
7
50 mA, I
= 15 mA)
t
CC
C
B1
f
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product, (I
= −100 mA, V
= −5 Vdc, f = 100 MHz)
f
200
−
−
−
−
MHz
dB
C
CE
T
Noise Figure, (I
= −0.2 mA, V
= −5 Vdc, R
= 2 k
W
, f = 1 kHz, BW = 200Hz)
NF
5.0
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed
Condition: Pulse Width = 300
m
sec, Duty Cycle
≤
2%.
4. Guaranteed
by design but not tested.
2
NSS12100UW3TCG
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
3.0
V
= −55
°
C
25
°
C
I /I
= 100
CE(sat)
C
B
V
= 150
°
C
I /I
= 10
CE(sat)
C
B
2.5
2.0
25
°
C
−55
°
C
150
°
C
1.5
1.0
0.5
0
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
600
500
400
300
200
150
°
C (5.0 V)
I /I
= 10
C
B
150
°
C (2.0 V)
25
°
C (5.0 V)
T =
−55
°
C
A
25
°
C (2.0 V)
0.6 25
°
C
−55
°
C (5.0 V)
0.4
150
°
C
−55
°
C (2.0 V)
100
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
V
= −1.0 V
10 mA
100 mA
300 mA
I =
500 mA
C
CE
T =
−55
°
C
A
25
°
C
150
°
C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
3
NSS12100UW3TCG
50
45
40
35
30
30
25
C
obo(pF)
20
15
10
C
ibo(pF)
25
20
5
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN3 2×2, 1.3P
CASE 506AU
ISSUE A
DATE 18 AUG 2016
1
SCALE 4:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY
APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
MILLIMETERS
INCHES
NOM
0.030
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
1.30 BSC
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
0.10
C
K
L
0.35 REF
0.40
0.014 REF
0.016
2 X
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SIDE VIEW
GENERIC
MARKING DIAGRAM*
A
0.10
0.08
C
C
XX M
8 X
G
(A3)
1
A1
SEATING
PLANE
C
XX =
Specific Device Code
M
= Date Code
D2
e
*This information is generic. Please refer
to device data sheet for actual part
marking.
e/2
2
1
Pb
−
Free indicator, “G” or microdot “
G
”,
2X
L
may or may not be present.
K
SOLDERING FOOTPRINT*
1.300
2X
0.400
E2
0.600
0.250
3
0.10
0.05
C
C
A
B
3X
b
NOTE 3
1.100
0.300
BOTTOM VIEW
0.400
0.275
1.600
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON21416D
WDFN3 2X2, 1.3P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
