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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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d
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Bipolar Power
T
r
ansistors
100
V
,
3
.0 A, Low V
CE(sat)
NPN
T
r
ansistor
NSV1C301CT
2
ON Semiconductor’s
e PowerEdge
family of low V
CE(sat)
transistors are surface mount devices featuring ultra
−
low saturation
voltage, V
, and high current gain capability. These are designed
CE(sat)
for use in lower voltage, high speed switching applications where
affordable efficient energy control is important.
NPN TRANSISTOR
3.0 AMPERES
100 VOLTS
Housed in an ultra slim LFPAK4 5×6 package, typical applications
are DC
−
DC converters and power management in portable and battery
powered products such as cellular and cordless phones, digital
cameras and MP3 players where PCB space is at a premium. The
LFPAK4 5×6 package also contains wettable flanks which are a
requirement for the automotive industry’s optical inspection methods
that are implemented in end applications such as air bag deployment,
powertrain control units, and instrument clusters.
C 5
Features
B 4
E 1,2,3
•
Complement to NSV1C300CT
•
Ultra
−
slim LF
P
A
K4 Package (5 x 6 mm) with Wettable Flanks
Schematic
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
LFPAK4 5×6
CASE 760AB
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
Rating
Symbol
Value
100
140
6.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
A
MARKING DIAGRAM
5
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
V
CBO
XXXXX
XXX
ALLYW
V
EB
Base Current
−
Continuous
Collector Current
−
Continuous
Collector Current
−
Peak
T
o
tal Power Dissipation
I
0.5
B
C
I
3.0
1
2
3
4
I
6.0
CM
(
T
o
p View)
P
D
W
XXXXXX
= Specific Device Code
= Assembly Location
= Wafer Lot
5.0
1.0
D
D
A
A
LL
Y
A
Operating and Storage Junction
T
e
mperature Range
T , T
–
5
5 to
+
1
50
°
C
J
stg
=
Y
e
ar
= Work Week
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
1. Mounted
on 1
″
sq. (645 sq. mm) Collector pad on FR
−
4 bd material.
2. Mounted
on 0.012
″
sq. (7.6 sq. mm) Collector pad on FR
−
4 bd material.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021
−
Rev. 1
NSV1C301CT/D
NSV1C301CT
ORDERING INFORMATION
Device
†
Package
Shipping
NSS1C301CTWG
LFPAK4 5×6
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
(Pb
−
Free)
NSV1C301CTWG*
LFPAK 5×6
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
Junction
−
to
−
Ambient on 1” sq. (645 sq. mm) Collector pad on FR
−
4 bd material
Junction
−
to
−
Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR
−
4 bd material
°
C/W
R
R
40
120
q
JA
JA
q
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10 mA, I
= 0)
100
140
6.0
−
−
−
−
−
−
−
−
C
B
Collecto
r
−
Base Breakdown Voltage
(I =
0.1 mA, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage
(I =
0.1 mA, I
= 0)
V
−
E
C
Collector Cutoff Current
(V =
140
V
, I
=
0
)
I
m
A
m
A
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V =
6.0 V)
−
EB
ON CHARACTERISTICS
h
FE
−
(I =
0.1 A, V
= 2.0 V)
200
200
120
80
−
−
−
−
−
−
500
−
C
CE
(I =
0.5 A, V
= 2.0 V)
C
CE
(I =
1.0 A, V
= 2.0 V)
C
CE
(I =
3.0 A, V
= 2.0 V)
C
CE
(I =
0.1 A, I
= 10 mA)
V
V
CE(sat)
−
−
−
−
0.015
0.045
0.080
0.115
0.050
0.090
0.150
0.250
C
B
(I =
1.0 A, I
= 0.100 A)
C
B
(I =
2.0 A, I
= 0.200 A)
C
B
(I =
3.0 A, I
= 0.300 A)
C
B
(I =
1.0 A, I
= 0.1 A)
V
V
V
BE(sat)
−
−
−
−
−
−
−
1.0
0.90
−
C
B
(I =
1.0 A, V
= 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
f
T
MHz
pF
pF
(I =
500 mA, V
= 10
V
, f =
1
00 MHz)
120
360
30
C
CE
Input Capacitance
Cibo
(V =
5.0
V
, f =
1
.0 MHz)
−
EB
Output Capacitance
Cobo
(V =
10
V
, f =
1
.0 MHz)
−
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed
Condition: Pulse Width = 300
m
sec, Duty Cycle
≤
2%.
2
NSV1C301CT
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
150
100
500
150
°
C
150
°
C
V
CE
= 5 V
450
400
350
300
250
200
150
100
V
CE
= 2 V
25
°
C
25
°
C
−
55
°
C
−
55
°
C
50
0
50
0
0.01
0.1
1
10
0.01
0.01
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (A)
C
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.4
0.4
0.3
0.2
IC/IB = 50
IC/IB = 10
0.3
0.2
150
°
C
150
°
C
25
°
C
25
°
C
0.1
0
0.1
0
−
55
°
C
−
55
°
C
0.01
0.1
1
10
0.1
1
I ,
COLLECTOR CURRENT (A)
I ,
COLLECTOR CURRENT (A)
C
C
Figure 3. Collector
−
Emitter Saturation
Figure 4. Collector
−
Emitter Saturation
Voltage
Voltage
1.2
1.0
0.8
0.6
0.4
1.2
1.0
−
55
°
C
IC/IB = 10
V
CE
= 2 V
−
55
°
C
25
°
C
25
°
C
0.8
0.6
0.4
150
°
C
150
°
C
0.2
0
0.2
0
0.01
0.1
1
10
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. Base
−
Emitter Saturation Voltage
Figure 6. Base
−
Emitter “On” Voltage
3
NSV1C301CT
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1,000
T =
25
°
C
A
Cib
I
C
= 3 A
I
= 2 A
C
100
10
I
= 1 A
C
Cob
I
= 0.5 A
C
I
= 0.1 A
C
0.2
0
0.1
1
10
100
1,000
10,000
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
V ,
REVERSE VOLTAGE (V)
R
Figure 7. Collector Saturation Region
Figure 8. Capacitance
1,000
10
1
100
m
S
V
CE
= 5 V
1 mS
1 S
100 mS
10 mS
100
10
0.1
Single Pulse
T
e
st at T
= 25
°
C
A
0.01
0.01
0.1
1
10
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 9. Current
−
Gain
−
Bandwidth Product
Figure 10. Safe Operating Area
10
1
D = 0.5
0.2
0.1
P
(pk)
0.05
0.02
R
R
= r(t) R
q
q
q
JC
JC(t)
= 3.8
°
C/W
JC
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
t
1
READ TIME AT t
t
1
Single Pulse
2
T
– T
= P
q
C (pk)
JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
10
Figure 11. Typical Transient Thermal Response, Junction
−
to
−
Case
4
NSV1C301CT
PACKAGE DIMENSIONS
LFPAK4 5×6
CASE 760AB
ISSUE C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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