onsemi-NSVBC846BM3T5G

General Purpose

T

r

ansistor  

NPN Silicon  

BC846BM3T5G,  

NSVBC846BM3T5G  

Features  

•

Moisture Sensitivity Level: 1  

•

ESD Rating:  

Human Body Model: >4000 V  

Machine Model: >400 V  

COLLECTOR  

3

•

NSV Prefix for Automotive and Other Applications Requiring  

Unique Site and Control Change Requirements; AEC

−

Q101  

Qualified and PPAP Capable  

1

BASE  

2

•

This is a Pb

−

Free Device  

EMITTER  

MAXIMUM RATINGS  

MARKING  

DIAGRAM  

Rating  

Symbol  

Value  

65  

Unit  

Vdc  

3

Collector

−

Emitter Voltage  

Collector

−

Base Voltage  

Emitter

−

Base Voltage  

V

CEO  

V

CBO  

V

EBO  

SOT

−

723  

CASE 631AA  

STYLE 1  

80  

Vdc  

1B M  

2

6.0  

Vdc  

1

Collector Current

−

Continuous  

THERMAL CHARACTERISTICS  

Characteristic  

I

C

100  

mAdc  

1B =

 

Specific Device Code  

= Date Code  

M

Symbol  

Max  

Unit  

T

o

tal Device Dissipation FR

−

5 Board  

P

D

265  

mW  

ORDERING INFORMATION  

T =

 

25

°

C  

A

†

Device  

BC846BM3T5G  

Package  

Shipping  

Derate above 25

°

C  

2.1  

mW/

°

C  

°

C/W  

SOT

−

723  

(Pb

−

Free)  

8000 /

T

a

pe &  

Reel  

Thermal Resistance,  

R

470  

q

JA  

NSVBC846BM3T5G SOT

−

723  

(Pb

−

Free)  

8000 /

T

a

pe &  

Reel  

T

o

tal Device Dissipation  

P

D

640  

mW  

T =

 

25

°

C  

Derate above 25

°

C  

A

†For information on tape and reel specifications,  

including part orientation and tape sizes, please  

refer to our

T

a

pe and Reel Packaging Specifications  

Brochure, BRD8011/D.  

5.1  

mW/

°

C  

°

C/W  

Thermal Resistance,  

R

195  

q

JA  

Junction and Storage  

T

e

mperature Range  

T , T  

−

55 to  

+150  

°

C  

J

stg  

Stresses exceeding those listed in the Maximum Ratings table may damage the  

device. If any of these limits are exceeded, device functionality should not be  

assumed, damage may occur and reliability may be affected.  

1. FR

−

5 = 1.0

ꢀ

0.75

ꢀ

0.062 in.  

2. Alumina

 

= 0.4

ꢀ

0.3

ꢀ

0.024 in. 99.5% alumina.  

©

Semiconductor Components Industries, LLC, 2014  

1

Publication Order Number:  

July, 2021

−

Rev. 4  

BC846BM3/D  

BC846BM3T5G, NSVBC846BM3T5G  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collecto

r

−

Emitter Breakdown Voltage  

(I =

 

10 mA)  

C

V

V

V

V

V

(BR)CEO  

65  

80  

80  

6.0  

−

−

−

−

−

−

−

−

Collecto

r

−

Emitter Breakdown Voltage  

V

(BR)CES  

(BR)CBO  

(BR)EBO  

(I =

 

10

m

A, V

 

= 0)  

C

EB  

Collecto

r

−

Base Breakdown Voltage  

(I =

 

10

m

A)  

C

V

V

Emitte

r

−

Base Breakdown Voltage  

(I =

 

1.0

m

A)  

E

Collector Cutoff Current

 

(V =

 

30 V)  

I

−

−

−

−

15  

5.0  

nA  

m

A  

CB  

CBO  

(V =

 

30

V

, T

 

=

1

50

°

C)  

CB  

A

Base Peak Current  

I

mA  

BM  

(t

≤

1 s)  

−

−

200  

ON CHARACTERISTICS  

DC Current Gain  

h

FE  

−

(I =

 

10

m

A, V

 

= 5.0 V)  

−

200  

150  

290  

−

450  

C

CE  

(I =

 

2.0 mA, V

 

= 5.0 V)  

C

CE  

Collecto

r

−

Emitter Saturation Voltage (I

 

= 10 mA, I

 

= 0.5 mA)  

V

−

−

−

−

0.25  

0.6  

V

V

C

B

CE(sat)  

Collecto

r

−

Emitter Saturation Voltage

(I =

 

100 mA, I

 

= 5.0 mA)  

C

B

Bas

e

−

Emitter Saturation Voltage (I

 

= 10 mA, I

 

= 0.5 mA)  

V

−

−

0.7  

0.9  

−

−

C

B

BE(sat)  

Bas

e

−

Emitter Saturation Voltage

(I =

 

100 mA, I

 

= 5.0 mA)  

C

B

Bas

e

−

Emitter Voltage (I

 

= 1.0 mA, V

 

= 5.0 V)  

V

BE(on)  

550  

580  

−

645  

660  

−

700  

700  

770  

mV  

C

CE  

Bas

e

−

Emitter Voltage

(I =

 

2.0 mA, V

 

= 5.0 V)  

C

CE  

Bas

e

−

Emitter Voltage

(I =

 

10 mA, V

 

= 5.0 V)  

C

CE  

SMALL

−

SIGNAL CHARACTERISTICS  

Curren

t

−

Gain

−

Bandwidth Product  

f

MHz  

pF  

T

(I =

 

10 mA, V

 

= 5.0 Vdc, f = 100 MHz)  

100  

−

−

−

−

−

C

CE  

Output Capacitance  

(V =

 

10

V

, f =

1

.0 MHz)  

CB  

C

obo  

4.5  

Noise Figure  

NF  

dB  

(I =

 

0.2 mA, V

 

= 5.0 Vdc, R

 

= 2.0 k

W

, f = 1.0 kHz, BW = 200 Hz)  

−

10  

C

CE  

S

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  

performance may not be indicated by the Electrical Characteristics if operated under different conditions.  

2

BC846BM3T5G, NSVBC846BM3T5G  

TYPICAL CHARACTERISTICS  

1,000  

0.4  

150

°

C  

25

°

C  

V

CE  

= 5 V  

IC/IB = 20  

0.3  

0.2  

−

55

°

C  

150

°

C  

−

55

°

C  

100  

10  

25

°

C  

0.1  

0

0.1  

1

10  

100  

1,000  

0.1  

1

10  

100  

I ,

 

COLLECTOR CURRENT (mA)  

C

I ,

 

COLLECTOR CURRENT (mA)  

C

Figure 1. DC Current Gain  

Figure 2. Collector

−

Emitter Saturation Voltage  

1.2  

1.2  

1.0  

1.0  

0.8  

0.6  

0.4  

−

55

°

C  

25

°

C  

−

55

°

C  

25

°

C  

0.8  

0.6  

0.4  

150

°

C  

150

°

C  

0.2  

0

V

= 5 V  

0.2  

0

IC/IB = 20  

CE  

0.1  

1

10  

100  

1,000  

0.1  

1

10  

100  

1,000  

I ,

 

COLLECTOR CURRENT (mA)  

C

I ,

 

COLLECTOR CURRENT (mA)  

C

Figure 3. Base

−

Emitter Saturation Voltage  

Figure 4. Base

−

Emitter “On” Voltage  

−

0.2  

2.0  

1.6  

1.2  

0.8  

T =

 

25

°

C  

A

V

CE  

= 5 V  

−

0.6  

−

1.0  

−

1.4  

−

1.8  

−

2.2  

10 mA  

20 mA

 

50 mA

 

100 mA

 

I =

 

200 mA  

C

q

, for V  

BE  

VB  

0.4  

0

−

2.6  

−

3.0  

−

55

°

C to 150

°

C  

0.1  

1

10  

100  

1,000  

0.01  

0.1  

1

10  

100  

I ,

 

COLLECTOR CURRENT (mA)  

C

I ,

 

BASE CURRENT (mA)  

B

Figure 5. Base

−

Emitter Temperature  

Figure 6. Collector Saturation Region  

Coefficient  

3

BC846BM3T5G, NSVBC846BM3T5G  

TYPICAL CHARACTERISTICS  

10  

1,000  

V

CE  

= 5 V  

Cib  

Cob  

1

100  

10  

0.1  

0.1  

1

10  

100  

1

10  

I ,

 

COLLECTOR CURRENT (mA)  

100  

V ,

 

REVERSE VOLTAGE (V)  

R

C

Figure 7. Capacitances  

Figure 8. Current

−

Gain

−

Bandwidth Product  

4

MECHANICAL CASE OUTLINE  

PACKAGE DIMENSIONS  

SOT

−

723  

CASE 631AA

−

01  

ISSUE D  

DATE 10 AUG 2009  

SCALE 4:1  

NOTES:  

−

X

−  

1. DIMENSIONING

 

AND TOLERANCING PER ASME  

Y14.5M, 1994.  

2. CONTROLLING

 

DIMENSION: MILLIMETERS.  

3. MAXIMUM

 

LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

D

A

b1  

−

Y

−  

3

E

H

E  

4. DIMENSIONS

 

D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

1

2

MILLIMETERS  

2X

b  

3X  

C

DIM MIN  

NOM  

0.50  

0.21  

0.31  

0.12  

1.20  

0.80  

MAX  

0.55  

0.27  

0.37  

0.17  

1.25  

0.85  

2X

e  

0.08 X

 

Y  

A

b

0.45  

0.15  

0.25  

0.07  

1.15  

0.75  

SIDE VIEW  

TOP VIEW  

b1  

C

L

D

1

E

0.40 BSC  

1.20  

0.29 REF  

0.20  

e

H

E  

L

1.15  

0.15  

1.25  

0.25  

L2  

GENERIC  

3X  

L2  

MARKING DIAGRAM*  

BOTTOM VIEW  

STYLE 1:  

PIN 1.

 

BASE  

STYLE 2:  

PIN 1.

 

ANODE  

2. N/C  

STYLE 3:  

STYLE 4:  

STYLE 5:  

PIN 1.

 

GATE  

2. SOURCE  

3. DRAIN  

PIN 1.

 

ANODE  

2. ANODE  

PIN 1.

 

CATHODE  

2. CATHODE  

3. ANODE  

XX M  

1

2. EMITTER  

3. COLLECTOR  

3. CATHODE  

3. CATHODE  

XX  

M

= Specific Device Code  

= Date Code  

RECOMMENDED  

SOLDERING FOOTPRINT*  

*This information is generic. Please refer  

to device data sheet for actual part  

marking. Pb

−

Free indicator, “G”, may  

or not be present.  

2X  

0.40  

PACKAGE  

OUTLINE  

1.50  

3X  

0.52  

0.36  

DIMENSIONS: MILLIMETERS  

*For additional information on our Pb

−

Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

Electronic versions are uncontrolled except when accessed directly from the Document Repository.  

Printed versions

 

are uncontrolled

 

except when stamped

 

“CONTROLLED COPY” in red.  

DOCUMENT NUMBER:  

DESCRIPTION:  

98AON12989D  

SOT

−

723  

PAGE 1 OF 1  

ON Semiconductor and  

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  

rights of others.  

©

Semiconductor Components Industries, LLC, 2019  

onsemi

,  

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “

onsemi

” or its affiliates  

and/or subsidiaries in the United States and/or other countries.

onsemi

owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  

A listing of

onsemi

’s product/patent coverage may be accessed at

.

onsemi

reserves the right to make changes at any time to any  

products or information herein, without notice. The information herein is provided “as

−

is” and

onsemi

makes no warranty, representation or guarantee regarding the accuracy of the  

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does

onsemi

assume any liability arising out of the application or use  

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  

and applications using

onsemi

products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  

provided by

onsemi

. “Typical” parameters which may be provided in

onsemi

data sheets and/or specifications can and do vary in different applications and actual performance may  

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.

onsemi

does not convey any license  

under any of its intellectual property rights nor the rights of others.

onsemi

products are not designed, intended, or authorized for use as a critical component in life support systems  

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  

Buyer purchase or use

onsemi

products for any such unintended or unauthorized application, Buyer shall indemnify and hold

onsemi

and its officers, employees, subsidiaries, affiliates,  

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  

associated with such unintended or unauthorized use, even if such claim alleges that

onsemi

was negligent regarding the design or manufacture of the part.

onsemi

is an Equal  

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PUBLICATION ORDERING INFORMATION  

LITERATURE FULFILLMEN

T

:  

Email Requests to:

TECHNICAL SUPPORT  

North American Technical Support:  

Voice Mail: 1 800

−

282

−

9855

T

o

ll Free USA/Canada  

Phone: 011 421 33 790 2910  

Europe, Middle East and Africa Technical Support:  

Phone: 00421 33 790 2910  

For additional information, please contact your local Sales Representative  

onsemi Website:

◊