onsemi-NSVBC857BTT1G
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BC857BTT1G
General Purpose
T
r
ansistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 which is
designed for low power surface mount applications.
Features
COLLECTOR
3
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
This is a Pb−Free Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
−45
Unit
V
V
CEO
V
CBO
V
EBO
3
−50
V
CASE 463
SOT−416
STYLE 1
−5.0
−100
−200
V
2
Collector Current − Continuous
Collector Current − Peak
I
I
mAdc
mAdc
C
1
C
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation,
P
D
200
mW
3F
G
T =
25
°
C
Derated above 25
°
C
A
G
1.6
mW/
°
C
°
C/W
Thermal Resistance,
R
600
q
JA
3F = Device Code
M =
Date Code
T
o
tal Device Dissipation,
P
D
300
mW
G
= Pb−Free Package
T =
25
°
C
A
(Note: Microdot may be in either location)
Derated above 25
°
C
2.4
mW/
°
C
°
C/W
*Date Code orientation may vary
depending upon manufacturing location.
Thermal Resistance,
R
400
q
JA
Junction and Storage
T
e
mperature Range
T , T
−55 to
+150
°
C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4
@ min pad.
2. FR−4
@ 1.0
×
1.0 in pad.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 4
BC857BTT1/D
BC857BTT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
(I =
−10 mA)
C
V
V
V
V
V
(BR)CEO
−45
−50
−50
−5.0
−
−
−
−
−
−
−
−
Collecto
r
−
E
mitter Breakdown Voltage
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
−10
m
A, V
= 0)
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
−10
m
A)
C
V
V
Emitte
r
−
B
ase Breakdown Voltage
(I =
−1.0
m
A)
E
Collector Cutoff Current (V
= −30 V)
I
−
−
−
−
−15
−4.0
nA
m
A
CB
CBO
Collector Cutoff Current
(V =
−30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
V
V
V
FE
(I =
−10
m
A, V
= −5.0 V)
−
220
150
290
−
475
C
CE
(I =
−2.0 mA, V
= −5.0 V)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
CE(sat)
BE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
−
−
−0.7
−0.9
−
−
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−2.0 mA, V
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I =
−10 mA, V
= −5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
−
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
−10
V
, f =
1
.0 MHz)
CB
C
4.5
10
ob
Noise Figure
NF
−
dB
(I =
−0.2 mA, V
= −5.0 Vdc, R
= 2.0 k
W
,
C
CE
S
f = 1.0 kHz, BW = 200 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
BC857BTT1G
TYPICAL CHARACTERISTICS
2.0
1.5
-1.0
T =
25
°
C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I
/I =
10
C B
BE(sat)
T =
25
°
C
A
1.0
0.7
0.5
V
BE(on)
@ V
= -10 V
CE
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55
°
C to +125
°
C
T =
25
°
C
A
I
=
-10 mA
I
= -50 mA
I
C
= -200 mA
= -100 mA
C
C
I
C
I
= -20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
3
BC857BTT1G
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 7. Thermal Response
The safe operating area curves indicate I
−V limits
C
CE
-200
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
1 s
3 ms
-100
-50
T =
25
°
C
T =
25
°
C
A
J
T is
variable depending upon conditions. Pulse curves are
= 150
°
C; T
or
J(pk)
C
A
valid for duty cycles to 10% provided T
≤
150
°
C. T
J(pk)
J(pk)
BC558
BC557
BC556
or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
-10
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 8. Active Region Safe Operating Area
ORDERING INFORMATION
Device
†
Package
Shipping
BC857BTT1G
SOT−416
(PB−Free)
3,000 /
T
a
pe & Reel
NSVBC857BTT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
75/SOT
−
416
CASE 463
−
01
ISSUE G
3
2
1
DATE 07 AUG 2015
SCALE 4:1
NOTES:
−
E
−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN
NOM MAX
0.70
A1
0.00
INCHES
NOM MAX
MIN
3
e
−
D
−
A
0.80
0.05
0.90 0.027
0.031 0.035
0.10 0.000
0.002 0.004
0.30 0.006
0.008 0.012
0.25 0.004
0.006 0.010
1.65 0.061
0.063 0.065
0.90 0.027
0.031 0.035
0.04 BSC
1
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
b
3 PL
0.20 (0.008)
M
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004
0.006 0.008
1.70 0.060
0.063 0.067
H
1.60
E
C
A
GENERIC
MARKING DIAGRAM*
L
A1
XX M
G
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
PIN 1.
ANODE
2. N/C
PIN 1.
ANODE
2. ANODE
2. EMITTER
3. COLLECTOR
1
3. CATHODE
3. CATHODE
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. SOURCE
3. DRAIN
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC
−
75/SOT
−
416
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
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onsemi
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−
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PUBLICATION ORDERING INFORMATION
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T
:
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−
282
−
9855
T
o
ll Free USA/Canada
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