onsemi-NSVBT2222ADW1T1G
| Part # | onsemi-NSVBT2222ADW1T1G |
Download  | onsemi-NSVBT2222ADW1T1G |
MBT2222ADW1,
NSVBT2222ADW1
General Purpose
T
r
ansistor
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
(3)
(2)
(1)
Q
Q
1
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Symbol
Value
40
Unit
Vdc
V
CEO
CBO
V
75
Vdc
1
V
EBO
6.0
Vdc
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
Collector Current
−
Continuous
Electrostatic Discharge
I
C
600
mAdc
STYLE 1
ESD
HBM Class 2
MM Class B
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
6
T =
25
°
C
A
P
150
mW
°
C/W
°
C
D
1P M
G
G
Thermal Resistance,
Junction
−
to
−
Ambient
R
q
833
JA
1
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
1P
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommende
d
O
perating Conditions may affect device reliability.
1. Device
mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MBT2222ADW1T1G
SOT
−
363
3000 /
(Pb
−
Free)
T
a
pe
& Reel
NSVBT2222ADW1T1G SOT
−
363 3000
/
(Pb
−
Free)
T
a
pe
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
Septembe
r
,
2
013
−
Rev. 5
MBT2222ADW1T1/D
MBT2222ADW1, NSVBT2222ADW1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Breakdown Voltage
Collector
−
Base Breakdown Voltage
Emitter
−
Base Breakdown Voltage,
Collector Cutoff Current
(I =
10 mAdc, I
= 0)
V
40
75
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I =
10
m
Adc, I
= 0)
V
V
C
E
(I =
10
m
Adc, I
= 0)
−
Vdc
E
C
(V =
60 Vdc, V
= 3.0 Vdc)
I
10
nAdc
m
Adc
CE
EB(off)
CEX
Collector Cutoff Current
I
CBO
(V =
60 Vdc, I
= 0)
−
−
0.01
10
CB
E
(V =
60 Vdc, I
= 0, T
= 125
°
C)
CB
E
A
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
DC Current Gain
(V =
3.0 Vdc, I
= 0)
I
−
−
100
20
nAdc
nAdc
EB
C
EBO
(V =
60 Vdc, V
= 3.0 Vdc)
I
BL
CE
EB(off)
h
−
FE
(I =
0.1 mAdc, V
= 10 Vdc)
35
50
75
35
100
50
40
−
−
−
−
300
−
−
C
C
C
CE
(I =
1.0 mAdc, V
= 10 Vdc)
CE
(I =
10 mAdc, V
= 10 Vdc)
CE
(I =
10 mAdc, V
= 10 Vdc, T
=
−
55
°
C)
C
CE
A
C
C
C
CE
CE
CE
V
Vdc
Vdc
CE(sat)
(I =
150 mAdc, I
= 15 mAdc)
−
−
0.3
1.0
C
B
(I =
500 mAdc, I
= 50 mAdc)
C
B
V
BE(sat)
(I =
150 mAdc, I
= 15 mAdc)
0.6
−
1.2
2.0
C
B
(I =
500 mAdc, I
= 50 mAdc)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
f
T
300
−
MHz
(I =
20 mAdc, V
= 20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
Input Capacitance
Input Impedance
(V =
10 Vdc, I
= 0, f = 1.0 MHz)
C
obo
−
−
8.0
25
pF
pF
k
W
CB
E
(V =
0.5 Vdc, I
= 0, f = 1.0 MHz)
C
ibo
EB
C
h
ie
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
2.0
0.25
8.0
1.25
C
C
CE
(I =
10 mAdc, V
= 10 Vdc, f = 1.0 kHz)
CE
−
4
Voltage Feedback Ratio
Small
−
Signal Current Gain
Output Admittance
h
X 10
re
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
−
−
8.0
4.0
C
CE
(I =
10 mAdc, V
= 10 Vdc, f = 1.0 kHz)
C
CE
h
−
fe
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
50
75
300
375
C
CE
(I =
10 mAdc, V
= 10 Vdc, f = 1.0 kHz)
C
CE
h
oe
m
mhos
(I =
1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
5.0
25
35
200
C
CE
(I =
10 mAdc, V
= 10 Vdc, f = 1.0 kHz)
C
CE
Collector Base Time Constant
Noise Figure
(I =
20 mAdc, V
= 20 Vdc, f = 31.8 MHz)
rb, C
NF
−
−
150
4.0
ps
E
CB
c
(I =
100
m
Adc, V
= 10 Vdc, R
= 1.0 k
W
, f = 1.0 kHz)
dB
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
10
25
d
(V =
30 Vdc, V
=
−
0.5 Vdc,
CC
BE(off)
B1
ns
ns
I
= 150 mAdc, I
= 15 mAdc)
C
Rise Time
t
r
Storage Time
t
225
60
s
(V =
30 Vdc, I
= 150 mAdc,
CC
C
I
B1
= I
= 15 mAdc)
B2
Fall Time
t
f
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
3. f is
defined as the frequency at which |h
| extrapolates to unity.
T
fe
2
MBT2222ADW1, NSVBT2222ADW1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
1.0 to 100
m
s,
1.0 to 100
m
s,
200
+16 V
DUTY CYCLE
≈
2.0%
+16 V
0
DUTY CYCLE
≈
2.0%
0
1 k
< 20 ns
1N914
-14 V
1 k
W
C *
< 10 pF
S
-ꢀ2 V
C *
< 10 pF
S
< 2 ns
-ꢀ4 V
Scope rise time < 4 ns
*
T
o
tal shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn
−
On Time
Figure 2. Turn
−
Off Time
1000
700
500
T =
125
°
C
J
300
200
25
°
C
100
70
-55
°
C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
200 300
500 700
1.0
k
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T =
25
°
C
J
I =
1.0 mA
C
0.6
0.4
0.2
0
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I ,
BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
3
MBT2222ADW1, NSVBT2222ADW1
200
100
500
V
= 30 V
I /I
= 10
C B
CC
300
I /I
= 10
C B
T =
25
°
C
J
t
′
= t
– 1/8 t
f
s
s
200
I
= I
B1 B2
70
50
t @
V =
30 V
CC
r
T =
25
°
C
J
t @
V
d EB(off)
t @
V
= 2.0 V
= 0
100
70
d
EB(off)
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0
10
20 30
50 70 100
200 300
500
5.0 7.0 10
20 30
50 70
100
200 300
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Tur
n
−
On Time
Figure 6. Tur
n
−
Off Time
10
10
R =
OPTIMUM
S
f = 1.0 kHz
R =
SOURCE
S
R =
RESISTANCE
I =
1.0 mA, R
= 150
W
S
C
8.0
8.0
S
500
m
A, R
= 200
W
S
100
m
A, R
= 2.0 k
W
I =
50
m
A
C
100
m
A
500
m
A
S
50
m
A, R
= 4.0 k
W
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
1.0 mA
0.01 0.02
0.05 0.1
0.2 0.5
1.0 2.0
5.0 10
20
50 100
50 100
200
500 1.0
k 2.0
k 5.0
k 10
k 20
k 50
k 100
k
R ,
SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
CE
= 20 V
20
T =
25
°
C
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2
0.3 0.5
0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70
100
REVERSE VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Capacitances
Figure 10. Current
−
Gain Bandwidth Product
4
MBT2222ADW1, NSVBT2222ADW1
1.0
0.8
+0.5
0
T =
25
°
C
J
R
for V
CE(sat)
q
VC
V
@ I
/I =
10
C B
BE(sat)
-ꢀ0.5
1.0 V
0.6
0.4
0.2
0
-ꢀ1.0
-ꢀ1.5
V
@ V
= 10 V
CE
BE(on)
R
for V
BE
-ꢀ2.0
-ꢀ2.5
q
VB
V
@ I
/I =
10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0 5.0
10 20
50 100 200
500 1.0
k
0.1 0.2
0.5 1.0
2.0
5.0 10 20
50 100 200
500
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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