onsemi-NSVMMBT5087LT3G
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” or its affiliates and/or
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T
ypical” parameters which may be provided in
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MMBT5087L
Low Noise
T
r
ansistor
PNP Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collecto
r
−
E
mitter Voltage
V
V
V
−50
Vdc
CEO
CBO
EBO
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
−50
−3.0
−50
Vdc
Vdc
3
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
I
C
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR−5 Board,
P
D
225
1.8
mW
mW/
°
C
MARKING DIAGRAM
A
Derate above 25
°
C
Thermal Resistance, Junction−to−Ambient
R
556
°
C/W
q
JA
2Q M
G
T
o
tal Device Dissipation Alumina
P
D
G
300
2.4
mW
mW/
°
C
A
1
Thermal Resistance, Junction−to−Ambient
Junction and Storage
T
e
mperature
R
417
°
C/W
°
C
q
JA
2Q =
Device Code
M
= Date Code*
T , T
J
−55 to +150
stg
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT5087
L
T
1G,
NSVMMBT5087
L
T
1G (Pb−Free)
SOT−23
3,000 /
T
a
pe &
Reel
MMBT5087
L
T
3G,
NSVMMBT5087
L
T
3G (Pb−Free)
SOT−23 10,000
/
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6
MMBT5087
L
T
1/D
MMBT5087L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
−50
−50
−
−
Vdc
Vdc
(BR)CEO
(I =
−1.0 mAdc, I
= 0)
C
B
Collector−Base Breakdown Voltage
V
(BR)CBO
(I =
−100
m
Adc, I
= 0)
C
E
Collector Cutoff Current
I
nAdc
CBO
(V =
−10 Vdc, I
= 0)
−
−
−10
−50
CB
E
(V =
−35 Vdc, I
= 0)
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−100
m
Adc, V
= −5.0 Vdc)
250
250
250
800
−
−
C
CE
(I =
−1.0 mAdc, V
= −5.0 Vdc)
C
CE
(I =
−10 mAdc, V
= −5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
−10 mAdc, I
= −1.0 mAdc)
V
−
−0.3
0.85
Vdc
Vdc
CE(sat)
C
B
Base−Emitter Saturation Voltage
(I =
−10 mAdc, I
= −1.0 mAdc)
V
−
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
40
−
−
MHz
pF
−
T
(I =
−500
m
Adc, V
= −5.0 Vdc, f = 20 MHz)
C
CE
Output Capacitance
C
4.0
900
obo
(V =
−5.0 Vdc, I
= 0, f = 1.0 MHz)
CB
E
Small−Signal Current Gain
h
250
fe
(I =
−1.0 mAdc, V
= −5.0 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
dB
(I =
−20 mAdc, V
= −5.0 Vdc, R
= 10 k
W
, f = 1.0 kHz)
−
−
2.0
2.0
C
CE
S
(I =
−100
m
Adc, V
= −5.0 Vdc, R
= 3.0 k
W
, f = 1.0 kHz)
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V
CE
= −
ꢀ
5.0 Vdc, T
A
= 25
°
C)
10
7.0
5.0
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
R
≈
0
BANDWIDTH = 1.0 Hz
R
≈ ∞
S
S
I
C
= 1.0 mA
I
C
= 10
m
A
3.0
2.0
300
m
A
100
m
A
30
m
A
1.0
3.0
2.0
100
m
A
300
m
A
0.7
0.5
1.0 mA
0.3
0.2
30
m
A
10
m
A
1.0
0.1
10 20
50 100 200
500 1.0ꢀk 2.0ꢀk
5.0ꢀk 10ꢀk
10 20
50 100
200
500 1.0ꢀk
2.0ꢀk
5.0ꢀk 10ꢀk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
2
MMBT5087L
NOISE FIGURE CONTOURS
(V
CE
= −
ꢀ
5.0 Vdc, T
A
= 25
°
C)
1.0ꢀM
500ꢀk
1.0ꢀM
BANDWIDTH = 1.0 Hz
500ꢀk
BANDWIDTH = 1.0 Hz
200ꢀk
100ꢀk
50ꢀk
200ꢀk
100ꢀk
50ꢀk
20ꢀk
10ꢀk
20ꢀk
10ꢀk
0.5 dB
0.5 dB
5.0ꢀk
5.0ꢀk
1.0 dB
1.0 dB
2.0ꢀk
1.0ꢀk
500
2.0ꢀk
1.0ꢀk
500
2.0 dB
2.0 dB
3.0 dB
3.0 dB
5.0 dB
200
100
200
100
5.0 dB
10
20 30
50 70 100
200 300
500 700 1.0ꢀk
10
20 30
50 70 100
200 300
500 700 1.0ꢀk
I ,
COLLECTOR CURRENT (
m
A)
C
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0ꢀM
500ꢀk
10 Hz to 15.7 kHz
200ꢀk
100ꢀk
50ꢀk
Noise Figure is Defined as:
2
2 2
R
n S
1
ń
2
e
n
)
4KTR
)
I
S
1
0
ƪ
ƫ
NF
+
20 log
20ꢀk
10ꢀk
4KTR
S
0.5 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
5.0ꢀk
2.0ꢀk
I
= Noise Current of the Transistor referred to the input. (Figure 4)
n
−23
K
T
R
= Boltzman’s Constant (1.38 x 10
j/
°
K)
1.0 dB
2.0 dB
=
T
e
mperature of the Source Resistance (
°
K)
= Source Resistance (Ohms)
1.0ꢀk
500
S
3.0 dB
5.0 dB
200
100
20 30
50 70 100
200 300
500 700 1.0ꢀk
10
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 5. Wideband
3
MMBT5087L
TYPICAL STATIC CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
100
I =
400
m
A
B
T =
25
°
C
T =
25
°
C
A
A
PULSE WIDTH = 300
m
s
350
m
A
DUTY CYCLE
≤
2.0%
80
60
300
m
A
250
m
A
I
C
= 1.0 mA
10 mA
50 mA
100 mA
200
m
A
150
m
A
40
20
0
100
m
A
50
m
A
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
0
5.0
10
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
15
20
25
30
35
40
I ,
BASE CURRENT (mA)
B
V
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
1.4
1.2
1.6
0.8
0
T =
25
°
C
J
*APPLIES for I
/I
≤
h /2
C B
FE
1.0
0.8
0.6
0.4
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
*
q
for V
VC
CE(sat)
V
@ I
/I =
10
C B
BE(sat)
0.8
1.6
2.4
V
BE(on)
@ V
= 1.0 V
CE
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
q
for V
BE
0.2
0
VB
V
@ I
/I =
10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0
10 20
50 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
4
MMBT5087L
TYPICAL DYNAMIC CHARACTERISTICS
500
1000
V =
–
ꢀ
3.0 V
CC
I /I
= 10
V
CC
I /I
= 10
= 3.0 V
700
500
300
200
C B
C B
I =
I
B1 B2
T =
25
°
C
J
t
s
300
200
T =
25
°
C
J
100
70
50
100
70
50
30
20
t
r
t
f
30
20
t @
V
d
= 0.5 V
BE(off)
10
7.0
5.0
10
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
-1.0
–
ꢀ
2.0 –
ꢀ
3.0
-10
–
ꢀ
20 –
ꢀ
30
-100
–
ꢀ
50 –
ꢀ
70
–
ꢀ
5.0 –
ꢀ
7.0
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
500
10
7.0
5.0
T =
25
°
C
J
T =
25
°
C
J
V
CE
= 20 V
300
200
C
ib
5.0 V
3.0
2.0
100
70
C
ob
50
1.0
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 12. Current−Gain — Bandwidth Product
Figure 13. Capacitance
5
MMBT5087L
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 16
DUTY CYCLE, D = t
/t
0.05
1
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
(SEE AN569/D)
1
P
(pk)
0.02
0.01
0.03
0.02
t
1
Z
T
= r(t)
•
R
q
q
JA
Z
q
JA(t)
JA(t)
SINGLE PULSE
t
2
− T
= P
J(pk)
A
(pk)
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0
10 20
50
100 200
500 1.0ꢀk
2.0ꢀk 5.0ꢀk
10ꢀk 20ꢀk
100ꢀk
50ꢀk
t, TIME (ms)
Figure 14. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
CC
= 30 V
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
10
10
I
CEO
2
1
10
10
I
CBO
To find Z
, multiply the value obtained from Figure
q
JA(t)
AND
@ V
14 by the steady state value R
.
0
I
= 3.0 V
BE(off)
q
JA
CEX
Example:
-1
Dissipating 2.0 watts peak under the following conditions:
t =
1.0 ms, t
= 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
10
10
1
2
-2
-4 -2
0
0
+
2
0
+
4
0
+
6
0
+
8
0
+
1
00
+
1
20
+
1
40
+
1
60
0
T , JUNCTION TEMPERATURE (
°
C)
J
The peak rise in junction temperature is therefore
Figure 15. Typical Collector Leakage Current
D
T = r(t) x P
x R
= 0.22 x 2.0 x 200 = 88
°
C.
(pk)
q
JA
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
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