onsemi-NSVMSD601-RT1G
| Part # | onsemi-NSVMSD601-RT1G |
Download  | onsemi-NSVMSD601-RT1G |
MSD601-RT1, MSD601-ST1
Preferred Device
NPN General Purpose
Amplifier
T
r
ansistors
Surface Mount
Features
•
Pb
−
Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Collector
−
Base Voltage
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
60
Unit
Vdc
V
(BR)CBO
(BR)CEO
(BR)EBO
1
2
BASE
EMITTER
V
V
50
Vdc
7.0
Vdc
MARKING
DIAGRAM
I
C
100
200
mAdc
mAdc
I
C(P)
Yx M
G
SC
−
59
CASE 318D
Symbol
Max
200
Unit
mW
°
C
G
Power Dissipation
P
D
Junction
T
e
mperature
T
J
150
x
=
R for RT1
S for ST1
Date Code
Storage
T
e
mperature
T
stg
−
55 ~ +150
°
C
M
G
=
=
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Pb
−
Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012
−
Rev. 9
MSD601
−
RT1/D
MSD601
−
RT1, MSD601
−
ST1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C)
A
Characteristic
Symbol
Min
Max
Unit
Collector
−
Emitter Breakdown Voltage
(I =
2.0 mAdc, I
= 0)
V
50
−
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
V
V
60
7.0
−
−
−
Vdc
Vdc
m
Adc
nAdc
−
C
E
Emitter
−
Base Breakdown Voltage
(I =
10
m
Adc, I
= 0)
E
C
Collector
−
Base Cutoff Current
(V =
45 Vdc, I
= 0)
I
I
0.1
100
CBO
CB
E
Collector
−
Emitter Cutoff Current
−
CEO
(V =
10 Vdc, I
= 0)
CE
B
(V =
10 Vdc, I
= 2.0 mAdc)
CE
C
MSD601
−
RT1
h
h
210
290
90
340
460
−
FE1
MSD601
−
ST1
(V =
2.0 Vdc, I
= 100 mAdc)
CE
C
FE2
Collector
−
Emitter Saturation Voltage
(I =
100 mAdc, I
= 10 mAdc)
V
−
0.5
Vdc
CE(sat)
C
B
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, D.C.
≤
2%.
ORDERING INFORMATION
Device
†
Package
Shipping
MSD
−
601RT1
SC
−
59
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
MSD
−
601RT1G
SC
−
59
(Pb
−
Free)
MSD
−
601ST1
SC
−
59
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
MSD
−
601ST1G
SC
−
59
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
59
CASE 318D
−
04
ISSUE H
DATE 28 JUN 2012
SCALE 2:1
D
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
H
E
1
2
b
e
H
E
C
GENERIC
MARKING DIAGRAM
A
L
A1
XXX M
G
G
SOLDERING FOOTPRINT*
1
0.95
0.037
0.95
0.037
XXX
M
= Specific Device Code
= Date Code
G
= Pb
−
Free Package*
(*Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
2.4
0.094
1.0
0.039
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1.
ANODE
2. N.C.
STYLE 3:
PIN 1.
ANODE
2. ANODE
0.8
mm
inches
3. CATHODE
3. CATHODE
ǒ
Ǔ
SCALE 10:1
0.031
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. N.C.
3. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. ANODE/CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42664B
SC
−
59
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2019
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onsemi
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.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
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−
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−
9855
T
o
ll Free USA/Canada
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