onsemi-NSVT1418LT1G
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DATA SHEET
3
Bipolar
T
r
ansistor -160
V
,
-1 A, Low V
CE
(sat), PNP
Single
1
2
SOT
−
23
CASE 318
−
08
NSVT1418L
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for automotive applications. AEC
−
Q101 qualified and
PPAP capable.
ELECTRICAL CONNECTION
3
Collector
Features
1
Base
•
Large Current Capacitance
•
Low Collector to Emitter Saturation
V
o
ltage
•
High Speed Switching
2
Emitter
•
High Allowable Power Dissipation
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
Pb
−
Free, Halogen Free and RoHS Compliant
•
Ultra Small Package Facilitates Miniaturization in End Products
MARKING DIAGRAM
CMMM
Typical Applications
•
High Side Switch
•
Lighting, Infotainment
CMM =
Specific Device Code
M
= Single Digit Date Code
ABSOLUTE MAXIMUM RATINGS
at T
= 25
°
C
A
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
−
180
−
160
−
6
Unit
V
V
CBO
V
CEO
V
EBO
ORDERING INFORMATION
this data sheet.
V
V
I
C
−
1
A
Collector Current (Pulse)
Junction
T
e
mperature
I
−
2
A
CP
P
0.42
W
_
C
_
C
C
Tj
T
s
tg
150
Storage
T
e
mperature Range
−
55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface
mounted on ceramic substrate. (250 mm
x 0.8 mm)
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2022
−
Rev. 1
NSVT1418L/D
NSVT1418L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Value
Typ
Min
Max
−
0.1
−
0.1
400
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Unit
μ
A
I
V
V
V
=
−
120
V
, I
= 0 A
CBO
CB
EB
CE
E
I
=
−
4
V
, I
= 0 A
μ
A
EBO
C
h
FE1
=
−
5
V
,
=
−
100 mA
100
90
I
C
h
FE2
V
C
=
−
5
V
,
=
−
10 mA
CE
I
Gain
−
Bandwidth Product
f
V
C
=
−
10
V
,
120
11
MHz
pF
V
T
CE
I
=
−
50 mA
Output Capacitance
Cob
V
CB
=
−
10
V
,
f = 1 MHz
Collector to Emitter Saturation Voltage
V
V
(sat)1
I
C
=
−
250 mA,
−
0.1
−
0.08
−
0.8
−
0.5
−
0.13
−
1.2
CE
I =
−
25 mA
B
(sat)2
(sat)
I
C
=
−
250 mA,
V
CE
I =
−
50 mA
B
Base to Emitter Saturation Voltage
V
I
C
=
−
250 mA,
V
BE
I =
−
25 mA
B
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V
V
V
I
I
=
−
10
m
A, I
= 0 A
−
180
−
160
−
6
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
E
=
−
1 mA, R
=
∞
C
BE
I =
−
10
m
A,
E
C
I
= 0 A
Turn
−
On Time
Storage Time
Fall Time
t
90
1000
70
ns
ns
ns
on
t
stg
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
I
I
B1
B2
PW=20
m
s
DC
≤
1%
OUTPUT
INPUT
R
B
V
R
R
L
+
+
50
W
100
m
F 470
m
F
V
BE
= 5 V
V
CC
=
−
100 V
I
C
= 20I
=
−
20I =
−
300 mA
B1 B2
Figure 1. Switching Time Test Circuit
2
NSVT1418L
TYPICAL CHARACTERISTICS
−
800
−
200 mA
−
120 mA
−
80 mA
−
60 mA
−
700
−
600
−
500
−
400
−
300
−
200
−
40 mA
−
20 mA
−
160 mA
T =
25
°
C
A
−
100
IB = 0 mA
0
0
−
200
−
400
−
600
−
800
−
1000
V
CE
, COLLECTOR
−
TO
−
EMITTER VOLTAGE (mV)
Figure 2. I
C
vs. V
CE
−
1.2
−
1.0
−
0.8
−
0.6
−
0.4
1000
V
=
−
5 V
CE
V
=
−
5 V
CE
T =
150
°
C
25
°
C
−
55
°
C
A
T =
−
55
°
C
A
100
25
°
C
10
1
150
°
C
−
0.2
0
−
1
−
10
−
100
−
1000
−
2000
−
1
−
10
−
100
−
1000
−
2000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. V
BE
vs. I
C
Figure 4. h
FE
vs. I
C
−
10
−
100
−
10
−
1
I /I
= 10
C B
I /I
= 5
C
B
−
1
T =
25
°
C
A
T =
25
°
C
A
−
0.1
−
0.1
150
°
C
−
55
°
C
150
°
C
−
55
°
C
−
0.01
−
0.01
−
1
−
10
−
100
−
1000
−
2000
−
1
−
10
−
100
−
1000
−
2000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. V
CE(sat)
vs. I
C
Figure 6. V
CE(sat)
vs. I
C
3
NSVT1418L
TYPICAL CHARACTERISTICS
−
10
−
1
−
1.2
I /I
= 10
T =
25
°
C
A
C
B
IC/IB = 20
−
1.0
−
0.8
−
0.6
−
0.4
T =
−
55
°
C
A
25
°
C
IC/IB = 10
150
°
C
IC/IB = 5
−
0.1
−
0.2
−
0.01
0
−
1
−
1
−
10
−
100
−
1000
−
2000
−
10
−
100
−
1000
−
2000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. V
BE(sat)
vs. I
C
100
T =
25
°
C
A
f = 1 MHz
T =
25
°
C
A
V
CE
= 5 V
100
10
10 V
1
−
1
10
−
10
−
100
−
200
5
50
500 1000
V
CB
, COLLECTOR
−
TO
−
BASE VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. C
ob
vs. V
CB
Figure 10. f
T
vs. I
C
10
1
0.5
0.4
0.3
0.2
500
m
s
0.1
1 ms
10 ms
100 ms
DC
T =
25
°
C
A
0.01
Single Pulse
0.1
0
Mounted on ceramic
board 250 mm
x 0.8 mm
Mounted on ceramic
board 250 mm
x 0.8 mm
2
2
0.001
0
50
100
150
0.01
0.1
1
10
100
1000
T ,
AMBIENT TEMPERATURE (
°
C)
A
V
CE
, COLLECTOR
−
TO
−
EMITTER VOLTAGE (V)
Figure 11. Power Derating
Figure 12. Safe Operating Area
4
NSVT1418L
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
†
NSVT1418LT1G
CMM
SOT
−
23
(Pb
−
Free / Halogen Free)
3,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specification Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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