onsemi-NSVT30010MXV6T1G
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NST30010MXV6T1G,
NSVT30010MXV6T1G
Dual Matched General
Purpose
T
r
ansistor
PNP Matched Pair
These transistors are housed in an ultra
−
small SOT563 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
SOT
−
563
CASE 463A
PLASTIC
Features
Current Gain Matching to 10%
Base
−
Emitter
V
o
ltage Matched to 2 mV
Drop
−
In Replacement for Standard Device
AEC
−
Q101 Qualified and P
P
A
P Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb
−
Free Devices*
(3)
(2)
(1)
Q
Q
1
2
(4)
(5)
(6)
MAXIMUM RATINGS
MARKING DIAGRAMS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Symbol
Value
−
30
Unit
V
V
CEO
V
CBO
V
EBO
UU M
G
−
30
V
G
−
5.0
−
100
V
1
Collector Current
−
Continuous
I
C
mAdc
UU =
Device Code
M
G
= Date Code
= Pb
−
Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
NST30010MXV6T1G
SOT
−
563
4,000 /
(Pb
−
Free)
T
a
pe
& Reel
NSVT30010MXV6T1G SOT
−
563 4,000
/
(Pb
−
Free)
T
a
pe
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011
−
Rev. 1
NST30010MXV6/D
NST30010MXV6T1G, NSVT30010MXV6T1G
THERMAL CHARACTERISTICS
One Device
Heated
Both Devices
Heated
Characteristic
Parameter
Symbol
Unit
T
o
tal Device Dissipation,
Two Devices Heated
T
o
tal Package
P
D
357
2.9
429
3.4
500 (250 ea)
4.0
661 (331 ea)
5.3
mW
mW/
C
mW
A
A
mW/
C
Thermal Resistance
One Heated Device
R
C/W
C/W
C/W
C/W
C
q
JA
350
291
250
189
Thermal Resistance
Unheated Device Heated by
Heated Device
Y
JA
149
88
−
−
Thermal Resistance
Lead Attached to Heated Device
Y
JL
JL
128
152
76
85
Thermal Resistance
Heated Device Heating Lead
Attached to Unheated Device
Y
224
222
−
−
Junction and Storage
T
e
mperature Range
T , T
J stg
−
55 to +150
1. PCB
with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
2. PCB
with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
ELECTRICAL CHARACTERISTICS
(T =
25
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage, (I
=
−
10 mA)
V
−
30
−
30
−
30
−
5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collecto
r
−
Emitter Breakdown Voltage, (I
=
−
10
m
A, V
= 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collecto
r
−
Base Breakdown Voltage, (I
=
−
10
m
A)
V
V
C
Emitte
r
−
Base Breakdown Voltage, (I
=
−
1.0
m
A)
E
Collector Cutoff Current (V
=
−
30 V)
I
−
−
−
−
−
15
−
4.0
nA
m
A
CB
CBO
Collector Cutoff Current
(V =
−
30
V
, T
=
1
50
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
FE
(I =
−
10
m
A, V
=
−
5.0 V)
270
420
0.9
−
520
1.0
−
800
−
C
CE
(I =
−
2.0 mA, V
=
−
5.0 V)
C
CE
CE
h h
FE(1)/ FE(2)
C
Collecto
r
−
Emitter Saturation Voltage
(I =
−
10 mA, I
=
−
0.5 mA)
V
V
V
CE(sat)
−
−
−
−
−
0.30
−
0.60
C
B
(I =
−
100 mA, I
=
−
5.0 mA)
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
−
10 mA, I
=
−
1.0 mA)
V
BE(sat)
−
−
−
0.75
−
0.90
−
−
C
B
(I =
−
100 mA, I
=
−
10 mA)
C
B
Bas
e
−
Emitter On Voltage
(I =
−
2.0 mA, V
=
−
5.0 V)
V
V
BE(on)
−
0.60
−
−
−
−
1.0
−
0.75
−
0.82
2.0
C
CE
(I =
−
10 mA, V
=
−
5.0 V)
C
CE
V V
BE(1)
−
BE(2)
mV
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product, (I
=
−
10 mA, V
=
−
5 Vdc, f = 100 MHz)
f
100
−
−
−
−
−
MHz
pF
C
CE
T
Output Capacitance, (V
=
−
10
V
, f =
1
.0 MHz)
C
4.5
10
CB
ob
Noise Figure, (I
=
−
0.2 mA, V
=
−
5 Vdc, R
= 2 k
W
, f = 1 kHz, BW = 200Hz)
NF
−
dB
C
CE
S
3. h
/h
BE(1)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
is used as numerator.
BE(2)
FE(1) FE(2)
FE
4. V
−
V
is the absolute difference of one transistor compared to the other transistor within the same package.
2
NST30010MXV6T1G, NSVT30010MXV6T1G
TYPICAL CHARACTERISTICS
0.25
0.20
4.0
I /I
= 10
C
B
I /I
= 100
3.5
3.0
2.5
2.0
1.5
1.0
C B
150
C
−
55
C
150
C
0.15
0.10
25
C
25
C
0.05
0
0.5
0
−
55
C
100
0.1
1.0
10
100
0.1
1.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1400
1.2
1.0
0.8
0.6
0.4
I /I
= 10
C
B
1200
1000
800
−
55
C
150
C (5.0 V)
25
C
150
C (2.0 V)
25
C (5.0 V)
150
C
600
25
C (2.0 V)
400
−
55
C (5.0 V)
0.2
0
−
55
C (2.0 V)
200
0
0.1
1.0
10
100
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
3.0
2.5
2.0
1.5
1.0
50 mA
I
C
= 100 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−
55
C
25
C
20 mA
150
C
10 mA
0.5
0
0.1
0
0.1
V
CE
=
−
5.0 V
1.0
10
100
0.01
0.1
1.0
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn
−
On Voltage vs.
Figure 6. Saturation Region @ 25
5
C
Collector Current
3
NST30010MXV6T1G, NSVT30010MXV6T1G
TYPICAL CHARACTERISTICS
14
12
7
6
5
4
C
(pF)
C
(pF)
obo
ibo
10
8
6
3
2
1
0
4
2
0
0
1
2
3
4
5
6
0
5
10
15
20
25
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SOT
−
563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX M
G
1
XX =
Specific Device Code
M
= Month Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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PUBLICATION ORDERING INFORMATION
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T
:
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−
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o
ll Free USA/Canada
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