onsemi-NSVT3904DP6T5G
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NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spin
−
off of our popular
SOT
−
23/SOT
−
323/SOT
−
563 three
−
leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT
−
963
six
−
leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low
−
power surface mount
applications where board space is at a premium.
Features
(3)
(2)
(1)
Q
•
h ,
100
−
300
FE
•
Low V
,
≤
0.4 V
CE(sat)
Q
1
2
•
Reduces Board Space and Component Count
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free, Halogen Free and are RoHS Compliant
(4)
(5)
(6)
NST3904DP6T5G
MAXIMUM RATINGS
Rating
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
Emitte
r
−
Base Voltage
Symbol
Value
40
Unit
Vdc
V
CEO
V
CBO
V
EBO
60
Vdc
6.0
Vdc
SOT
−
963
CASE 527AD
Collector Current
−
Continuous
Electrostatic Discharge
I
C
200
mAdc
HBM
MM
ESD
Class
2
B
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Symbol
Max
Unit
T
o
tal Device Dissipation T
= 25
°
C
P
D
240
1.9
mW
mW/
°
C
A
E M
1
Thermal Resistance, Junction-to-Ambient
R
520
°
C/W
q
JA
E
M
= Device Code
= Date Code
T
o
tal Device Dissipation T
= 25
°
C
P
280
2.2
mW
mW/
°
C
A
D
Thermal Resistance, Junction-to-Ambient
R
446
°
C/W
q
JA
ORDERING INFORMATION
Symbol
Max
Unit
†
Device
NST3904DP6T5G
Package
Shipping
T
o
tal Device Dissipation T
= 25
°
C
P
350
2.8
mW
A
D
mW/
°
C
SOT
−
963 8000/
T
a
pe
& Reel
(Pb
−
Free)
Thermal Resistance, Junction-to-Ambient
R
357
°
C/W
q
JA
NSVT3904DP6T5G SOT
−
963 8000/
T
a
pe
& Reel
(Pb
−
Free)
T
o
tal Device Dissipation T
= 25
°
C
P
D
420
3.4
mW
mW/
°
C
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance, Junction-to-Ambient
R
297
°
C/W
q
JA
Junction and Storage
T
e
mperature Range
T , T
J
−
55 to
+150
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
2
1. FR
−
4 @ 100 mm
, 1 oz. copper traces, still air.
2. FR
−
4 @ 500 mm
, 1 oz. copper traces, still air.
3. Dual
heated values assume total power is sum of two equally powered channels.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2017
−
Rev. 2
NST3904DP6/D
NST3904DP6T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collecto
r
−
Base Breakdown Voltage (I
= 10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
Base Breakdown Voltage (I
= 10
m
Adc, I
= 0)
−
Vdc
E
C
Collector Cutoff Current (V
= 30 Vdc, V
= 3.0 Vdc)
I
CEX
50
nAdc
CE
DC Current Gain
EB
h
FE
−
(I =
0.1 mAdc, V
= 1.0 Vdc)
40
70
100
60
30
−
−
300
−
−
C
CE
(I =
1.0 mAdc, V
= 1.0 Vdc)
C
CE
(I =
10 mAdc, V
= 1.0 Vdc)
C
CE
(I =
50 mAdc, V
= 1.0 Vdc)
C
CE
(I =
100 mAdc, V
= 1.0 Vdc)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
Bas
e
−
Emitter Saturation Voltage
(I =
10 mAdc, I
= 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I =
50 mAdc, I
= 5.0 mAdc)
C
B
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product (I
= 10 mAdc, V
= 20 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
Output Capacitance (V
= 5.0 Vdc, I
= 0, f = 1.0 MHz)
C
obo
4.0
8.0
5.0
CB
E
Input Capacitance (V
= 0.5 Vdc, I
= 0, f = 1.0 MHz)
C
−
pF
EB
C
ibo
Noise Figure (V
= 5.0 Vdc, I
= 100
m
Adc, R
= 1.0 k
W
, f = 1.0 kHz)
NF
−
dB
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
(V =
3.0 Vdc, V
=
−
0.5 Vdc)
t
−
−
−
−
35
35
CC
BE
d
ns
ns
Rise Time
(I =
10 mAdc, I
= 1.0 mAdc)
t
C
B1
r
Storage Time
(V =
3.0 Vdc, I
= 10 mAdc)
t
275
50
CC
C
s
Fall Time
(I =
I =
1.0 mAdc)
t
f
B1
B2
4. Pulse
T
e
st: Pulse Width
≤
300
m
s; Duty Cycle
≤
2.0%.
0.28
400
350
I /I
= 10
C
B
150
°
C (5.0 V)
V
= 150
°
C
CE(sat)
0.23
0.18
0.13
300 150
°
C (1.0 V)
250
25
°
C (5.0 V)
200
150
100
25
°
C (1.0 V)
−
55
°
C
25
°
C
−
55
°
C (5.0 V)
−
55
°
C (1.0 V)
0.08
0.03
50
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
2
NST3904DP6T5G
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.1
V
1.0
= 2.0 V
I /I
= 10
CE
C
B
0.9
−
55
°
C
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
150
°
C
150
°
C
0.4
0.3
0.4
0.3
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn
−
On Voltage vs.
Collector Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
8.0
7.5
I
= 100 mA
C
7.0
6.5
6.0
5.5
5.0
4.5
80 mA
C
ib
60 mA
40 mA
20 mA
4.0
3.5
0.2
0
0.0001
0.001
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5.0
, EMITTER BASE VOLTAGE (V)
I ,
BASE CURRENT (A)
V
eb
b
Figure 5. Saturation Region
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
C
ob
1.0
0.5
0
5.0
10
15
20
25
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
963
CASE 527AD
−
01
ISSUE E
DATE 09
FEB 2010
SCALE 4:1
NOTES:
D
X
Y
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
6
5
4
3
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
H
E
0.95
0.05
1.05
0.15
L
L2
GENERIC
MARKING DIAGRAM*
6X
b
6X
L2
0.08
X Y
XM
1
BOTTOM VIEW
STYLE 1:
PIN 1.
EMITTER 1
2. BASE
1
STYLE 2:
STYLE 3:
PIN 1.
CATHODE 1
2. CATHODE
1
X
M
= Specific Device Code
= Month Code
PIN 1.
EMITTER 1
2. EMITTER2
3. BASE
2
3. COLLECTOR
2
4. EMITTER
2
5. BASE
2
3. ANODE/ANODE
2
4. CATHODE
2
5. CATHODE
2
6. ANODE/ANODE
1
4. COLLECTOR
2
5. BASE
1
6. COLLECTOR
1
*This information is generic. Please refer
to device data sheet for actual part
marking.
6. COLLECTOR
1
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
Pb
−
Free indicator, “G” or microdot “
G
”,
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
may or may not be present.
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
RECOMMENDED
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. ANODE
5. CATHODE
6. CATHODE
MOUNTING FOOTPRINT
6X
0.35
6X
0.20
STYLE 7:
PIN 1.
CATHODE
2. ANODE
STYLE 8:
STYLE 9:
PIN 1.
SOURCE 1
2. GATE
1
PIN 1.
DRAIN
2. DRAIN
3. GATE
3. CATHODE
4. CATHODE
5. ANODE
3. DRAIN
2
4. SOURCE
2
5. GATE
2
PACKAGE
OUTLINE
4. SOURCE
5. DRAIN
6. DRAIN
1.20
6. CATHODE
6. DRAIN
1
STYLE 10:
PIN 1.
CATHODE 1
2. N/C
0.35
PITCH
3. CATHODE
2
4. ANODE
2
5. N/C
DIMENSIONS: MILLIMETERS
6. ANODE
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26456D
SOT
−
963, 1X1, 0.35P
PAGE 1 OF 1
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