onsemi-NSVT489AMT1G
| Part # | onsemi-NSVT489AMT1G |
Download  | onsemi-NSVT489AMT1G |
NST489AMT1G,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low V
CE(sat)
Switching
T
r
ansistor for
Load Management in
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
Portable Applications
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
TSOP−6
CASE 318G
STYLE 6
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
1, 2, 5, 6
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Max
30
Unit
V
3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
BASE
50
V
4
5.0
2.0
3.0
V
EMITTER
Collector Current − Continuous
Collector Current − Peak
I
C
A
DEVICE MARKING
I
A
CM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
N2 M
G
T
o
tal Device Dissipation
P
G
D
T
= 25
°
C
535
4.3
mW
mW/
°
C
A
Derate above 25
°
C
Thermal Resistance,
Junction−to−Ambient
R
°
C/W
q
JA
N2 =
Specific Device Code
234
M
= Date Code*
T
o
tal Device Dissipation
P
G
= Pb−Free Package
D
T
= 25
°
C
1.180
9.4
W
mW/
°
C
A
(Note: Microdot may be in either location)
Derate above 25
°
C
*Date Code orientation may vary depending upon
manufacturing location.
Thermal Resistance,
Junction−to−Ambient
R
°
C/W
q
JA
106
Thermal Resistance,
Junction−to−Lead #1
R
R
110
50
°
C/W
°
C/W
q
JL
JL
ORDERING INFORMATION
q
†
Device
Package
Shipping
T
o
tal Device Dissipation
(Single Pulse < 10 s)
P
W
Dsingle
1.75
NST489AMT1G
TSOP−6
3,000 /
Junction and Storage
T
e
mperature Range
T , T
−55 to +150
°
C
(Pb−Free)
T
a
pe & Reel
J
stg
NSVT489AMT1G
TSOP−6
(Pb−Free)
3,000 /
T
a
pe & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
2
1. FR
−
4
w
ith 1 oz and 3.9 mm
of copper area.
2
2. FR
−
4
w
ith 1 oz and 645 mm
of copper area.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2018 − Rev. 9
NST489AMT1/D
NST489AMT1G, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage (I
= 10 mA, I
= 0)
V
30
50
5.0
−
−
−
−
−
−
−
−
−
V
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector
−
B
ase Breakdown Voltage (I
= 0.1 mA, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage (I
= 0.1 mA, I
= 0)
−
V
E
C
Collector Cutoff Current (V
= 30
V
, I
=
0
)
I
CBO
0.1
0.1
0.1
m
A
m
A
m
A
CB
E
Collector−Emitter Cutoff Current (V
= 30 V)
I
−
CES
CES
EBO
Emitter Cutoff Current (V
= 4.0 V)
I
−
EB
ON CHARACTERISTICS
(I =
1.0 mA, V
= 5.0 V)
h
FE
300
300
200
−
500
−
−
900
−
C
CE
(I =
0.5 A, V
= 5.0 V)
C
CE
(I =
1.0 A, V
= 5.0 V)
C
CE
(I =
1.0 A, I
= 100 mA)
V
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
C
B
CE(sat)
(I =
0.5 A, I
= 50 mA)
C
B
(I =
0.1 A, I
= 1.0 mA)
C
B
V
−
−
−
−
1.1
1.1
−
V
V
C
B
BE(sat)
V
BE(on)
C
CE
Cutoff Frequency (I
= 100 mA, V
= 5.0
V
, f =
1
00 MHz
f
T
200
−
300
−
MHz
pF
C
CE
Output Capacitance (f = 1.0 MHz)
C
15
obo
4. Pulsed
Condition: Pulse Width
≤
300
m
sec, Duty Cycle
≤
2%.
1.0
0.9
1.0
0.9
I
C
= 2 A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
= 1 A
C
I /I
= 100
c
b
I /I
= 10
c
b
I
C
= 500 mA
0.1
0
0.1
0
I
= 100 mA
C
0.001
0.01
I (A)
0.1
0.2
0.001
0.01
0.1
1
2
I (A)
c
b
Figure 1. V
CE (sat)
versus I
b
Figure 2. V
CE (sat)
versus I
c
800
700
1.2
1.0
V
CE
= 5 V
V
CE
= 5 V
+125
°
C
600
500
400
300
200
+25
°
C
−55
°
C
+25
°
C
0.8
0.6
0.4
−55
°
C
+125
°
C
0.2
0
100
0
0.001
0.01
0.1
1
2
0.001
0.01
0.1
1
2
I (A)
c
I (A)
c
Figure 3. h
FE
versus I
c
Figure 4. V
BE(on)
versus I
c
2
NST489AMT1G, NSVT489AMT1G
1.2
1.0
10.00
3.0
I /I
= 10
c
b
1.00
0.10
0.01
0.8
0.6
0.4
I /I
= 100
c
b
1 ms
10 ms
100 ms
1 s
0.2
0
SINGLE PULSE T
= 25
°
C
amb
dc
1
0.001
0.01
0.1
2
0.10
1.00
10.00
100.00
I (A)
c
V
(V)
CE(sat)
Figure 5. V
BE(sat)
versus I
c
Figure 6. Safe Operating Area
1000
100
10
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 7. f
T
(MHZ) versus I
C
(mA) V
CE
= 5.0 V
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (sec)
Figure 8. Normalized Thermal Response
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOP
−
6
CASE 318G
−
02
ISSUE V
1
DATE 12 JUN 2012
SCALE 2:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
H
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
6
1
5
4
L2
GAUGE
PLANE
E1
E
5. PIN
ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
2
3
L
MILLIMETERS
SEATING
C
M
NOTE 5
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
NOM
1.00
MAX
1.10
0.10
0.50
0.26
3.10
3.00
1.70
1.05
0.60
PLANE
b
DETAIL Z
e
0.06
0.38
0.18
3.00
c
2.75
A
0.05
1.50
0.95
L
0.40
A1
L2
M
0.25 BSC
−
DETAIL Z
0
°
1
0
°
STYLE 1:
STYLE 2:
PIN 1.
EMITTER 2
2. BASE
1
STYLE 3:
PIN 1.
ENABLE
2. N/C
STYLE 4:
PIN 1.
N/C
2. V
in
STYLE 5:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 6:
PIN 1.
DRAIN
2. DRAIN
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GATE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
2
3. R
BOOST
4. Vz
5. V
in
6. V
out
3. NOT
USED
4. GROUND
5. ENABLE
6. LOAD
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
4. SOURCE
5. DRAIN
6. DRAIN
4. EMITTER
5. COLLECTOR
6. COLLECTOR
6. COLLECTOR
2
6. COLLECTOR
2
STYLE 7:
STYLE 8:
PIN 1.
Vbus
2. D(in)
STYLE 9:
STYLE 10:
PIN 1.
D(OUT)+
2. GND
STYLE 11:
STYLE 12:
PIN 1.
I/O
2. GROUND
3. I/O
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
PIN 1.
LOW VOLTAGE GATE
2. DRAIN
PIN 1.
SOURCE 1
2. DRAIN
2
3. D(in)+
4. D(out)+
5. D(out)
6. GND
3. SOURCE
3. D(OUT)
−
4. D(IN)
−
5. VBUS
6. D(IN)+
3. DRAIN
2
4. N/C
5. COLLECTOR
6. EMITTER
4. DRAIN
4. SOURCE
2
5. GATE
1
4. I/O
5. DRAIN
5. VCC
6. I/O
6. HIGH
VOLTAGE GATE
6. DRAIN
1/GATE 2
STYLE 13:
STYLE 14:
PIN 1.
ANODE
2. SOURCE
3. GATE
STYLE 15:
PIN 1.
ANODE
2. SOURCE
3. GATE
STYLE 16:
STYLE 17:
PIN 1.
EMITTER
2. BASE
PIN 1.
GATE 1
2. SOURCE
2
3. GATE
2
PIN 1.
ANODE/CATHODE
2. BASE
3. EMITTER
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
4. DRAIN
2
5. SOURCE
1
6. DRAIN
1
4. CATHODE/DRAIN
4. DRAIN
4. COLLECTOR
5. ANODE
5. CATHODE/DRAIN
6. CATHODE/DRAIN
5. N/C
6. CATHODE
6. CATHODE
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
XXXAYW
G
XXX M
G
G
G
1
1
6X
0.95
3.20
IC
STANDARD
XXX =
Specific Device Code
XXX =
Specific Device Code
A
Y
W
G
=Assembly Location
=
Y
e
ar
= Work Week
M
G
= Date Code
= Pb
−
Free Package
0.95
PITCH
= Pb
−
Free Package
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to device data sheet
for actual part marking. Pb
−
Free indicator, “G” or microdot “
G
”, may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14888C
TSOP
−
6
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
