onsemi-NTA4151PT1G
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NTA4151
P
,
N
TE4151P
Small Signal MOSFET
−20
V
,
−
760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
•
Low R
for Higher Efficiency and Longer Battery Life
DS(on)
•
Small Outline Package (1.6 x 1.6 mm)
•
SC−75 Standard Gullwing Package
•
ESD Protected Gate
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
0.26
W
@ −4.5 V
0.35
W
@ −2.5 V
0.49
W
@ −1.8 V
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
−20 V
−760 mA
Compliant
Applications
•
High Side Load Switch
•
DC−DC Conversion
•
Small Drive Circuits
P−Channel MOSFET
D
•
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value Units
G
V
DSS
−20
6.0
V
V
S
Gate−to−Source Voltage
V
GS
Continuous Drain Current
Steady State
I
−760
mA
D
MARKING DIAGRAM
& PIN ASSIGNMENT
P
mW
D
SC−75
SC−89
301
313
Steady State
3
Pulsed Drain Current
tp =10
m
s
I
1000
mA
DM
2
3
1
Operating Junction and Storage
T
e
mperature
T ,
−55 to
150
°
C
J
Drain
SC−75 / SOT−416
CASE 463
T
STG
Continuous Source Current (Body Diode)
I
S
−250
260
mA
STYLE 5
xx M
G
Lead
T
e
mperature for Soldering Purposes
(1/8 in from case for 10 s)
°
C
T
G
L
3
Gate−to−Source ESD Rating −
ESD
1800
V
2
1
Gate
2
1
(Human Body Model, Method 3015)
Source
SC−89
CASE 463C
THERMAL RESISTANCE RATINGS
R
°
C/W
q
JA
SC−75
SC−89
415
400
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2014 − Rev. 8
NTA4151P/D
NTA4151
P
,
N
TE4151P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
V
V
= 0
V
, I
= −250
m
A
−20
V
(BR)DSS
GS
D
I
V
= 0
V
, V
= −16 V
−1.0
−100
nA
m
A
DSS
GS
DS
DS
I
V
= 0
V
, V
=
4.5 V
$
1.0
$
10
GSS
GS
V
V
DS
= V
, I
= −250
m
A
−0.45
−1.2
0.36
0.45
1.0
V
GS(TH)
GS
D
Drain−to−Source On Resistance
R
V
= −4.5 V, I
= −350 mA
0.26
0.35
0.49
0.4
W
DS(on)
GS
GS
GS
D
V
V
= −2.5 V, I
= −300 mA
D
= −1.8 V, I
= −150 mA
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= −10 V, I
= −250 mA
S
DS
D
C
V
GS
= 0
V
, f =
1
.0 MHz,
156
28
pF
ISS
V
DS
= −5.0 V
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
18
Q
V
= −4.5
V
, V
=
−
10
V
,
2.1
nC
ns
V
G(TOT)
GS
DD
= −0.3 A
I
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Q
0.125
0.325
0.5
G(TH)
Q
GS
Q
GD
td
(ON)
V
I
= −4.5 V, V
= −10 V,
8.0
8.2
29
GS
DD
= −200 mA, R
= 10
W
D
G
Rise Time
t
r
Turn−Off Delay Time
td
(OFF)
Fall Time
t
f
20.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0
V
, I
= −250 mA
−0.72
−1.1
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
NTA4151PT1G
Marking
Package
Shipping
TN
SC−75
3000 /
T
a
pe & Reel
(Pb−Free)
NTE4151PT1G
TM
SC−89
(Pb−Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
NTA4151
P
,
N
TE4151P
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
DS
w
−10 V
T =
25
°
C
J
0.5
0.4
0.3
0.2
0.1
0
−1.5 V
= −1.75 V to −4.5 V
V
GS
−1.25 V
T =
25
°
C
J
T =
125
°
C
J
−1.0 V
2.5
T =
−55
°
C
J
0
0.4
0.8
1.2
1.6
2.0
0
0.5
1.0
1.5
2.0
3.0
−V ,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V ,
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= −2.5
V
V
GS
= −4.5 V
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
T =
−55
°
C
J
T =
−55
°
C
J
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−I DRAIN
CURRENT (AMPS)
D,
−I DRAIN
CURRENT (AMPS)
D,
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
250
I
D
= − 0.35 A
T =
25
°
C
J
V
GS
= −4.5
V
1.4
1.2
1.0
0.8
0.6
200
150
100
50
C
ISS
C
OSS
C
RSS
0
−50
−25
0
25
50
75
100
125
150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (
°
C)
J
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
3
NTA4151
P
,
N
TE4151P
TYPICAL ELECTRICAL CHARACTERISTICS
0.7
5
4
3
2
Q
V
GS
= 0 V
T
0.6
0.5
0.4
0.3
0.2
0.1
Q
Q
GD
GS
T =
125
°
C
J
V
= −10 V
= −0.3 A
DS
1
0
I
D
T =
25
°
C
J
T =
25
°
C
A
0
0
0.2
0.4
0.6
0.8
1.0
2.0
2.4
0
0.4
0.8
1.2
1.6
Q ,
TOTAL GATE CHARGE (nC)
G
−V ,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 9. Normalized Thermal Response
4
NTA4151
P
,
N
TE4151P
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN
NOM MAX
0.70
A1
0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027
0.031 0.035
0.10 0.000
0.002 0.004
0.30 0.006
0.008 0.012
0.25 0.004
0.006 0.010
1.65 0.059
0.063 0.067
0.90 0.027
0.031 0.035
0.04 BSC
1
b
3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004
0.006 0.008
1.70 0.061
0.063 0.065
H
E
C
STYLE 5:
PIN 1.
GATE
2. SOURCE
3. DRAIN
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
5
NTA4151
P
,
N
TE4151P
PACKAGE DIMENSIONS
SC−89, 3−LEAD
CASE 463C−03
ISSUE C
A
−X−
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
3
S
B
−Y−
4. 463C−01
OBSOLETE, NEW STANDARD 463C−02.
1
2
MILLIMETERS
DIM MIN
NOM MAX
INCHES
MIN NOM MAX
K
A
B
C
D
G
H
J
K
L
M
N
S
1.50
0.75
0.60
0.23
1.60
0.85
0.70
1.70 0.059 0.063 0.067
0.95 0.030 0.034 0.040
0.80 0.024 0.028 0.031
0.33 0.009
0.011 0.013
0.020 BSC
G
2 PL
3 PL
D
0.28
0.50 BSC
0.53 REF
0.15
0.40
1.10 REF
−−−
M
0.08 (0.003)
X Y
0.021 REF
0.10
0.30
0.20 0.004 0.006 0.008
0.50 0.012 0.016 0.020
0.043 REF
N
M
−−−
−−−
1.50
10
10
−−−
−−−
−−−
−−−
10
10
_
_
_
_
J
−−−
1.60
C
1.70 0.059 0.063 0.067
SEATING
PLANE
−T−
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
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copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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T
:
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o
ll Free
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.
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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For additional information, please contact your local
Sales Representative
NTA4151P/D
