onsemi-NTA4153NT1G
| Part # | onsemi-NTA4153NT1G |
Download  | onsemi-NTA4153NT1G |
NTA4153N, NTE4153N,
NVA4153N, NVE4153N
MOSFET
– Single,
N-Channel with ESD
Protection, Small Signal,
SC-75 and SC-89
20
V
,
9
15 mA
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
0.127
W
@ 4.5 V
0.170
W
@ 2.5 V
0.242
W
@ 1.8 V
0.500
W
@ 1.5 V
Features
•
Low R
Improving System Efficiency
DS(on)
20 V
915 mA
•
Low Threshold
V
o
ltage, 1.5 V Rated
•
ESD Protected Gate
•
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
3
N
−
Channel MOSFET
•
Pb
−
Free Packages are Available
Applications
•
Load/Power Switches
•
Power Supply Converter Circuits
•
Battery Management
•
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
1
2
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
3
SC
−
75 / SOT
−
416
CASE 463
Drain
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value Units
2
2
V
DSS
20
V
V
1
1
STYLE 5
XX M
G
Gate
−
to
−
Source Voltage
V
GS
6.0
G
Continuous Drain
Steady T
= 25
°
C
I
D
915
660
300
mA
SC
−
89
CASE 463C
A
1
2
State
T =
85
°
C
A
Gate Source
Power Dissipation
Steady State
P
D
mW
XX
= Device Code
= Date Code*
M
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
Pulsed Drain Current
t =10
m
s
p
I
1.3
A
DM
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
150
°
C
J
*Date Code orientation may vary depending
upon manufacturing location.
T
Continuous Source Current (Body Diode)
I
280
260
mA
S
SC
−
75, SC
−
89
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
T
L
Gate
1
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value Units
3
Drain
R
°
C/W
q
JA
SC
−
75 / SOT
−
416
SC
−
89
416
400
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
T
o
p View
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2019
−
Rev. 7
NTA4153N/D
NTA4153N, NTE4153N, NVA4153N, NVE4153N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 250
m
A
20
26
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
18.4
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
= 16 V
100
1.0
nA
DSS
GS
DS
I
V
DS
= 0
V
, V
=
4.5 V
m
A
GSS
GS
V
V
GS
= V
, I
= 250
m
A
0.45
0.76
1.1
V
GS(TH)
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
2.15
mV/
°
C
GS(TH)
J
Drain
−
to
−
Source On Resistance
R
V
= 4.5 V, I
= 600 mA
127
170
242
500
1.4
230
275
700
950
m
W
DS(on)
GS
GS
GS
D
V
V
= 2.5 V, I
= 500 mA
D
= 1.8 V, I
= 350 mA
D
V
= 1.5 V, I
= 40 mA
D
GS
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 10 V, I
= 400 mA
S
DS
D
C
110
16
pF
ISS
V
= 0
V
, f =
1
.0 MHz,
GS
Output Capacitance
C
OSS
RSS
V
= 16 V
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
12
Q
1.82
0.2
0.3
0.42
nC
ns
V
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
G(TH)
V
V
= 4.5
V
, V
= 10 V,
DS
GS
I
D
= 0.2 A
Q
GS
GD
Q
Turn
−
On Delay Time
Rise Time
t
3.7
4.4
25
d(ON)
t
r
= 4.5 V, V
= 10 V,
GS
DD
I
D
= 0.2 A, R
= 10
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
7.6
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
J
0.67
0.54
1.1
V
GS
= 0
V
,
I =
200 mA
S
T =
125
°
C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTA4153N, NTE4153N, NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
V
DS
w
10 V
2.0 V
1.0
0.8
0.6
0.4
0.2
0
V
GS
= 2.6 V to 5.0 V
1.8 V
1.6 V
T =
25
°
C
J
T =
125
°
C
J
T =
−
55
°
C
1.4 V
3.5
J
0
0.4
0.8
1.2
1.6
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
0.1
0
0.4
0.3
0.2
0.1
0
V
GS
= 2.5
V
V
GS
= 4.5 V
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
T =
−
55
°
C
J
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On
−
Resistance vs. Drain Current and
Figure 4. On
−
Resistance vs. Drain Current and
Temperature
Temperature
1.6
200
I
V
= 0.35 A
= 4.5 V
T =
25
°
C
D
J
V
= 0 V
GS
GS
1.4
1.2
1.0
0.8
0.6
160
120
80
40
0
C
ISS
C
OSS
C
RSS
−
50
−
25
0
25
50
75
100
125
150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (
°
C)
J
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 5. On
−
Resistance Variation with
Figure 6. Capacitance Variation
Temperature
3
NTA4153N, NTE4153N, NVA4153N, NVE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
5
4
3
2
Q
V
GS
= 0 V
T
0.5
0.4
0.3
0.2
0.1
Q
Q
GD
GS
T =
125
°
C
J
I
= 0.2 A
D
1
0
T =
25
°
C
A
T =
25
°
C
J
0
0
0.2
0.4
0.6
0.8
0
0.4
0.8
1.2
1.6
2.0
Q ,
TOTAL GATE CHARGE (nC)
G
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Gate Charge
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 9. Normalized Thermal Response
ORDERING INFORMATION
Device
†
Marking
TR
Package
Shipping
NTA4153NT1
SC
−
75 / SOT
−
416
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
NTA4153NT1G
TR
SC
−
75 / SOT
−
416
(Pb
−
Free)
NTE4153NT1G
NVA4153NT1G
NVE4153NT1G
TP
VR
VP
SC
−
89
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
(Pb
−
Free)
SC
−
75 / SOT
−
416
(Pb
−
Free)
SC
−
89
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
75/SOT
−
416
CASE 463
−
01
ISSUE G
3
2
1
DATE 07 AUG 2015
SCALE 4:1
NOTES:
−
E
−
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN
NOM MAX
0.70
A1
0.00
INCHES
NOM MAX
MIN
3
e
−
D
−
A
0.80
0.05
0.90 0.027
0.031 0.035
0.10 0.000
0.002 0.004
0.30 0.006
0.008 0.012
0.25 0.004
0.006 0.010
1.65 0.061
0.063 0.065
0.90 0.027
0.031 0.035
0.04 BSC
1
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
b
3 PL
0.20 (0.008)
M
D
0.20 (0.008)
E
H
E
L
0.10
1.50
0.20 0.004
0.006 0.008
1.70 0.060
0.063 0.067
H
1.60
E
C
A
GENERIC
MARKING DIAGRAM*
L
A1
XX M
G
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
PIN 1.
ANODE
2. N/C
PIN 1.
ANODE
2. ANODE
2. EMITTER
3. COLLECTOR
1
3. CATHODE
3. CATHODE
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. SOURCE
3. DRAIN
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC
−
75/SOT
−
416
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
89, 3 LEAD
CASE 463C
−
03
ISSUE C
DATE 31 JUL 2003
SCALE 4:1
A
−
X
−
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
−
Y
−
1
2
4. 463C
−
01 OBSOLETE, NEW STANDARD 463C
−
02.
K
MILLIMETERS
DIM MIN
NOM MAX
INCHES
MIN NOM MAX
G
2 PL
A
B
C
D
G
H
J
K
L
M
N
S
1.50
0.75
0.60
0.23
1.60
0.85
0.70
1.70 0.059 0.063 0.067
0.95 0.030 0.034 0.040
0.80 0.024 0.028 0.031
0.33 0.009
0.011 0.013
0.020 BSC
3 PL
D
M
0.08 (0.003)
X Y
0.28
0.50 BSC
0.53 REF
0.15
0.40
1.10 REF
−−−
0.021 REF
0.10
0.30
0.20 0.004 0.006 0.008
0.50 0.012 0.016 0.020
0.043 REF
−−−
−−−
10
10
−−−
−−−
−−−
−−−
10
10
_
_
N
M
−−−
1.60
_
_
J
1.50
1.70 0.059 0.063 0.067
C
SEATING
PLANE
−
T
−
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1.
ANODE
2. N/C
STYLE 3:
STYLE 4:
PIN 1.
ANODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
3
3. CATHOD-
3. CATHODE
3. ANODE
E
xx D
1
2
H
H
xx =
Specific Device Code
= Date Code
D
L
*This information is generic. Please refer to
device data sheet for actual part
marking.
G
RECOMMENDED PATTERN
OF SOLDER PADS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11472D
SC
−
89, 3 LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
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and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
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under any of its intellectual property rights nor the rights of others.
onsemi
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T
:
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o
ll Free USA/Canada
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