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. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
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d
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MOSFET
– N-Channel
Shielded Gate PowerTrench
[
150
V
,
1
0.9 m
W
, 75.4 A
NTB011N15MC
Features
•
Shielded Gate MOSFET Technology
•
Max R
= 10.9 m
W
at V
= 10
V
, I
=
4
1 A
GS D
DS(on)
•
50% Lower Qrr than other MOSFET Suppliers
•
Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
10.9 m
W
@ 10 V
75.4 A
•
100% UIL Tested
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
D
Typical Applications
•
Synchronous Rectification for
A
T
X / Server / Telecom PSU
•
Motor Drives and Uninterruptible Power Supplies
•
Micro Solar Inverter
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
S
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
150
20
Unit
V
N
−
CHANNEL MOSFET
V
DSS
Gate
−
to
−
Source Voltage
V
GS
V
MARKING
DIAGRAM
Continuous Drain
I
D
75.4
A
Current R
q
JC
Steady
State
4
T
= 25
°
C
C
Power Dissipation
P
D
136.4
12.5
W
A
Drain
R
q
JC
4
Continuous Drain
Current R
I
D
NTB011
N15MC
AYWWZZ
1
2
2
q
JA
D PAK
TO
−
263
Steady
State
3
T =
25
°
C
A
CASE 418AJ
Power Dissipation
P
D
3.75
323
W
R
q
JA
1
2
3
Pulsed Drain Current
T
C
= 25
°
C, t
= 100
m
s
I
DM
A
Gate Drain Source
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
NTB011N15MC = Specific Device Code
+175
A
Y
= Assembly Location
=
Y
e
ar
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
294
mJ
WW
ZZ
= Work Week
= Lot Traceability
Energy (I
= 14 A
, L = 3 mH)
L
pk
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
NTB011N15MC
Package
Shipping
2
1. Surface
−
mounted on FR4 board using a 1 in
, 2 oz. Cu pad.
2
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
D PAK
800 /
T
a
pe &
Reel
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2020
−
Rev. 1
NTB011N15MC/D
NTB011N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.1
Unit
R
°
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
150
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
I
D
= 250
m
A, ref to 25
°
C
83
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0
V
,
T =
25
°
C
1.0
DSS
GSS
GS
J
m
A
V
= 120 V
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
= 0
V
, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
GS
= V
, I
= 223
m
A
2.5
4.5
V
GS(TH)
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
I =
223
m
A, ref to 25
°
C
D
−
8.5
8.7
9.3
85
mV/
°
C
GS(TH)
J
R
V
GS
= 10
V
, I
=
4
1 A
10.9
12.6
DS(on)
D
m
W
V
GS
= 8
V
, I
=
2
0 A
D
Forward Transconductance
g
FS
V
DS
= 10
V
, I
=
4
1 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2810
840
14
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0
V
, f = 1
M
Hz, V
= 75 V
pF
DS
Reverse Transfer Capacitance
Gate
−
Resistance
R
0.8
37
1.6
W
G
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
9.1
15
G(TH)
nC
Q
V
GS
= 10
V
, V
=
7
5 V; I
= 41 A
GS
GD
GP
DS
D
Q
V
6.5
5.4
95
V
Output Charge
Q
V
DD
= 75
V
, V
= 0 V
nC
OSS
GS
Turn
−
On Delay Time
Rise Time
t
19
14
28
5.1
d(ON)
t
r
V
= 10
V
, V
=
7
5
V
,
DD
GS
D
ns
I
= 41 A, R
= 4.7
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0
V
,
T =
25
°
C
J
0.92
1.2
GS
V
I
= 41 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
49
ns
RR
V
S
= 0
V
, V
=
7
5 V
DD
GS
dI /dt
= 300 A/
m
s, I
= 41 A
S
Q
210
36
nC
ns
RR
RR
t
RR
V
GS
= 0
V
, V
=
7
5 V
DD
dI /dt
= 1000 A/
m
s, I
= 41 A
S
S
Q
421
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTB011N15MC
TYPICAL CHARACTERISTICS
6
190
152
114
76
10 V
V
GS
= 5.5 V
7.0 V
8.0 V
6 V
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
5
4
3
2
6.0 V
8 V
7 V
V
GS
= 5.5 V
38
0
1
0
10 V
0
2
4
6
8
10
0
38
76
114
152
190
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
60
50
40
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
V
= 41 A
I
D
= 41 A
D
= 10 V
GS
30
20
T =
150
°
C
J
10
0
T =
25
°
C
0.8
0.6
J
−
75
−
50
−
25
0
25 50 75 100
125 150 175
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance vs.
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Junction Temperature
Voltage
190
152
114
76
200
100
V
GS
= 0 V
V
DS
= 10 V
10
1
T =
25
°
C
J
0.1
T =
175
°
C
J
38
0
0.01
T =
175
°
C
T =
−
55
°
C
T =
25
°
C
T =
−
55
°
C
J
J
J
J
0.001
2
3
4
5
6
7
8
0
0.2
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source
−
to
−
Drain Diode Forward
Voltage vs. Source Current
3
NTB011N15MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 50 V
I
D
= 41 A
C
ISS
C
OSS
1K
V
DD
= 75 V
V
DD
= 100 V
6
100
4
10
1
C
2
0
RSS
f = 1 MHz
= 0 V
V
GS
0
10
20
Q ,
GATE CHARGE (nC)
30
40
0.1
1
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
10
0
1
50
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
−
to
−
Source
Voltage
90
60
100K
10K
1K
V
V
= 10 V
= 8 V
GS
GS
30
0
100
10
R
= 1.1
°
C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T ,
CASE TEMPERATURE (
°
C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1000
10
m
s
100
10
T
= 25
°
C
J(initial)
T
= 100
°
C
J(initial)
100
m
s
T
= 150
°
C
J(initial)
10
T
= 25
°
C
C
1 ms
Single Pulse
R
R
= 1.1
°
C/W
q
JC
10 ms
10
1
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.1
0.001
0.01
0.1
1
10
100
0.1
1
t ,
TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
4
NTB011N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
P
0.01
DM
Notes:
R =
1.1
°
C/W
q
JC
Single Pulse
0.00001
0.01
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
JC C
t
q
J
DM
1
t
1
2
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
5
NTB011N15MC
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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