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T
ypical” parameters which may be provided in
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data sheets and/
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products are not designed, intended, or authorized
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d
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NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N-Channel D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
23 AMPERES, 25 VOLTS
•
ꢀPb-Free Packages are Available
R
DS(on)
= 32 m
W
(Typ)
Typical Applications
N-CHANNEL
D
•
ꢀPlanar HD3e Process for Fast Switching Performance
•
ꢀLow R
to Minimize Conduction Loss
DS(on)
•
ꢀLow C
to Minimize Driver Loss
iss
•
ꢀLow Gate Charge
•
ꢀOptimized for High Side Switching Requirements in
G
High-Efficiency DC-DC Converters
S
MAXIMUM RATINGS
(T =
25
°
C unless otherwise specified)
J
Parameter
Drain-to-Source Voltage
Symbol Value Unit
MARKING DIAGRAM
& PIN ASSIGNMENTS
V
DSS
25
20
Vdc
Vdc
A
Gate-to-Source Voltage – Continuous
Drain Current
V
GS
4 Drain
4
– Continuous @ T
= 25
°
C, Limited by Chip
I
23
6.0
60
A
D
– Continuous @ T
= 25
°
C, Limited by Package
I
D
A
– Single Pulse (t
= 10
m
s)
N
TB
2
1
I
DM
p
23N03G
AYWW
3
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
37.5
W
A
Operating and Storage
T
e
mperature Range
T , T
J
-55 to
150
°
C
2
1
Gate
3
Source
stg
D PAK
CASE 418B
STYLE 2
2
Drain
Thermal Resistance – Junction-to-Case
R
3.3
°
C/W
°
C
q
JC
L
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
260
NTB23N03 = Specific Device Code
A
= Assembly Location
=
Y
e
ar
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
ꢀ Semiconductor Components Industries, LLC, 2007
August, 2007 – Rev. 3
1
Publication Order Number:
NTB23N03R/D
NTB23N03R
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(V =
0 Vdc, I
= 250
m
Adc)
V(br)
Vdc
DSS
25
–
28
–
–
–
GS D
T
e
mperature Coefficient (Positive)
mV/
°
C
m
Adc
Zero Gate Voltage Drain Current
(V =
20 Vdc, V
= 0 Vdc)
I
DSS
–
–
–
–
1.0
10
DS
GS
(V =
20 Vdc, V
= 0 Vdc, T
= 150
°
C)
DS
GS
J
Gate-Body Leakage Current
(V 20
Vdc, V
= 0 Vdc)
I
–
–
100
nAdc
GSS
=
GS
DS
(V =
V ,
I =
250
m
Adc)
V
Vdc
GS(th)
1.0
–
1.8
–
2.0
–
DS
GS
D
Threshold
T
e
mperature Coefficient (Negative)
mV/
°
C
m
W
(V =
4.5 Vdc, I
= 6 Adc)
R
DS(on)
–
–
50.3
32.3
60
45
GS D
(V =
10 Vdc, I
= 6 Adc)
GS
D
(V =
10 Vdc, I
= 6 Adc)
g
Mhos
pF
FS
–
14
–
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
225
108
48
–
–
–
iss
Output Capacitance
C
oss
(V =
20 Vdc, V
= 0
V
, f = 1
M
Hz)
DS GS
Transfer Capacitance
C
rss
Turn-On Delay Time
Rise Time
t
–
–
–
–
–
–
–
2.0
14.9
9.9
–
–
–
–
–
–
–
ns
d(on)
t
r
(V =
10 Vdc, V
= 10 Vdc,
GS
DD
I
D
= 6 Adc, R
= 3
W
)
G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
2.0
Gate Charge
Q
T
Q
1
Q
2
3.76
1.7
nC
(V =
4.5 Vdc, I
= 6 Adc,
GS
D
V
DS
1.6
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
V
Vdc
ns
SD
GS
S
–
–
0.87
0.74
1.2
–
S
GS
J
Reverse Recovery Time
t
–
–
–
–
8.7
5.2
–
–
–
–
rr
t
a
(I =
6 Adc, V
= 0 Vdc,
S
GS
S
t
3.5
b
Reverse Recovery Stored Charge
Q
0.003
m
C
RR
1. Pulse
T
e
st: Pulse
Width
≤
300
m
s, Duty Cycle
≤
2%.
2. Switching
characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
2
NTB23N03R
50 Units / Rail
50 Units / Rail
D PAK
2
NTB23N03RG
D PAK
(Pb-Free)
2
NTB23N03RT4
800 Units /
T
a
pe & Reel
800 Units /
T
a
pe & Reel
D PAK
2
NTB23N03RT4G
D PAK
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
NTB23N03R
20
10 V
20
4.5 V
V
DS
≥
10 V
8 V
6 V
4 V
16
12
8
16
5 V
3.5 V
12
8
T =
25
°
C
J
3 V
4
0
4
0
T =
-55
°
C
J
T =
125
°
C
J
V
GS
= 2.5 V
0
2
4
6
8
10
0
1
2
3
4
5
6
V
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
DS
GS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.16
0.12
0.08
0.20
0.16
0.12
0.08
V
= 4.5 V
= 10 V
GS
GS
T =
125
°
C
J
T =
25
°
C
J
T =
125
°
C
J
T =
25
°
C
J
0.04
0
0.04
0
T =
-55
°
C
J
T =
-55
°
C
J
0
4
8
12
16
20
0
4
8
12
16
20
I ,
DRAIN CURRENT (AMPS)
D
I ,
DRAIN CURRENT (AMPS)
D
Figure 3. On-Resistance versus Drain Current
and Temperature
Figure 4. On-Resistance versus Drain Current
and Temperature
10,000
1000
1.8
1.6
1.4
1.2
1
V
GS
= 0 V
I
= 6 A
D
V
= 10 V
GS
T =
150
°
C
J
T =
125
°
C
J
100
10
0.8
0.6
-50 -25
0
25
50
75
100
125
150
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
3
NTB23N03R
400
300
200
8
6
T =
25
°
C
V
DS
= 0 V
V =
0 V
GS
J
C
iss
V
GS
Q
T
C
rss
C
C
iss
4
Q
Q
2
1
oss
100
0
2
C
I
= 6 A
rss
D
T =
25
°
C
J
0
V
GS
V
DS
10
5
0
5
10
15
20
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
4.5
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
100
10
8
V
= 10 V
DS
= 6 A
V
GS
= 0 V
I
D
V
GS
= 10 V
6
t
r
t
10
d(off)
4
T =
150
°
C
J
t
2
0
d(on)
t
f
T =
25
°
C
J
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
4
NTB23N03R
PACKAGE DIMENSIONS
D
2
PAK
CASE 418AA-01
ISSUE O
NOTES:
C
1. DIMENSIONING
AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
E
V
W
-B-
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
8.64
MAX
9.65
A
B
C
D
E
F
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.036
0.045 0.055
9.65 10.29
4.06
0.51
1.14
7.87
4.83
0.92
1.40
—
A
S
1
2
3
0.310
0.100 BSC
0.018 0.025
—
G
J
2.54 BSC
0.46
2.29
7.11
0.64
2.79
—
-T-
SEATING
PLANE
K
M
S
V
0.090
0.280
0.110
—
K
W
0.575 0.625 14.60 15.88
0.045 0.055
1.14 1.40
J
G
STYLE 2:
PIN 1.
GATE
D
3 PL
2. DRAIN
3. SOURCE
4. DRAIN
M
M
0.13 (0.005)
T
B
VARIABLE
CONFIGURATION
ZONE
U
M
M
M
F
F
F
VIEW W-W
1
VIEW W-W
2
VIEW W-W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
5
NTB23N03R
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800-282-9855
T
o
ll Free
ꢁUSA/Canada
Europe, Middle East and Africa Technical Support:
ꢁPhone: 421 33 790 2910
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ꢁPhone: 81-3-5773-3850
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ꢁ
P
.
O. Box 5163, Denver, Colorado 80217 USA
ꢁ
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: 303-675-2175 or 800-344-3860
T
o
ll Free USA/Canada
ꢁ
Fax
: 303-675-2176 or 800-344-3867
T
o
ll Free USA/Canada
ꢁ
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTB23N03R/D
