onsemi-NTBG022N120M3S
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DATA SHEET
MOSFET
– 22ꢀmohm,
1200ꢀV, M3, D
2
PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
30 m
ꢀ
@ 18 V
58 A
Drain (TAB)
NTBG022N120M3S
Features
•
Typ. R
Gate (Pin 1)
= 22 m
ꢀ
DS(on)
•
Low switching losses (Typ. EON 485
ꢁ
J at 40 A, 800 V)
•
100% Avalanche Tested
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
•
These Devices are RoHS Compliant
Typical Applications
•
Solar Inverters
N
−
CHANNEL MOSFET
•
Electric
V
e
hicle Charging Stations
•
Uninterruptible Power Supplies (UPS)
•
Energy Storage Systems
•
Switch Mode Power Supplies (SMPS)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Recommended Operation Values
of Gate
−
to
−
Source Voltage
Symbol
Value
Unit
D2PAK
−
7L
CASE 418BJ
V
DSS
1200
−
10/+22
−
3/+18
V
V
V
V
GS
V
GSop
T
< 175
°
C
= 25
°
C
C
MARKING DIAGRAM
Steady
State
T
C
Continuous Drain
I
D
58
234
41
A
W
A
BG022N
120M3S
AYWWZZ
Power Dissipation
P
I
D
R
ꢂ
JC
Steady
State
T
C
= 100
°
C
Continuous Drain
D
ꢂ
JC
BG022N120M3S = Specific Device Code
Power Dissipation
Pulsed Drain Current
P
117
159
W
A
D
R
A
Y
= Assembly Location
=
Y
e
ar
ꢂ
JC
T
C
= 25
°
C
I
DM
WW =
Work Week
ZZ
= Lot Traceability
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
A
J
stg
+175
Source Current (Body Diode)
I
S
53
T
C
= 25
°
C, V
=
−
3 V
ORDERING INFORMATION
GS
Single Pulse Drain
−
to
−
Source Avalanche
E
267
245
mJ
°
C
AS
Device
Package
Shipping
L(pk)
Maximum Lead
T
e
mperature for Soldering
(1/8
″
from case for 10 seconds)
T
L
NTBG022N120M3S
D2PAK
−
7L
800 /
T
a
pe
& Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface
mounted on a FR
−
4 board using 1 in
pad of 2 oz copper.
2. The
entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
3. Repetitive
rating, limited by max junction temperature.
4. Peak
current might be limited by transconductance
5. E
of 264 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 23.1 A,
AS
DD
J
AS
V
= 100
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2022
−
Rev. 1
NVBG022N120M3S/D
NTBG022N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ
0.64
−
Max
−
Unit
Junction
−
to
−
Case
−
Steady State
Junction
−
to
−
Ambient
−
Steady State
R
°
C/W
ꢂ
JC
R
40
ꢂ
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF
−
STATE CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A
1200
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25
°
C
−
0.3
V/
°
C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
DS
= 0
V
,
T =
25
°
C
−
−
−
−
100
1
ꢁ
A
ꢁ
A
DSS
GS
J
V
= 1200 V
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
GS
= +22/
−
10
V
, V
= 0 V
DS
GSS
V
R
V
= V
, I
= 20 mA
2.04
−
3
−
2.72
−
4.4
+18
30
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
V
GOP
Drain
−
to
−
Source On Resistance
V
= 18
V
, I
=
4
0 A, T
= 25
°
C
22
47
34
m
ꢀ
DS(on)
GS
D
J
V
= 18
V
, I
=
4
0 A, T
= 175
°
C
−
GS
D
J
Forward Transconductance
g
FS
V
= 10
V
, I
=
4
0 A
−
−
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 800 V
−
−
−
−
−
−
−
−
3200
148
14
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Threshold Gate Charge
T
o
tal Gate Charge
Q
V
=
−
3/18
V
, V
=
8
00
V
,
20
G(TH)
GS
DS
I
= 40 A
D
Q
148
35
G(TOT)
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate
−
Resistance
Q
Q
GS
GD
38
R
f = 1 MHz
1.5
ꢀ
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
t
V
=
−
3/18
V
,
−
−
−
−
−
−
−
18
24
−
−
−
−
−
−
−
ns
d(ON)
GS
V
= 800
V
,
= 40 A,
= 4.5
ꢀ
DS
Rise Time
t
r
I
D
R
G
Turn
−
Off Delay Time
t
47
d(OFF)
Fall Time
t
f
14
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
ON
485
220
705
ꢁ
J
E
OFF
E
tot
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Continuous Source
−
Drain Diode Forward
I
V
=
−
3
V
, T
=
2
5
°
C
−
−
−
−
−
53
159
−
A
V
SD
GS
C
Current
Pulsed Source
−
Drain Diode Forward
I
SDM
Forward Diode Voltage
V
V
GS
=
−
3
V
, I
=
4
0 A, T
= 25
°
C
4.5
SD
SD
J
2
NTBG022N120M3S
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified) (continued)
J
Parameter
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
S
=
−
3/18
V
, I
=
4
0 A,
−
−
−
−
−
−
23
146
5
−
−
−
−
−
−
ns
nC
ꢁ
J
A
RR
GS
SD
dI /dt
= 1000 A/
ꢁ
s, V
= 800 V
DS
Q
RR
E
REC
RRM
I
13
13
10
t
A
t
B
ns
ns
Discharge time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E
/E
result is with body diode
ON OFF
3
NTBG022N120M3S
TYPICAL CHARACTERISTICS
2.0
200
150
100
50
12 V
T
C
= 25
°
C
V
= 20 V to 15 V
GS
1.5
1.0
12 V
V
GS
= 20 V to 15 V
0.5
0
T
= 25
°
C
C
0
0
1
2
3
4
5
6
7
8
9
10
0
40
80
I ,
DRAIN CURRENT (A)
120
160
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
250
200
2.5
I
V
= 40 A
I
D
= 40 A
D
= 18 V
GS
2.0
150
100
50
1.5
1.0
0.5
0
T =
150
°
C
J
T =
25
°
C
J
0
−
55
−
30
−
5
20
45
70
95 120
145 170
5
10
15
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
500
400
300
200
100
80
E
tot
E
on
V
DS
= 10 V
60
E
off
40
T =
25
°
C
J
T =
175
°
C
J
R
= 4.5
ꢀ
= 800 V
= 18/
−
3 V
G
100
0
20
0
V
DD
V
GS
T =
−
55
°
C
J
5
10
15
20
25
30
35
40
45
3
6
9
12
15
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
4
NTBG022N120M3S
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200
700
E
tot
I
V
V
= 20 A
R
= 4.5
ꢀ
= 40 A
= 18/
−
3 V
D
G
E
tot
= 800 V
600
500
400
300
200
I
D
DD
GS
= 18/
−
3 V
V
GS
E
on
E
on
E
off
E
off
100
0
100
0
500
600
700
800
900
1000
0
2
4
6
8
10
V
DD
(V)
R ,
GATE RESISTANCE (
ꢀ
)
G
Figure 7. Switching Loss vs. Drain Voltage
Figure 8. Switching Loss vs. Gate Resistance
500
400
300
200
300
100
V
GS
=
−
3 V
E
tot
E
on
T =
25
°
C
J
I
V
R
= 20 A
D
T =
175
°
C
J
= 800 V
DD
10
1
T =
−
55
°
C
J
= 4.5
ꢀ
G
V
= 18/
−
3 V
GS
E
off
100
0
25
50
75
100
125
150
175
1
3
5
7
9
TEMPERATURE (
°
C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Diode Forward Voltage vs. Current
5
NTBG022N120M3S
TYPICAL CHARACTERISTICS
10000
18
15
12
9
I
D
= 40 A
C
iss
V
= 800 V
DD
1000
100
V
DD
= 400 V
C
oss
V
= 600 V
DD
6
C
rss
3
10
1
0
f = 1 MHz
= 0 V
V
GS
−
3
0
20
40
60
80
100
120
140 160
0.1
1
10
100
800
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 11. Gate
−
to
−
Source Voltage vs. Total
Figure 12. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
60
V
GS
= 18 V
100
40
T =
25
°
C
J
T =
150
°
C
J
10
1
20
0
R
= 0.64
°
C/W
ꢂ
JC
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
10000
1000
100
10
Single Pulse
R
= 0.64
°
C/W
ꢂ
JC
T
C
= 25
°
C
10
ꢁ
s
1000
100
100
ꢁ
s
Single Pulse
T =
Max Rated
1 ms
1
10 ms
J
R
= 0.64
°
C/W
ꢂ
JC
100 ms/DC
100
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T
C
= 25
°
C
0.1
0.1
1
10
10002000
0.00001 0.0001
0.001
0.01
0.1
1
V
DS
t, PULSE WIDTH (sec)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
6
NTBG022N120M3S
TYPICAL CHARACTERISTICS
1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
Notes:
(t) = r(t) x R
P
DM
0.01
Z
ꢂ
ꢂ
JC
JC
R
= 0.64
°
C/W
ꢂ
JC
t
Peak T
= P
x Z
(t) + T
ꢂ
JC C
1
J
DM
t
Duty Cycle, D = t
/t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 17. Junction
−
to
−
Case Transient Thermal Response
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK7 (TO
−
263
−
7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D
2
PAK7 (TO
−
263
−
7L HV)
PAGE 1 OF 1
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