onsemi-NTBG028N170M1
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DATA SHEET
Silicon Carbide (SiC)
MOSFET
28 m
W
, 1700
V
,
M
1, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1700 V
40 m
W
@ 20 V
71 A
Drain
(TAB)
NTBG028N170M1
Features
•
Typ. R
Gate
(Pin 1)
= 28 m
W
DS(on)
•
Ultra Low Gate Charge (typ. Q
= 222 nC)
G(tot)
Driver
•
Low Effective Output Capacitance (typ. C
= 200 pF)
oss
Power Source
(Pin 3, 4, 5, 6, 7)
Source
(Pin 2)
•
100% Avalanche Tested
•
RoHS Compliant
N
−
CHANNEL MOSFET
Typical Applications
•
UPS
•
DC/DC Converter
•
Boost Converter
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
D2PAK
−
7L
CASE 418BJ
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
1700
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
−
15/+25
−
5/+20
V
MARKING DIAGRAM
GS
Recommended Operation Val-
ues of Gate
−
to
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
V
C
AYWWZZ
BG028N
170M1
Continuous Drain
Steady
State
T
I
71
428
53
A
W
A
C
D
Power Dissipation
P
D
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ZZ =
Lot Traceability
Continuous Drain
Steady
State
T
C
= 100
°
C
I
D
BG028N170M1 = Specific Device Code
Power Dissipation
P
214
195
W
A
D
Pulsed Drain Current
T =
25
°
C
A
I
DM
ORDERING INFORMATION
†
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
Device
Package
Shipping
J
stg
+175
NTBG028N170M1
D2PAK
−
7L
800 ea/
Source Current (Body Diode)
I
S
99
A
T
a
pe&Reel
Single Pulse Drain
−
to
−
Source Avalanche
E
450
mJ
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
Energy (I
L(pk)
Maximum Lead
T
e
mperature for Soldering
(1/8
″
from case for 5 s)
T
300
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
mounted on a FR
−
4 board using1 in2 pad of 2 oz copper.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive
rating, limited by max junction temperature.
4. EAS
of 450 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 30 A,
J
AS
V
DD
= 120
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
March, 2022
−
Rev. 0
NTBG028N170M1/D
NTBG028N170M1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Typ
Max
Unit
R
0.35
°
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 1
m
A
1700
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
I =
1 mA, referenced to 25
°
C
D
0.44
V/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
DS
= 0
V
,
T =
25
°
C
100
1
m
A
mA
m
A
DSS
GS
J
V
= 1700 V
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
GS
= +25/
−
15
V
, V
= 0 V
1
GSS
DS
V
R
V
= V
, I
= 20 mA
1.8
3.0
4.3
+20
40
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
−
5
GOP
V
= 20
V
, I
=
6
0 A, T
= 25
°
C
28
57
27
m
W
DS(on)
GS
D
J
V
= 20
V
, I
=
6
0 A, T
= 175
°
C
D J
GS
Forward Transconductance
g
FS
V
= 20
V
, I
=
6
0 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 800 V
4160
200
15
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
=
−
5/20
V
, V
=
8
00
V
,
222
40
nC
G(TOT)
GS
DS
I
= 60 A
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate
−
Resistance
Q
G(TH)
Q
72
GS
GD
Q
53
R
f = 1 MHz
6.1
W
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
t
V
=
−
5/20
V
,
= 1200
V
,
= 60 A,
47
18
ns
d(ON)
GS
DS
V
Rise Time
t
r
I
D
R
= 2
W
G
Turn
−
Off Delay Time
t
121
13
d(OFF)
inductive load
Fall Time
t
f
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
1311
683
1994
m
J
ON
E
OFF
E
tot
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
Source Diode Forward
Current
I
V
GS
=
−
5
V
, T
=
2
5
°
C
99
A
SD
J
Pulsed Drain
−
Source Diode Forward
I
195
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
=
−
5
V
, I
=
6
0 A, T
= 25
°
C
4.3
33
V
SD
SD
J
t
V
GS
=
−
5/20
V
, I
=
6
0 A,
ns
nC
RR
SD
dI /dt
= 1000 A/
m
s
S
Q
247
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NTBG028N170M1
TYPICAL CHARACTERISTICS
250
200
150
100
4
14 V
V
GS
= 10 V
V
GS
= 20 V
16 V
3
2
18 V
16 V
18 V
14 V
20 V
1
0
50
0
10 V
0
2
4
6
8
10
12
0
8
0
50
100
I ,
DRAIN CURRENT (A)
150
200
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
160
120
80
2.5
2.0
I
= 60 A
D
I
V
= 60 A
= 20 V
D
GS
1.5
T =
150
°
C
J
1.0
0.5
40
0
T =
25
°
C
J
−
75
−
50
−
25
0
25 50 75
100 125
150 175
11
14
17
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance Variation
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
with Temperature
Voltage
120
90
300
100
V
= 20 V
T =
175
°
C
J
T =
−
55
°
C
J
DS
T =
25
°
C
J
10
60
T =
25
°
C
T =
175
°
C
J
J
1
30
0
V
=
−
5 V
T =
−
55
°
C
J
GS
0.1
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
3
NTBG028N170M1
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
1.0
3.0
T =
25
°
C
DD
T =
25
°
C
J
DD
J
V
E
TOTAL
= 1200 V
V
= 1200 V
2.5
2.0
1.5
1.0
R
= 2
W
R
= 2
W
G(EXT)
E
G(EXT)
TOTAL
V
GS
=
−
5 V/+20 V
V
GS
=
−
5 V/+20 V
L
Stray
= 30 nH
L
Stray
= 30 nH
FWD: NDSH25170A
FWD: NDSH25170A
E
ON
E
ON
E
OFF
E
OFF
0.5
0
0.5
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
I ,
DRAIN
−
TO
−
SOURCE CURRENT (A)
D
I ,
DRAIN
−
TO
−
SOURCE CURRENT (A)
D
Figure 7. SW Loss vs. ID 25
5
C
Figure 8. SW Loss vs. ID 125
5
C
3.5
T =
25
°
C, V
= 1200 V
J
DD
E
TOTAL
I
= 60 A, V
=
−
5 V/+20 V
DS
GS
3.0
2.5
2.0
L
Stray
= 30 nH
FWD: NDSH25170A
E
ON
1.5
1.0
E
OFF
0.5
0
0
2
4
6
8
10
12
R
, EXTERNAL GATE RESISTANCE (
W
)
G(EXT)
Figure 9. SW Loss vs. Rg
4
NTBG028N170M1
TYPICAL CHARACTERISTICS
20
15
10
5
10K
V
DD
= 400 V
C
iss
V
= 800 V
DD
V
DD
= 600 V
1K
C
oss
100
C
rss
10
1
0
f = 1 MHz
= 0 V
I
= 60 A
V
GS
D
−
5
0
50
100
150
200
250
1
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
100
800
175
1
Q ,
GATE CHARGE (nC)
V
g
Figure 10. Gate
−
to
−
Source Voltage vs. Total
Figure 11. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
80
70
60
50
40
30
20
100
V
GS
= 20 V
T =
25
°
C
J
10
R
= 0.35
°
C/W
10
0
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
, TIME IN AVALANCHE (mS)
T ,
CASE TEMPERATURE (
°
C)
C
AV
Figure 12. Unclamped Inductive Switching
Capability
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
100K
10K
Curve Bent to
Measured Data
Single Pulse
R
= 0.35
°
C/W
q
JC
This Area is
Limited by R
T
C
= 25
°
C
DS(on)
1
m
s
T
= 25
°
C
Single Pulse
T =
Max Rated
C
10
m
s
J
1K
100
m
s
R
= 0.35
°
C/W
q
JC
1
R
Limit
DS(on)
1 ms
10 ms/
DC
Thermal Limit
Package Limit
100
0.1
0.1
1
10
100
1000 5000
0.000001 0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
Figure 15. Single Pulse Maximum Power
Dissipation
5
NTBG028N170M1
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
0.01
1%
Notes:
(t) = r(t) x R
P
DM
Single Pulse
Z
q
q
JC
JC
R
= 0.35
°
C/W
0.001
q
JC
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
q
JC C
t
1
J
DM
t
2
1
2
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 16. Transient Thermal Impedance
6
NTBG028N170M1
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
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PUBLICATION ORDERING INFORMATION
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T
:
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